Dual-clock generation circuit and method and electronic device

US11817860B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11817860-B2
Application numberUS-202217647885-A
CountryUS
Kind codeB2
Filing dateJan 13, 2022
Priority dateJul 14, 2021
Publication dateNov 14, 2023
Grant dateNov 14, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure relates to a dual-clock generation circuit and method and an electronic device, and relates to the technical field of integrated circuits. The dual-clock generation circuit includes: a first inverter module, configured to access a first signal and output a first clock output signal; a second inverter module, configured to access a second signal and output a second clock output signal, where the first signal and the second signal are opposite clock signals; a first feedforward buffer, disposed between an input terminal of the first inverter module and an output terminal of the second inverter module, and configured to transmit the first signal to compensate for the second clock output signal.

First claim

Opening claim text (preview).

The invention claimed is: 1. A dual-clock generation circuit, wherein the dual-clock generation circuit comprises: a first inverter module, configured to access a first signal and output a first clock output signal; a second inverter module, configured to access a second signal and output a second clock output signal, wherein the first signal and the second signal are opposite clock signals; a first feedforward buffer, disposed between an input terminal of the first inverter module and an output terminal of the second inverter module, and configured to transmit the first signal to compensate for the second clock output signal; a second feedforward buffer, disposed between an input terminal of the second inverter module and an output terminal of the first inverter module, and configured to transmit the second signal to delay the first clock output signal; a first switch, disposed on a line of the first feedforward buffer, and configured to control on/off of the first feedforward buffer; and a second switch, disposed on a line of the second feedforward buffer, and configured to control on/off of the second feedforward buffer; wherein the first switch and the second switch respectively access a frequency control signal, to be turned on or off under control of the frequency control signal; and wherein the first switch is configured to be turned on in response to a sampling frequency of the first signal being greater than a preset sampling rate, and the second switch is configured to be turned on in response to a sampling frequency of the second signal being greater than the preset sampling rate. 2. The circuit according to claim 1 , wherein the first switch and the second switch each are a complementary metal-oxide-semiconductor (CMOS) analog switch. 3. The circuit according to claim 1 , wherein the first feedforward buffer and the second feedforward buffer each are a complementary metal-oxide-semiconductor (CMOS) transistor comprising an N-type metal-oxide-semiconductor (NMOS) transistor and a P-type metal-oxide-semiconductor (PMOS) transistor. 4. The circuit according to claim 1 , wherein the first feedforward buffer and the second feedforward buffer each are an N-type metal-oxide-semiconductor (NMOS) transistor comprising two NMOS transistors. 5. The circuit according to claim 1 , wherein the first feedforward buffer and the second feedforward buffer each are a P-type metal-oxide-semiconductor (PMOS) transistor comprising two PMOS transistors. 6. The circuit according to claim 1 , wherein the first inverter module comprises a first inverter, and the second inverter module comprises a second inverter. 7. The circuit according to claim 6 , wherein the first inverter and the second inverter each are a complementary metal-oxide-semiconductor (CMOS) transistor comprising an N-type metal-oxide-semiconductor (NMOS) transistor and a P-type metal-oxide-semiconductor (PMOS) transistor. 8. An electronic device, wherein the electronic device comprises the dual-clock generation circuit according to claim 1 . 9. A method of generating a dual-clock, wherein the method is applied to a dual-clock generation circuit, the dual-clock generation circuit comprises a first inverter module configured to access a first signal, a second inverter module configured to access a second signal, a first feedforward buffer, and a second feedforward buffer, and the method comprises: disposing the first feedforward buffer between an input terminal of the first inverter module and an output terminal of the second inverter module, for transmitting the first signal, to compensate for a second clock output signal output by the second inverter module; disposing the second feedforward buffer between an input terminal of the second inverter module and an output terminal of the first inverter module, for transmitting the second signal, to delay a first clock output signal output by the first inverter module; disposing a first switch on a line of the first feedforward buffer, for controlling on/off of the first feedforward buffer; disposing a second switch on a line of the second feedforward buffer, for controlling on/off of the second feedforward buffer; and connecting a frequency control signal to each of the first switch and the second switch, for controlling the first switch and the second switch to be turned on or off under control of the frequency control signal; wherein the first switch is configured to be turned on in response to a sampling frequency of the first signal being greater than a preset sampling rate, and the second switch is configured to be turned on in response to a sampling frequency of the second signal being greater than the preset sampling rate. 10. The method according to claim 9 , wherein the method further comprises: setting the first feedforward buffer and the second feedforward buffer to be same or different metal-oxide-semiconductor (MOS) transistors, to perform phase calibration on at least one of a rising edge of the first signal or a falling edge of the first signal.

Assignees

Inventors

Classifications

  • with synchronous operation (H03K3/356034, H03K3/356052 take precedence) · CPC title

  • Clock generators with changeable or programmable clock frequency · CPC title

  • Interleaved, i.e. using multiple converters or converter parts for one channel · CPC title

  • Synchronisation of the sampling frequency or phase to the input frequency or phase · CPC title

  • H03K5/151Primary

    with two complementary outputs · CPC title

Patent family

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Frequently asked questions

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What does patent US11817860B2 cover?
The present disclosure relates to a dual-clock generation circuit and method and an electronic device, and relates to the technical field of integrated circuits. The dual-clock generation circuit includes: a first inverter module, configured to access a first signal and output a first clock output signal; a second inverter module, configured to access a second signal and output a second clock o…
Who is the assignee on this patent?
Changxin Memory Tech Inc
What technology area does this patent fall under?
Primary CPC classification H03K3/356026. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 14 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).