Electron emission source and method for making the same

Patent metadata

Field	Value
Publication number	US-2021193425-A1
Application number	US-202016899794-A
Country	US
Kind code	A1
Filing date	Jun 12, 2020
Priority date	Dec 24, 2019
Publication date	Jun 24, 2021
Grant date	—

Abstract

An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, and a second electrode, The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers.

First claim

What is claimed is:

1 . An electron emission source, comprising a first electrode, an insulating layer, and a second electrode successively stacked in a said order, the second electrode is a graphene layer, a thickness of the graphene layer ranges from approximately 0.1 nanometers to approximately 50 nanometers, and the graphene layer defines an electron emission end to emit electrons.

2 . The electron emission source of claim 1 , wherein the graphene layer comprises at least one graphene film, the graphene film consists of a single-layer graphene.

3 . The electron emission source of claim 1 , wherein the graphene layer consists of a single-layer graphene, and the single-layer graphene has a thickness of one single carbon atom.

4 . The electron emission source of claim 1 , wherein a material of the insulating layer is alumina, silicon nitride, silicon oxide, tantalum oxide, or boron nitride.

5 . The electron emission source of claim 4 , wherein the material of the insulating layer is boron nitride, and a thickness of the insulating layer ranges from approximately 0.3 nanometers to approximately 0.6 nanometers.

6 . The electron emission source of claim 1 , wherein the electron emission source consists of the first electrode, a boron nitride layer, and the graphene layer successively stacked in the said order.

7 . A method for making an electron emission source, comprising:
depositing an insulating layer on a surface of a first electrode, wherein the insulating layer comprises a first surface and a second surface opposite to the first surface, and the first electrode is in contact with the first surface of the insulating layer; and depositing a second electrode on the second surface of the insulating layer.

8 . The method of claim 7 , wherein the second electrode is a graphene layer, the graphene layer consists of a single-layer graphene, and the single-layer graphene has a thickness of one single carbon atom.

9 . The method of claim 8 , wherein the material of the insulating layer is boron nitride, and a thickness of the insulating layer ranges from approximately 0.3 nanometers to approximately 0.6 nanometers.

10 . A method for making an electron emission source, comprising:
depositing an insulating layer on a surface of a first electrode, wherein the insulating layer comprises a first surface and a second surface opposite to the first surface, and the first electrode is in contact with the first surface of the insulating layer; and depositing a single layer of graphene having one thickness of a single carbon atom on the surface of the semiconductor layer.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Yang Xin-He
• Liu Peng
• Fan Shou-Shan

Classifications

• H01J1/312 Primary

  having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type {(H01J1/304- H01J1/308 take precedence)} · CPC title

• H01J2201/30453

  Carbon types · CPC title

• H01J9/022

  of cold cathodes · CPC title

• H01J9/025 Primary

  of field emission cathodes · CPC title

• H01J3/021 Primary

  Electron guns using a field emission, photo emission, or secondary emission electron source · CPC title