Thin film forming method

Patent metadata

Field	Value
Publication number	US-11823866-B2
Application number	US-202117217514-A
Country	US
Kind code	B2
Filing date	Mar 30, 2021
Priority date	Apr 2, 2020
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

First claim

What is claimed is:

1. A substrate processing method comprising:
providing a substrate with a trench in a reaction chamber;
pumping down the reaction chamber to a pressure at or below 5 Torr; and,
filling the trench with a film by a deposition cycle comprising:
supplying a precursor;
continuously supplying a reactant; and,
supplying a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component and, repeating the deposition cycle until the trench is filled with the film.

2. The method according to claim 1 , wherein the method comprises providing the relatively high radio frequency component and the relatively low radio frequency component at the same time.

3. The method according to claim 2 , wherein, at least one of the high radio frequency component and the low radio frequency component are supplied in pulses of duty ratio of approximately 10% to 75%.

4. The method according to claim 1 , wherein the method comprises providing the relatively high radio frequency component and the relatively low radio frequency component sequentially.

5. The method according to claim 4 , wherein the relatively high radio frequency component and the relatively low radio frequency component are partially overlapping.

6. The method according to claim 1 , wherein the reaction chamber is pumped down to a pressure less than 4 Torr or even 3 Torr or less.

7. The method according to claim 6 , wherein a wet etch rate and a density of the film filling a gap is uniform throughout the trench.

8. The method according to claim 1 , wherein the precursor is at least one of aminosilane, iodosilane and silicon halide or a combination thereof.

9. The method according to claim 8 , wherein the precursor is at least one of DIPAS, SiH 3 N(iPr) 2 , TSA, (SiH 3 ) 3 N, DSO, (SiH 3 ) 2 , DSMA, (SiH 3 ) 2 NMe, DSEA, (SiH 3 ) 2 Net, DSIPA, (SiH 3 ) 2 N(iPr), DSTBA, (SiH 3 ) 2 N(tBu), DEAS, SiH 3 NEt 2 , DTBAS, SiH 3 N(tBu) 2 , BDEAS, SiH 2 (NEt 2 ) 2 , BDMAS, SiH 2 (NMe 2 ) 2 , BTBAS, SiH 2 (NHtBu) 2 , BITS, SiH 2 (NHSiMe 3 ) 2 , TEOS, Si(OEt) 4 , SiCl 4 , HCD, Si 2 Cl 6 , 3DMAS, SiH(N(Me) 2 ) 3 ; BEMAS, SiH2[N(Et)(Me)] 2 ; AHEAD, Si 2 (NHEt) 6 ; TEAS, Si(NHEt) 4 ; Si 3 H 8 ; DCS, SiH 2 Cl 2 ; SiHI 3 , SiH 2 I 2 or a combination thereof.

10. The method according to claim 1 , wherein the reactant is at least one of O 2 , O 3 , N 2 O and CO 2 or a combination thereof.

11. The method according to claim 1 , wherein the method comprises purging in between supplying a precursor or a reactant and supplying radio frequency electromagnetic radiation.

12. The method according to claim 1 , wherein at least one of the high radio frequency component and the low radio frequency component are supplied in-situ.

13. The method according to claim 1 , wherein the power ratio of the high radio frequency component and the low radio frequency component is approximately 1 to 1 to 3 to 1 to form a uniform film in density throughout the trench.

14. The method according to claim 1 , wherein the frequency of the high radio frequency component is approximately 12 to 60 MHz and the frequency of the low radio frequency component is approximately 0.3 to 2 MHz.

Assignees

• Asm Ip Holding Bv

Inventors

• Kang Sungkyu
• Choi Jongwan
• Kim Younghoon
• Kim Hiechul
• Lee Kyungeun
• Yoo Taehee

Classifications

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title