Fluorine-containing conductive films

Patent metadata

Field	Value
Publication number	US-11823976-B2
Application number	US-202217932605-A
Country	US
Kind code	B2
Filing date	Sep 15, 2022
Priority date	Apr 17, 2014
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

First claim

We claim:

1. An atomic layer deposition (ALD) process for depositing a metal fluoride thin film on a substrate, the process comprising a plurality of super-cycles, each super-cycle comprising a first sub-cycle and a second sub-cycle, wherein:
the first sub-cycle comprises contacting the substrate with reactant comprising a metal fluoride; and
the second sub-cycle comprises alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant, and
wherein the plurality of super-cycles forms the metal fluoride thin film comprising TiF 3 on the substrate.

2. The process of claim 1 , wherein the metal fluoride comprises a metal selected from Ti, Ta, Nb, Mo and W.

3. The process of claim 1 , wherein the metal fluoride thin film comprises about 5 to about 40 at % nitrogen.

4. The process of claim 1 , wherein the metal fluoride thin film is conductive.

5. The process of claim 1 , wherein the metal fluoride thin film is not oxidized by an air ambient at less than about 300° C.

6. The process of claim 1 , wherein the reactant comprising the metal fluoride comprises TiF 4 .

7. The process of claim 1 , wherein the reducing agent comprises silane or borane.

8. The process of claim 7 , wherein the reducing agent comprises disilane or trisilane.

9. The process of claim 1 , wherein the nitrogen reactant is selected from the group consisting of ammonia, N 2 H 4 , nitrogen atoms, nitrogen containing plasma and nitrogen radicals.

10. The process of claim 1 , wherein a ratio of carrying out the first sub-cycle to carrying out the second sub-cycle is at least about 0.1 in at least one of the plurality of super-cycles.

11. The process of claim 1 , wherein the metal fluoride thin film is not a nanolaminate film, and separate layers of metal fluoride and metal nitride are not observable in the metal fluoride thin film.

12. The process of claim 1 , wherein the metal fluoride thin film has a layer resistivity of less than 10 6 μΩcm.

13. An atomic layer deposition (ALD) process comprising:
conducting a plurality of super-cycles to form a fluorine-containing thin film comprising TiF 3 on a substrate, each super-cycle comprising a first sub-cycle and a second sub-cycle, and wherein:
the first sub-cycle comprises contacting the substrate with a metal fluoride; and
the second sub-cycle comprises contacting the substrate with a nitrogen reactant;
wherein at least one of a silane compound and a borane compound is separately provided in at least one of the first sub-cycle and the second sub-cycle.

14. The process of claim 13 , wherein at least one of the silane compound and the borane compound is provided in the first sub-cycle.

15. The process of claim 13 , wherein at least one of the silane compound and the borane compound is provided in the second sub-cycle.

16. The process of claim 13 , wherein the fluorine-containing thin film has a thickness of less than about 100 nm.

17. The process of claim 13 , wherein at least one of the silane compound, the borane compound, and the nitrogen reactant reduces at least some metal of the metal fluoride.

18. The process of claim 13 , wherein the fluorine-containing thin film exhibits substantially no oxidation at temperatures below about 300° C.

19. The process of claim 13 , wherein the fluorine-containing thin film has a resistivity of less than about 10 6 μΩcm.

20. The process of claim 13 , wherein the metal fluoride comprises TiF 4 .

Assignees

• Asm Ip Holding Bv

Inventors

• Blomberg Tom E
• Lindroos Linda
• Huotari Hannu

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10W72/00 Primary

  Interconnections or connectors in packages · CPC title

• H01L23/48 Primary

  Electricity · mapped topic