Additive process for circular printing of electronic devices

Patent metadata

Field	Value
Publication number	US-11865773-B2
Application number	US-201916680153-A
Country	US
Kind code	B2
Filing date	Nov 11, 2019
Priority date	Nov 11, 2019
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

First claim

What is claimed is:

1. A method of forming an electronic device, comprising:
rotating a semiconductor wafer relative to a plurality of additive sources, the semiconductor wafer having an axis of rotation, each additive source configured to produce an amount of an additive material on the semiconductor wafer in response to a corresponding actuation signal; and
directing towards each additive source the corresponding actuation signal, thereby forming over the semiconductor wafer an additive material layer that defines a feature of the electronic device, wherein each corresponding actuation signal includes a plurality of formation actuation signals each present at an integer increment of a period corresponding to an actuation frequency having a maximum that is proportional to a distance of the corresponding additive source from the center of rotation,
wherein each actuation signal includes null actuation events, wherein each corresponding additive source omits formation of the additive material on the wafer for each null actuation event provided to that additive source.

2. The method of claim 1 , wherein the amount is a predetermined uniform quantum of the additive material.

3. The method of claim 2 , wherein members of a proper subset of the formation actuation signals are spaced apart by a plurality of periods.

4. The method of claim 1 , wherein a printing zone encompasses outputs of the plurality of additive sources, and the additive sources are evenly spaced apart from each other within the printing zone.

5. The method of claim 1 , wherein the additive sources comprise drop-on-demand nozzles.

6. The method of claim 1 , wherein the additive sources comprise photonic emitters.

7. The method of claim 1 , further comprising distributing an additive material precursor onto a surface of the semiconductor wafer, wherein the additive material precursor is converted to the additive material by the additive sources.

8. The method of claim 7 , wherein the distributing includes dispensing the additive material precursor onto a roller, and
transferring the additive material precursor from the roller to the semiconductor wafer surface.

9. The method of claim 1 , wherein each additive source dispenses a fluid.

10. The method of claim 9 , wherein the fluid comprises a liquid binding agent.

11. A method of forming an electronic device, comprising:
locating a semiconductor wafer adjacent additive sources distributed across a printing zone, the printing zone having a first end located adjacent a center of the wafer, and having a second end located opposite from the first end;
rotating the semiconductor wafer with respect to the additive sources, wherein the semiconductor wafer has a center of rotation; and
operating each additive source at integer multiples of an incremental period corresponding an actuation frequency having a maximum that is proportional to a distance of the additive source from the center of rotation to form an additive material in a layer of the electronic device over the wafer, the layer of the additive material being located within a patterned layer, the second end of the printing zone extending to a perimeter of the patterned layer, wherein:
the additive sources are first additive sources;
the printing zone is a first printing zone;
the actuation frequency is a first actuation frequency;
the layer is a first layer;
the additive material is a first additive material;
the patterned layer is a first patterned layer; and
further comprising:
rotating the wafer with respect to the first additive sources and second additive sources distributed across a second printing zone, the second printing zone having a first end located at the center of the wafer, and having a second end, the second end of the second printing zone being located opposite from the first end of the second printing zone; and
operating each second additive source at a second actuation frequency having a maximum that is proportional to a distance of the second additive source from the center of rotation to form a second additive material in a second layer of the electronic device on the wafer concurrently with forming the first layer, the second layer of the second additive material being located within a second patterned layer, the second end of the second printing zone extending to a perimeter of the second patterned layer.

12. The method of claim 11 , wherein:
operating each additive source includes providing actuation signals at the actuation frequency to the additive source, the actuation signals including formation actuation signals, wherein the additive source forms a predetermined uniform amount of the additive material on the wafer for each formation actuation signal provided to the additive source; and
the actuation signals include null actuation signals, wherein the additive source omits formation of the additive material on the wafer for each null actuation signal provided to the additive source.

13. The method of claim 12 , wherein members of a proper subset of the formation actuation signals are spaced apart by a plurality of periods.

14. The method of claim 11 , wherein the additive material comprises silicon dioxide, silicon nitride, a metal, a polymer, or polycrystalline silicon.

15. The method of claim 11 , wherein a printing zone encompasses outputs of the additive sources, and the additive sources are evenly spaced apart from each other within the printing zone.

16. The method of claim 11 , wherein the additive sources comprise drop-on-demand nozzles.

17. The method of claim 11 , wherein the additive sources comprise photonic emitters.

18. The method of claim 11 , further comprising distributing an additive material precursor onto a surface of the semiconductor wafer, wherein the additive material precursor is converted to the additive material by the additive sources.

19. The method of claim 18 , wherein the distributing includes dispensing the additive material precursor onto a roller, and
transferring the additive material precursor from the roller to the semiconductor wafer surface.

20. A method of forming an electronic device, comprising:
locating a semiconductor wafer adjacent additive sources distributed across a printing zone, the printing zone having a first end located adjacent a center of the wafer, and having a second end located opposite from the first end;
rotating the semiconductor wafer with respect to the additive sources, wherein the semiconductor wafer has a center of rotation; and
operating each additive source at integer multiples of an incremental period corresponding an actuation frequency having a maximum that is proportional to a distance of the additive source from the center of rotation to form an additive material in a layer of the electronic device over the wafer, the layer of the additive material being located within a patterned layer, the second end of the printing zone extending to a perimeter of the patterned layer,
wherein:
operating each additive source includes providing actuation signals at the actuation frequency to the additive source, the actuation signals including formation actuation signals, wherein the additive source forms a predetermined uniform amount of the additive material on the wafer for each formation actuation signal provided to the additive source; and
the actuation signals include null actuation signals, wherein the additive source omits formation of the additive material on the wafer for each null actuation signal provided to the additive source.

Assignees

• Texas Instruments Inc

Inventors

• Revier Daniel Lee
• Chang Sean Ping
• Cook Benjamin Stassen

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6346

  using printing, e.g. ink-jet printing · CPC title

• H10P14/3456

  Polycrystalline · CPC title