Substrate support and plasma processing apparatus
US-11705302-B2 · Jul 18, 2023 · US
US11864299B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11864299-B2 |
| Application number | US-202217740859-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 10, 2022 |
| Priority date | May 10, 2022 |
| Publication date | Jan 2, 2024 |
| Grant date | Jan 2, 2024 |
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A system and method for reducing charge on a workpiece disposed on a platen is disclosed. The system includes an ionizer to generate ionized gas from the source of backside gas. The ionizer may be used to introduce ionized gas into the backside gas channels of the platen. A controller is used to selectively allow backside gas and/or ionized gas into the backside gas channels. In certain embodiments, the platen also includes an exhaust channel in communication with an exhaust valve to ensure that the pressure within the volume between the top surface of the platen and the workpiece is maintained in a desired range. In one embodiment, the system includes a valving system in communication with the source of backside gas and also in communication with the ionizer. In another embodiment, the amount of ionization performed by the ionizer is programmable.
Opening claim text (preview).
What is claimed is: 1. A system for reducing charge on a workpiece, comprising: a platen comprising a top surface having one or more openings; one or more backside gas channels, each in communication with a respective opening on the top surface; an ionizer, in communication with a backside gas supply to generate ionized gas; a valving system having an outlet in communication with the one or more backside gas channels, a first inlet in communication with the backside gas supply and a second inlet in communication with an output of the ionizer; and a controller, in communication with the valving system, to selectively allow a first amount of backside gas from the first inlet and a second amount of the ionized gas from the second inlet to pass to the outlet and into the one or more backside gas channels. 2. The system of claim 1 , wherein during normal operation, the controller controls the valving system to allow the first inlet to be in communication with the outlet and during a dismount sequence, the controller controls the valving system to allow the second inlet to be in communication with the outlet. 3. The system of claim 2 , wherein during normal operation, the second inlet is also in communication with the outlet to also introduce the ionized gas into the one or more backside gas channels. 4. The system of claim 1 , further comprising one or more exhaust channels in communication with the one or more openings on the top surface. 5. The system of claim 4 , further comprising an exhaust valve in communication with the one or more exhaust channels. 6. The system of claim 5 , wherein the controller opens the exhaust valve when the second inlet is in communication with the outlet. 7. The system of claim 1 , wherein the ionized gas passes through conduits that are non-electrically conductive. 8. A system for reducing charge on a workpiece, comprising: a platen comprising a top surface having one or more openings; one or more backside gas channels, each in communication with a respective opening on the top surface; an ionizer, in communication with a backside gas supply to generate ionized gas, wherein an amount of ionization provided by the ionizer is programmable; a valving system having an outlet in communication with the one or more backside gas channels, and an inlet in communication with an output of the ionizer; and a controller, in communication with the ionizer to control the amount of ionization provided by the ionizer, wherein the ionized gas is provided to the inlet of the valving system. 9. The system of claim 8 , wherein during normal operation, the ionizer produces a first percentage of ionization and during a dismount sequence, the ionizer produces a second percentage of ionization. 10. The system of claim 9 , wherein the second percentage is greater than the first percentage. 11. The system of claim 9 , wherein the first percentage is 0%. 12. The system of claim 8 , further comprising one or more exhaust channels in communication with the one or more openings on the top surface. 13. The system of claim 12 , further comprising an exhaust valve in communication with the one or more exhaust channels. 14. The system of claim 13 , wherein the exhaust valve is open when the amount of ionization is greater than 0%. 15. A system for reducing charge on a workpiece, comprising: a platen comprising a top surface having one or more openings; one or more backside gas channels, each in communication with a respective opening on the top surface; and an ionizer, in communication with a backside gas supply to generate ionized gas; wherein, during at least a portion of time that a workpiece is disposed on the platen, the ionized gas is flowing through the one or more backside gas channels. 16. The system of claim 15 , wherein the at least a portion of time comprises a dismount sequence. 17. The system of claim 15 , wherein the at least a portion of time comprises normal operation when the workpiece is subject to a semiconductor process. 18. The system of claim 17 , wherein more of the ionized gas flows through the one or more backside gas channels during a dismount sequence than during normal operation. 19. The system of claim 15 , comprising exhaust channels in communication with the one or more openings on the top surface to allow the ionized gas to exit a volume between the top surface and a bottom surface of the workpiece.
by means of ionising radiation · CPC title
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