Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US-9911743-B2 · Mar 6, 2018 · US
US11778933B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11778933-B2 |
| Application number | US-202117469080-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2021 |
| Priority date | Apr 12, 2018 |
| Publication date | Oct 3, 2023 |
| Grant date | Oct 3, 2023 |
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A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.
Opening claim text (preview).
What is claimed is: 1. A non-volatile memory circuit, comprising: a nano-grease located between terminals of the non-volatile memory circuit, wherein the nano-grease exhibits non-volatile memory characteristics. 2. The non-volatile memory circuit of claim 1 , further comprising: a logic source; and a semi-conductive device being electrically coupled to the logic source. 3. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits memristive properties. 4. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits memcapacitive properties. 5. The non-volatile memory circuit of claim 1 , wherein the nano-grease exhibits meminductive properties. 6. The non-volatile memory circuit of claim 1 , wherein the nano-grease can store the last known current passing through the nano-grease. 7. The non-volatile memory circuit of claim 1 , wherein the nano-grease can store the last known charge held by the nano-grease. 8. The non-volatile memory circuit of claim 1 , wherein the nano-grease comprises less than 2.5% by weight of single wall carbon nanotubes (SWNT). 9. The non-volatile memory circuit of claim 1 , wherein the nano-grease comprises less than 1.5% by weight of multi wall carbon nanotubes. 10. The non-volatile memory of circuit of claim 2 , wherein the logic source is an analog source. 11. A non-volatile memory circuit, comprising: a nano-grease located between a first and second terminal of a logic source, wherein the nano-grease exhibits non-volatile memory characteristics. 12. The non-volatile memory circuit of claim 11 , further comprising: a voltage source; and a semi-conductive device being electrically coupled to the logic source. 13. The non-volatile memory circuit of claim 11 , further comprising: a voltage sensor electrically coupled in parallel with a semi-conductive device capable of measuring the voltage drop at the semi-conductive device. 14. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits memristive properties. 15. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits memcapacitive properties. 16. The non-volatile memory circuit of claim 11 , wherein the nano-grease exhibits meminductive properties. 17. The non-volatile memory circuit of claim 11 , wherein the nano-grease is comprised of a percentage of single wall carbon nanotubes (SWNT). 18. A method for a non-volatile memory circuit, comprising: disposing a nano-grease between circuit terminals, wherein the nano-grease exhibits non-volatile memory characteristics. 19. The method of claim 18 , further comprising: electrically coupling a semi-conductive device to a logic source having the circuit terminals. 20. The method of claim 18 , further comprising: storing electrical information in the nano-grease.
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comprising selection components having two electrodes, e.g. diodes · CPC title
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
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