Semiconductor device

Patent metadata

Field	Value
Publication number	US-11830945-B2
Application number	US-202217699898-A
Country	US
Kind code	B2
Filing date	Mar 21, 2022
Priority date	Sep 17, 2019
Publication date	Nov 28, 2023
Grant date	Nov 28, 2023

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first electrode;
a first semiconductor region provided on the first electrode and electrically connected to the first electrode, the first semiconductor region being of a first conductivity type;
a second electrode opposing a portion of the first semiconductor region in a second direction and a third direction with an insulating layer interposed, the second direction being perpendicular to a first direction from the first electrode toward the first semiconductor region, the third direction being perpendicular to the first direction and crossing the second direction, the second electrode having a circular configuration when viewed from the first direction;
a gate electrode provided in a grid pattern and enclosing a portion of the second electrodes along a first plane parallel to the second direction and the third direction;
a second semiconductor region opposing the gate electrode with a gate insulating layer interposed, being provided between the gate electrode and the second electrodes, and being of a second conductivity type;
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a third electrode provided on the second semiconductor region and the third semiconductor region and electrically connected to the second semiconductor region, the third semiconductor region, and the second electrode, and
a fourth semiconductor region of the second conductivity type, the fourth semiconductor region being located between the second electrode and the third semiconductor region, and the third semiconductor region being located between the fourth semiconductor region and the gate electrode.

2. The semiconductor device according to claim 1 , wherein
an upper end of the gate electrode is arranged with a portion of the fourth semiconductor region in the second direction.

3. The semiconductor device according to claim 1 , wherein
a lower end of the fourth semiconductor region is located below a lower end of the third semiconductor region and located above a lower end of the gate electrode.

4. The semiconductor device according to claim 1 , wherein
a length in the first direction of the gate electrode is longer than a length in the second direction of the second semiconductor region.

5. The semiconductor device according to claim 1 , wherein
the third electrode includes a contact portion,
a lower surface of the contact portion directly contacts with the second electrode, and
a length in the third direction of the contact portion is longer than a length in the third direction of the second electrode.

6. The semiconductor device according to claim 1 , wherein
a distance in the second direction between the second electrode and the gate electrode is shorter than a distance in a fourth direction between the second electrode and the gate electrode, and
the fourth direction is perpendicular to the first direction and crosses the second direction and the third direction.

7. The semiconductor device according to claim 1 , wherein
a plurality of the second electrodes is provided in the second direction and the third direction, and
the gate electrode is located around each of the plurality of second electrodes along the first plane.

8. The semiconductor device according to claim 7 , wherein
the plurality of second electrodes includes a pair of the second electrodes adjacent with each other in a fourth direction,
the fourth direction is perpendicular to the first direction and crosses the second direction and the third direction, and
the gate electrode includes a crossing part located between the pair of the second electrodes,
a length in the fourth direction of the crossing part is longer than a length in the second direction of the crossing part.

9. The semiconductor device according to claim 8 , wherein
a plurality of the second semiconductor regions is respectively provided between the plurality of second electrodes and the gate electrode, and
a plurality of the third semiconductor regions is respectively provided on the plurality of second semiconductor regions.

10. A semiconductor device, comprising:
a first electrode;
a first semiconductor region provided on the first electrode and electrically connected to the first electrode, the first semiconductor region being of a first conductivity type;
a second electrode opposing a portion of the first semiconductor region in a second direction and a third direction with an insulating layer interposed, the second direction being perpendicular to a first direction from the first electrode toward the first semiconductor region, the third direction being perpendicular to the first direction and crossing the second direction, the second electrode having a circular configuration when viewed from the first direction;
a gate electrode provided in a grid pattern and enclosing a portion of the second electrodes along a first plane parallel to the second direction and the third direction;
a second semiconductor region opposing the gate electrode with a gate insulating layer interposed, being provided between the gate electrode and the second electrodes, and being of a second conductivity type;
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a third electrode provided on the second semiconductor region and the third semiconductor region and electrically connected to the second semiconductor region, the third semiconductor region, and the second electrode,
the second semiconductor region has a first boundary surface in contact with the first semiconductor region,
the first boundary surface includes a first part and a second part,
a distance in the second direction between the first part and the gate electrode is longer than a distance in the second direction between the second part and the gate electrode, and
the first part is located below the second part.

11. The semiconductor device according to claim 10 , wherein
the second part is located above a lower end of the gate electrode.

12. The semiconductor device according to claim 10 , wherein
the second part is located directly below the third semiconductor region.

13. The semiconductor device according to claim 10 , wherein
a pair of the second semiconductor regions is provided, and
the gate electrode is located between the pair of the second semiconductor regions in the second direction.

14. The semiconductor device according to claim 13 , wherein
one of the pair of the second semiconductor regions has the first boundary surface,
the other one of the pair of the second semiconductor regions has a second boundary surface in contact with the first semiconductor region,
the second boundary surface includes a third part and a fourth part,
a distance in the second direction between the third part and the gate electrode is longer than a distance in the second direction between the fourth part and the gate electrode, and
the third part is located below the fourth part.

15. A semiconductor device, comprising:
a first electrode;
a first semiconductor region provided on the first electrode and electrically connected to the first electrode, the first semiconductor region being of a first conductivity type;
a second electrode opposing a portion of the first semiconductor region in a second direction and a third direction with an insulating layer interposed, the second direction being perpendicular to a first direction from the first electrode toward the

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Ichinoseki Kentaro
• Nishiwaki Tatsuya
• Sato Shingo

Classifications

• H10P32/1406

  by ion implantation · CPC title

• H10P32/171

  being group IV material · CPC title

• H10D64/519

  characterised by their top-view geometrical layouts · CPC title

• H10D64/516

  the thicknesses being non-uniform · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title