Electron emission element and method for same

Patent metadata

Field	Value
Publication number	US-10763068-B2
Application number	US-201816613540-A
Country	US
Kind code	B2
Filing date	May 15, 2018
Priority date	May 18, 2017
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).

First claim

The invention claimed is:

1. An electron emitting device comprising a first electrode, a second electrode, and a semi-conductive layer provided between the first electrode and the second electrode, wherein
the semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer, and
the first electrode is formed of an aluminum substrate containing aluminum in an amount of not less than 99.00 mass % but less than 99.99 mass %, and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate.

2. The electron emitting device of claim 1 , wherein the first electrode is formed of an aluminum substrate or an aluminum layer, and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate or at a surface of the aluminum layer.

3. The electron emitting device of claim 1 , wherein aluminum is contained in an amount of 99.98 mass % or less in the aluminum substrate.

4. The electron emitting device of claim 1 , wherein the porous alumina layer has a thickness which is not less than 10 nm and not more than 5 μm.

5. The electron emitting device of claim 1 , wherein the plurality of pores have an opening having a two-dimensional size which is not less than 50 nm and not more than 3 μm as viewed from a normal direction of a surface thereof.

6. The electron emitting device of claim 1 , wherein the plurality of pores of the porous alumina layer have a depth which is not less than 10 nm and not more than 5 μm.

7. The electron emitting device of claim 1 , wherein a barrier layer included in the porous alumina layer has a thickness which is not less than 1 nm and not more than 1 μm.

8. The electron emitting device of claim 1 , wherein the second electrode includes a gold layer.

9. An electron emitting device comprising a first electrode, a second electrode, and a semi-conductive layer provided between the first electrode and the second electrode, wherein
the semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer, and
the plurality of pores of the porous alumina layer have a stepped side surface.

10. An electron emitting device comprising a first electrode, a second electrode, and a semi-conductive layer provided between the first electrode and the second electrode, wherein
the semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer, and
the silver contains silver nanoparticles having an average particle size which is not less than 1 nm and not more than 50 nm.

11. A method of producing an electron emitting device comprising a first electrode, a second electrode, and a semi-conductive layer provided between the first electrode and the second electrode, wherein
the semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer, the method comprising:
a step of providing an aluminum substrate or an aluminum layer supported by a substrate;
a step of anodizing a surface of the aluminum substrate or the aluminum layer to form a porous alumina layer; and
a step of applying silver nanoparticles in a plurality of pores of the porous alumina layer.

12. The production method of claim 11 , wherein the step of forming the porous alumina layer comprises an anodization step and an etching step to be performed after the anodization step.

13. The production method of claim 12 , wherein the step of forming the porous alumina layer comprises a further anodization step after the etching step.

Assignees

• Sharp Kk

Inventors

• Hayashi Hidekazu
• Taguchi Tokio
• Nakamatsu Kenichiro
• Iwamatsu Tadashi
• Shinkawa Kohji
• Takasaki Mai
• Kaneko Toshihiro
• Niinoh Atsushi

Classifications

• H01J1/312 Primary

  having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type {(H01J1/304- H01J1/308 take precedence)} · CPC title

• H01J9/42

  Measurement or testing during manufacture · CPC title

• H01J9/02

  Manufacture of electrodes or electrode systems · CPC title

• H01J9/022 Primary

  of cold cathodes · CPC title