Apparatus and system for treating substrate

Patent metadata

Field	Value
Publication number	US-11869763-B2
Application number	US-202016861387-A
Country	US
Kind code	B2
Filing date	Apr 29, 2020
Priority date	Apr 30, 2019
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

An apparatus and system for treating a substrate includes a chamber having an inner space, a support unit in the inner space and configured to support and rotate the substrate, and first and second laser irradiation unit configured to irradiate first and second laser beams onto the substrate. The first laser irradiation unit includes a first laser light source configured to generate the first laser beam, and a first wavelength adjusting member configured to adjust a range of a wavelength of the first laser beam received from the first laser light source. The second laser beam, and a second wavelength adjusting member configured to adjust a range of a wavelength of the second laser beam received from the second laser light source.

First claim

What is claimed is:

1. An apparatus for treating a substrate, the apparatus comprising:
a chamber defining an inner space;
a support unit received in the inner space and configured to support and rotate the substrate;
a first laser irradiation unit configured to perform an edge bead removal (EBR) process by firing a first laser beam having a first wavelength to remove an exposed upper first layer of an organic film on an upper surface of the substrate that is supported on the support unit; and
a second laser irradiation unit configured to perform the EBR process by firing a second laser beam having a second wavelength, different than the first wavelength, to remove a second layer of the organic film on the upper surface of the substrate that is supported on the support unit,
wherein the first and second wavelengths are between 150 nm and 380 nm.

2. The apparatus of claim 1 , wherein the first laser irradiation unit and the second laser irradiation unit are configured so that each of the first laser beam and the second laser beam includes a plurality of pulsed laser beams.

3. The apparatus of claim 1 , further comprising:
an exhaust line connected to the chamber, the exhaust line configured to exhaust byproducts during the EBR process.

4. The apparatus of claim 1 , further comprising:
a vacuum member connected to the support unit, the vacuum member configured to apply suction to a bottom surface of the substrate.

5. The apparatus of claim 1 , wherein an upper seat surface of the support unit has a larger diameter than the substrate.

6. The apparatus of claim 1 , wherein
the support unit includes a support plate,
an upper surface of the support plate has a plurality of suction holes, and
the support plate is tapered such that a diameter of the upper surface of the support plate is greater than a diameter of a bottom of the support plate.

7. The apparatus of claim 1 , wherein an area of a seat surface of the support unit is less than an area of the substrate.

8. An apparatus for treating a substrate, the apparatus comprising:
a chamber defining an inner space;
a pedestal received in the inner space and configured to support the substrate;
a first laser irradiation unit configured to perform an edge bead removal (EBR) process by firing a first laser beam having a first wavelength to remove an exposed upper first layer of an organic film on an upper surface of the substrate that is supported on the pedestal; and
a second laser irradiation unit configured to perform the EBR process by firing a second laser beam having a second wavelength, different than the first wavelength, to remove a second layer of the organic film on the upper surface of the substrate that is supported on the pedestal,
wherein the first wavelength and the second wavelength are selected from among four wavelength ranges, a wavelength range of the first wavelength different from a wavelength range of the second wavelength, and
the four wavelength ranges include a first range of 750 nm to 1200 nm, a second range of 380 nm to 749 nm, a third range of 300 nm to 379 nm, and a fourth range of 150 nm to 299 nm.

9. The apparatus of claim 1 , wherein a diameter of a top surface of a support plate of the support unit is less than a diameter of a bottom surface of the support plate.

10. The apparatus of claim 8 , wherein an area of a seat surface of the pedestal is less than an area of the substrate.

11. The apparatus of claim 8 , wherein the first laser irradiation unit and the second laser irradiation unit are configured so that each of the first laser beam and the second laser beam includes a plurality of pulsed laser beams.

12. The apparatus of claim 8 , further comprising:
an exhaust line connected to the chamber, the exhaust line configured to exhaust byproducts during the EBR process.

13. The apparatus of claim 8 , further comprising:
a pump connected to the pedestal, the pump configured to apply suction to a bottom surface of the substrate.

14. The apparatus of claim 1 , wherein a diameter of a top surface of a support plate of the support unit is less than a diameter of a bottom surface of the support plate.

Assignees

• Semes Co Ltd

Inventors

• Ahn Jun Keon
• Park Soo Young
• Kwon Ohyeol
• Lee Jung Hwan
• Yang Seungtae

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10P70/54 Primary

  Cleaning of wafer edges · CPC title

• H10P70/70 Primary

  Cleaning only by lasers processes, e.g. laser ablation · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title