Three dimensionally structured semiconductor light emitting diode and display apparatus

Patent metadata

Field	Value
Publication number	US-11784285-B2
Application number	US-202017022496-A
Country	US
Kind code	B2
Filing date	Sep 16, 2020
Priority date	Feb 4, 2020
Publication date	Oct 10, 2023
Grant date	Oct 10, 2023

Abstract

A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

First claim

What is claimed is:

1. A three-dimensionally structured semiconductor light emitting diode, comprising:
a first conductivity-type semiconductor rod having first and second portions integral with each other, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface extending between the first surface and the second surface;
an active layer and a second conductivity-type semiconductor layer sequentially disposed on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod;
an insulating cap layer on the second surface of the first conductivity-type semiconductor rod;
a transparent electrode layer on the second conductivity-type semiconductor layer; and
a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover a first end of the active layer and a first end of the second conductivity-type semiconductor layer adjacent to the first surface,
wherein the first conductivity-type semiconductor rod includes a regrowth layer on the side surface, the regrowth layer being on the second portion of the first conductivity-type semiconductor rod, and a combined structure of the regrowth layer with the first conductivity-type semiconductor rod having a hexagonal columnar shape, and
wherein the insulating cap layer overhangs the side surface of the first conductivity-type semiconductor rod.

2. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the first portion of the first conductivity-type semiconductor rod has a width smaller than a width of the second portion.

3. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the active layer has a second end coplanar with the second surface of the first conductivity-type semiconductor rod, the insulating cap layer covering and being in direct contact with the second end of the active layer.

4. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 3 , wherein the second conductivity-type semiconductor layer has a second end coplanar with the second surface of the first conductivity-type semiconductor rod, the insulating cap layer extending to the second end of the second conductivity-type semiconductor layer, and the transparent electrode layer being in direct contact with the second end of the second conductivity-type semiconductor layer and with the insulating cap layer.

5. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 4 , wherein the passivation layer includes a first insulating film on the second conductivity-type semiconductor layer, and a second insulating film on the first insulating film, the second insulating film extending to cover the first ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

6. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the passivation layer extends to a lateral surface of the first portion of the first conductivity-type semiconductor rod.

7. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the exposed portion of the transparent electrode layer overlaps the insulating cap layer.

8. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the exposed portion of the transparent electrode layer is on the side surface of the first conductivity-type semiconductor rod adjacent to the second surface.

9. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , further comprising:
a first connection electrode connected to the first surface of the first conductivity-type semiconductor rod; and
a second connection electrode connected to a portion of the transparent electrode layer on the insulating cap layer.

10. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 9 , wherein the first connection electrode extends to a lateral surface of the first portion of the first conductivity-type semiconductor rod.

11. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the first surface of the first conductivity-type semiconductor rod includes a cleavage plane of a first conductivity-type semiconductor.

12. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein the first conductivity-type semiconductor rod, the active layer, and the second conductivity-type semiconductor layer include nitride semiconductor single crystal.

13. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 1 , wherein an aspect ratio of the first conductivity-type semiconductor rod is equal to or greater than 4.

14. A three-dimensionally structured semiconductor light emitting diode, comprising:
a first conductivity-type semiconductor rod having first and second portions integral with each other, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface extending between the first surface and the second surface;
an active layer and a second conductivity-type semiconductor layer sequentially disposed on a lateral surface of the second portion of the first conductivity-type semiconductor rod;
an insulating cap layer on the second surface of the first conductivity-type semiconductor rod;
a transparent electrode layer on the insulating cap layer and on the second conductivity-type semiconductor layer; and
a passivation layer on the transparent electrode layer, the passivation layer exposing a portion of the transparent electrode layer on the insulating cap layer,

wherein the first conductivity-type semiconductor rod includes a regrowth layer on the side surface, the regrowth layer being on the second portion of the first conductivity-type semiconductor rod, and a combined structure of the regrowth layer with the first conductivity-type semiconductor rod having a hexagonal columnar shape, and
wherein the insulating cap layer overhangs the side surface of the first conductivity-type semiconductor rod.

15. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 14 , wherein the passivation layer covers a first end of the active layer and a first end of the second conductivity-type semiconductor layer adjacent to the first surface.

16. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 14 , further comprising:
a first connection electrode connected to the first surface of the first conductivity-type semiconductor rod, the first connection electrode extending to a lateral surface of the first portion adjacent to the first surface; and
a second connection electrode connected to a first portion of the transparent electrode layer on the insulating cap layer, the second connection electrode extending to a second portion of the transparent electrode layer adjacent to the second surface.

17. The three-dimensionally structured semiconductor light emitting diode as claimed in claim 14 , wherein a length of the first portion of the first conductivity-type semiconductor rod is within a range of about 20% to about 50%

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Youngjin
• Kim Joosung
• Seo Jonguk
• Ahn Sungjin
• Lee Donggun
• Lee Jeongwook
• Choi Yongseok
• Tak Youngjo
• Ha Jonghoon

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10W90/00

  Package configurations · CPC title

• H10H20/852

  Encapsulations · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/833

  Transparent materials · CPC title