Method of deposition

Patent metadata

Field	Value
Publication number	US-10601388-B2
Application number	US-201615286283-A
Country	US
Kind code	B2
Filing date	Oct 5, 2016
Priority date	Oct 9, 2015
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

First claim

What is claimed is:

1. A sputtering method of forming an additive element containing aluminum nitride film of a piezoelectric device, the method comprising:
depositing aluminum nitride containing at least one additive element onto a film support of the piezoelectric device by applying pulsed DC electrical current to a single target comprising Al and the at least one additive element and with an electrical bias power applied to the film support of the piezoelectric device, to thereby sputter material from the target and form a first layer of the additive containing aluminum nitride film of the piezoelectric device; and
depositing aluminum nitride containing the at least one additive element onto the first layer by applying pulsed DC electrical current to the target and with no electrical bias power applied to the film support or with an electrical bias power applied to the film support of the piezoelectric device which is lower than the electrical bias power applied during the forming of the first layer, to thereby sputter material from the target and form a second layer of the additive containing aluminum nitride film of the piezoelectric device on the first layer,
in which the at least one additive element comprises at least one element selected from the group consisting of Sc and Y,
the second layer has the same composition as the first layer, and
the electrical bias power applied to the film support of the piezoelectric device in the forming of the first layer is an RF power.

2. A method according to claim 1 in which the at least one additive element is present in an amount in the range 0.5 At % to 40 At %.

3. A method according to claim 1 in which the at least one additive element is present in an amount in the range 2 At % to 15 At %.

4. A method according to claim 1 in which the at least one additive element is present in an amount in the range 3 At % to 10 At %.

5. A method according to claim 1 in which the additive containing aluminum nitride film of the piezoelectric device contains only one additive element, the one additive element being Sc or Y.

6. A method according to claim 1 in which the forming of the first layer is carried out with an electrical bias power of greater than 70 W applied to the film support of the piezoelectric device.

7. A method according to claim 4 in which the forming of the first layer is carried out with an electrical bias power of less than 250 W applied to the film support.

8. A method according to claim 1 in which the forming of the second layer is carried out with an electrical bias power of less than 125 W applied to the film support.

9. A method according to claim 1 in which the first layer is less tensile that the second layer.

10. A method according to claim 1 in which the first layer is formed to a thickness in the range 20 to 150 nm.

11. A method according to claim 1 in which the additive containing aluminum nitride film of the piezoelectric device is formed to a thickness of 0.3 micron or greater.

12. A method according to claim 10 in which the additive containing aluminum nitride film of the piezoelectric device is formed to a thickness of 2.0 micron or less.

13. A method according to claim 1 in which the additive containing aluminum nitride film of the piezoelectric device is formed to a thickness of 0.6 micron or greater.

14. A method according to claim 13 in which the additive containing aluminum nitride film of the piezoelectric device is formed to a thickness of 2.0 micron or less.

15. A method according to claim 1 in which no further additive containing aluminum nitride is deposited onto the second layer.

16. A method according to claim 1 in which the forming of the first and second layers is performed cyclically so that the additive containing aluminum nitride film of the piezoelectric device comprises four or more layers.

17. A method according to claim 1 in which the first layer is formed to a thickness in the range 20 to 150 nm, and the additive containing aluminum nitride film of the piezoelectric device is formed to a thickness of 0.6 micron or greater.

Assignees

• Spts Technologies Ltd

Inventors

• Burgess Stephen R
• Hyndman Rhonda
• Rastogi Amit
• Haymore Scott
• Fragos Constanine

Classifications

• C23C14/0641

  Nitrides (C23C14/0617 takes precedence) · CPC title

• C23C14/345

  using substrate bias · CPC title

• C23C14/0036 Primary

  Reactive sputtering · CPC title

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• C23C14/3485

  using pulsed power to the target · CPC title