Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-11850697-B2
Application number	US-202017120857-A
Country	US
Kind code	B2
Filing date	Dec 14, 2020
Priority date	Dec 24, 2019
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a holding part configured to hold a substrate;
a rotating part configured to rotate the holding part to rotate the substrate together with the holding part;
a liquid supply part configured to supply a cleaning liquid to a main surface of the substrate;
a polishing head configured to polish the main surface of the substrate;
a moving part configured to move the polishing head in a radial direction of the substrate to scan the main surface of the substrate while pressing the polishing head against the main surface of the substrate; and
a controller programmed to control the rotating part, the liquid supply part, and the moving part to execute:
setting one or more division lines that divide the main surface of the substrate into a plurality of areas in the radial direction of the substrate; and
while rotating the substrate by the rotating part, performing a cycle including:
supplying, by the liquid supply part, the cleaning liquid to the main surface of the substrate to form a liquid film on the main surface of the substrate;
after the liquid film is formed, stopping the supply of the cleaning liquid;
in a state in which the supply of the cleaning liquid is stopped, moving, by the moving part, the polishing head to scan the main surface of the substrate; and
when the polishing head reaches one of the division lines, stopping the movement of the polishing head.

2. The substrate processing apparatus of claim 1 , wherein the controller sets one or more of a polishing pressure of the polishing head, a scanning speed of the polishing head, and a rotation speed of the substrate for each of the plurality of areas.

3. The substrate processing apparatus of claim 2 , wherein the controller further sets one or more of the polishing pressure of the polishing head, the scanning speed of the polishing head, and the rotation speed of the substrate according to a condition of the main surface of the substrate.

4. The substrate processing apparatus of claim 3 , wherein the condition of the main surface of the substrate includes a material of a film formed on the main surface.

5. The substrate processing apparatus of claim 4 , wherein the condition of the main surface of the substrate further includes a radial distribution of a surface roughness of the main surface after polishing.

6. The substrate processing apparatus of claim 3 , wherein the condition of the main surface of the substrate includes a radial distribution of a surface roughness of the main surface after polishing.

7. A substrate processing method comprising:
setting one or more division lines that divide a main surface of a substrate into a plurality of areas in a radial direction of the substrate; and
while rotating the substrate, performing a cycle including:
supplying a cleaning liquid to the main surface of the substrate to form a liquid film on the main surface of the substrate;
after the liquid film is formed, stopping the supply of the cleaning liquid;
in a state in which the supply of the cleaning liquid is stopped, moving a polishing head to scan the main surface of the substrate; and
when the polishing head reaches one of the division lines, stopping the movement of the polishing head.

8. The substrate processing method of claim 7 , further comprising: setting one or more of a polishing pressure of the polishing head, a scanning speed of the polishing head, and a rotation speed of the substrate for each of the plurality of areas.

9. The substrate processing method of claim 8 , further comprising: setting one or more of the polishing pressure of the polishing head, the scanning speed of the polishing head, and the rotation speed of the substrate according to a condition of the main surface of the substrate.

10. The substrate processing method of claim 9 , wherein the condition of the main surface of the substrate includes a material of a film formed on the main surface.

11. The substrate processing method of claim 10 , wherein the condition of the main surface of the substrate further includes a radial distribution of a surface roughness of the main surface after polishing.

12. The substrate processing method of claim 9 , wherein the condition of the main surface of the substrate includes a radial distribution of a surface roughness of the main surface after polishing.

Assignees

• Tokyo Electron Ltd

Inventors

• Miyahara Osamu

Classifications

• H10P90/123

  by grinding or lapping · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title