Shielded Semiconductor Packages with Open Terminals and Methods of Making Via Two-Step Process
US-2020211977-A1 · Jul 2, 2020 · US
US11784133B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11784133-B2 |
| Application number | US-202017136197-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 29, 2020 |
| Priority date | Dec 14, 2018 |
| Publication date | Oct 10, 2023 |
| Grant date | Oct 10, 2023 |
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A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
Opening claim text (preview).
What is claimed: 1. A semiconductor device, comprising: a substrate including a plurality of contact pads formed over a portion of a surface of the substrate; an electrical component disposed over the surface of the substrate; an encapsulant deposited over the electrical component and substrate, wherein the portion of the surface of the substrate remains exposed from the encapsulant; and a shielding layer formed over the encapsulant, wherein the portion of the surface of the substrate is exposed from the shielding layer. 2. The semiconductor device of claim 1 , further including a laser disposed over the portion of the surface of the substrate. 3. The semiconductor device of claim 1 , further including a mask disposed over the portion of the surface of the substrate. 4. The semiconductor device of claim 1 , further including a jig with a tab of the jig disposed over the portion of the surface of the substrate. 5. The semiconductor device of claim 4 , further including an insulating layer physically contacting the tab of the jig and the portion of the surface of the substrate. 6. The semiconductor device of claim 1 , wherein the portion of the surface of the substrate includes a terminal or socket. 7. A semiconductor device, comprising: a substrate; an electrical component disposed over a surface of the substrate; an encapsulant deposited over the electrical component and substrate, wherein a portion of the surface of the substrate remains exposed from the encapsulant; a jig including a tab of the jig disposed over the portion of the surface of the substrate; and a shielding layer formed over the encapsulant and jig, wherein the shielding layer is formed on a side surface of the encapsulant and a side surface of the substrate. 8. The semiconductor device of claim 7 , further including an insulating layer disposed on the tab of the jig. 9. The semiconductor device of claim 8 , wherein the insulating layer is disposed in physical contact with the tab of the jig and the portion of the surface of the substrate. 10. The semiconductor device of claim 8 , wherein the insulating layer covers an entire surface of the jig. 11. The semiconductor device of claim 8 , wherein the insulating layer is a polyimide layer. 12. The semiconductor device of claim 7 , wherein the portion of the surface of the substrate includes a terminal or socket. 13. The semiconductor device of claim 7 , wherein the portion of the surface of the substrate includes a contact pad. 14. A semiconductor device, comprising: a substrate; an electrical component disposed over the substrate; an encapsulant deposited over the electrical component and substrate, wherein a portion of the substrate remains exposed from the encapsulant; and a shielding layer formed over the encapsulant, wherein the shielding layer physically contacts the substrate. 15. The semiconductor device of claim 14 , further including a laser disposed over the portion of the substrate. 16. The semiconductor device of claim 14 , further including a mask disposed over the portion of the substrate. 17. The semiconductor device of claim 14 , further including a jig including a tab of the jig disposed over the portion of the substrate. 18. The semiconductor device of claim 17 , further including an insulating layer disposed between the tab of the jig and the portion of the substrate. 19. The semiconductor device of claim 14 , wherein the portion of the substrate includes a contact pad. 20. A semiconductor device, comprising: a substrate; an encapsulant deposited over a first portion of the substrate; and a shielding layer formed over the encapsulant, wherein a second portion of the substrate including a plurality of contact pads is exposed from the encapsulant and shielding layer. 21. The semiconductor device of claim 20 , further including a contact pad disposed on the second portion of the substrate. 22. The semiconductor device of claim 21 , further including a semiconductor package disposed adjacent to the substrate outside the encapsulant, wherein the semiconductor package includes an interconnect structure connected to the contact pad. 23. The semiconductor device of claim 21 , wherein the contact pad is formed on a first surface of the substrate, and the encapsulant is deposited over the first surface of the substrate. 24. The semiconductor device of claim 20 , further including a radio frequency (RF) electrical component disposed over the substrate within the encapsulant. 25. The semiconductor device of claim 20 , wherein a top surface and every side surface of the encapsulant are completely covered by the shielding layer.
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