Method for depositing high quality PVD films

Patent metadata

Field	Value
Publication number	US-11802349-B2
Application number	US-202017016614-A
Country	US
Kind code	B2
Filing date	Sep 10, 2020
Priority date	Oct 25, 2019
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

First claim

What is claimed is:

1. A method for depositing a compound nitride material on a substrate, the method comprising:
depositing a first portion of a material layer on a substrate;
applying a first bias while depositing the first portion of the material layer, the first bias controlling a bow of the substrate;
halting deposition after depositing the first portion of the material layer;
obtaining a measured substrate bow after depositing the first portion of the material layer;
depositing a second portion of the material layer on the substrate; and
applying a second bias in response to the measured substrate bow while depositing the second portion of the material layer, the second bias different than the first bias.

2. The method of claim 1 , further comprising performing an argon bombardment process on the material layer, wherein the argon bombardment process comprises generating an argon plasma localized on a surface of the substrate and exposing the material layer to the argon plasma to reduce a surface roughness of the material layer, and wherein a power of the argon bombardment process is between about 250 W and about 1000 W and a duration of the argon bombardment process is between about 10 seconds and about 400 seconds.

3. The method of claim 2 , wherein a power used for the depositing the material layer is between about 4 kW and about 10 kW.

4. The method of claim 1 , wherein a thickness of the material layer is between about 100 nanometers and about 2500 nanometers.

5. The method of claim 1 , wherein the material layer comprises aluminum nitride.

6. The method of claim 5 , wherein the material layer further comprises scandium in a concentration between about 1 atomic percent and about 10 atomic percent.

7. The method of claim 5 , wherein the material layer further comprises scandium in a concentration between about 10 atomic percent and about 25 atomic percent.

8. The method of claim 1 , further comprising performing an argon bombardment process on the material layer.

9. The method of claim 1 , wherein a chamber pressure during the first portion of the material layer is between about 2 mTorr and about 6 mTorr.

10. The method of claim 1 , wherein the first bias applied to the substrate is between about 40 watts and about 100 watts.

11. The method of claim 1 , wherein the first bias is less than the second bias.

Assignees

• Applied Materials Inc

Inventors

• Yang Zihao
• Zhu Mingwei
• Patibandla Nag B
• Cao Yong
• Zhang Shumao
• Chen Zhebo
• Lu Jean
• Diehl Daniel Lee
• Tang Xianmin

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3416

  Nitrides · CPC title

• C30B23/002 Primary

  Controlling or regulating · CPC title

• C23C14/0641 Primary

  Nitrides (C23C14/0617 takes precedence) · CPC title