Nano memory device

US11778933B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11778933-B2
Application numberUS-202117469080-A
CountryUS
Kind codeB2
Filing dateSep 8, 2021
Priority dateApr 12, 2018
Publication dateOct 3, 2023
Grant dateOct 3, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.

First claim

Opening claim text (preview).

What is claimed is: 1. A non-volatile memory circuit, comprising: a nano-grease located between terminals of the non-volatile memory circuit, wherein the nano-grease exhibits non-volatile memory characteristics. 2. The non-volatile memory circuit of claim 1 , further comprising: a logic source; and a semi-conductive device being electrically coupled to the logic source. 3. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits memristive properties. 4. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits memcapacitive properties. 5. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits meminductive properties. 6. The non-volatile memory circuit of claim 1 , wherein the nano-grease can store the last known current passing through the nano-grease. 7. The non-volatile memory circuit of claim 1 , wherein the nano-grease can store the last known charge held by the nano-grease. 8. The non-volatile memory circuit of claim 1 , wherein the nano-grease comprises less than 2.5% by weight of single wall carbon nanotubes (SWNT). 9. The non-volatile memory circuit of claim 1 , wherein the nano-grease comprises less than 1.5% by weight of multi wall carbon nanotubes. 10. The non-volatile memory of circuit of claim 2 , wherein the logic source is an analog source. 11. A non-volatile memory circuit, comprising: a nano-grease located between a first and second terminal of a logic source, wherein the nano-grease exhibits non-volatile memory characteristics. 12. The non-volatile memory circuit of claim 11 , further comprising: a voltage source; and a semi-conductive device being electrically coupled to the logic source. 13. The non-volatile memory circuit of claim 11 , further comprising: a voltage sensor electrically coupled in parallel with a semi-conductive device capable of measuring the voltage drop at the semi-conductive device. 14. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits memristive properties. 15. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits memcapacitive properties. 16. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits meminductive properties. 17. The non-volatile memory circuit of claim 11 , wherein the nano-grease is comprised of a percentage of single wall carbon nanotubes (SWNT). 18. A method for a non-volatile memory circuit, comprising: disposing a nano-grease between circuit terminals, wherein the nano-grease exhibits non-volatile memory characteristics. 19. The method of claim 18 , further comprising: electrically coupling a semi-conductive device to a logic source having the circuit terminals. 20. The method of claim 18 , further comprising: storing electrical information in the nano-grease.

Assignees

Inventors

Classifications

  • Carbon or carbides · CPC title

  • Carbon; Graphite · CPC title

  • comprising selection components having two electrodes, e.g. diodes · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Specified physical {or chemical properties or characteristics, i.e. function,} of component of lubricating compositions · CPC title

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What does patent US11778933B2 cover?
A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein t…
Who is the assignee on this patent?
South Dakota Board Of Regents
What technology area does this patent fall under?
Primary CPC classification H10N70/8845. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 03 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).