Substrate treatment method and substrate treatment device

Patent metadata

Field	Value
Publication number	US-11875991-B2
Application number	US-201916973554-A
Country	US
Kind code	B2
Filing date	Jun 4, 2019
Priority date	Jun 13, 2018
Publication date	Jan 16, 2024
Grant date	Jan 16, 2024

Abstract

A substrate treatment method according to an embodiment of the present disclosure includes a temperature raising step of raising a temperature of a concentrated sulfuric acid, and a liquid supply step of supplying the concentrated sulfuric acid having the raised temperature to a substrate placed on a substrate processing part.

First claim

What is claimed is:

1. A substrate treatment method, comprising:
a temperature raising step of raising a temperature of a processing liquid comprising 98% by mass of sulfuric acid, wherein in the temperature raising step, the temperature of the processing liquid comprising 98% by mass of sulfuric acid is raised to a temperature in a range of 130 degrees C. to a boiling point of the processing liquid comprising 98% by mass of sulfuric acid;
a pure water addition step of adding pure water to the processing liquid of which the temperature is raised;
a liquid supply step of supplying the processing liquid to which the pure water is added to a substrate placed on a substrate processing part via a nozzle, wherein the processing liquid supplied to the substrate in the liquid supply step selectively etches one of two kinds of materials contained in a film formed on the substrate; and
a subsequent pure water supply step of supplying pure water to the substrate via the nozzle after the liquid supply step,
wherein, in the pure water addition step, the temperature of the processing liquid is further raised.

2. The substrate treatment method of claim 1 , wherein the processing liquid does not contain hydrogen peroxide.

3. The substrate treatment method of claim 1 , wherein in the pure water addition step, the pure water is added so that the processing liquid comprises 70 to 97% by mass of sulfuric acid.

4. The substrate treatment method of claim 1 , further comprising: a preliminary pure water supply step of supplying pure water to the substrate before the liquid supply step.

5. The substrate treatment method of claim 1 , wherein the film contains tungsten.

6. The substrate treatment method of claim 1 , wherein the film contains tungsten or aluminum oxide, and wherein the film contains titanium nitride.

7. The substrate treatment method of claim 1 , wherein the liquid supply step includes a step of removing residues on the substrate after a dry etching or a CMP process.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title