Perovskite film, precursor composition thereof, method for preparing the same, and semiconductor element including the same

Patent metadata

Field	Value
Publication number	US-11778839-B2
Application number	US-202017121887-A
Country	US
Kind code	B2
Filing date	Dec 15, 2020
Priority date	Oct 20, 2020
Publication date	Oct 3, 2023
Grant date	Oct 3, 2023

Abstract

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X] 3 .n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

First claim

What is claimed is:

1. A precursor composition for preparing a perovskite film, comprising:
a mixed solvent containing a dispersant and a polar solvent, wherein the dispersant is at least one selected from the group consisting of C 1-5 alkyl alcohol, C 2-6 alkoxy alcohol, and C 5-8 alkoxyalkyl ester, and the polar solvent is at least one selected from the group consisting of γ-butyrolactone, dimethyl sulfoxide, dimethylformamide, dimethylacetamide, 1,3-dimethyl propylene urea and N-methylpyrrolidone; and
a perovskite precursor salt and a molarity of 0.55 to 1.6 mM of crown ether compound dispersed or dissolved in the mixed solvent,
wherein the volume percentage of the dispersant in the precursor composition is 5 to 9.5%;
wherein the perovskite precursor salt comprises a compound of the chemical formula AX and a compound of the chemical formula BX 2 ;
wherein A is one monovalent cation selected from M 1 , M 2 and M 3 ;
wherein M 1 is a substituted or unsubstituted ammonium ion, M 2 is a substituted or unsubstituted amidine ion, M 3 is an alkali-metal ion selected from the group consisting of Cs + , Rb + , Li + and Na + , and each of the substituents of the M 1 and the M 2 is C 1-20 alkyl or C 6-20 aryl when the M 1 and the M 2 are substituted;
wherein B is one divalent cation selected from the group consisting of Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pb 2+ , Ge 2+ , Sn 2+ , Yb 2+ and Eu 2+ ;
wherein X of AX is one monovalent anions selected from the group consisting of F − , Cl − , Br − , I 31 , SCN − , and OCN − , and X of BX 2 is one monovalent anion selected from the group consisting of F − , Cl − , Br − , I − , SCN − , and OCN − ; and
wherein the crown ether compound is at least one selected from the group consisting of 12-crown-4, 15-crown-5, 18-crown-6,21-crown-7, 24-crown-8, and 30-crown-10.

2. The precursor composition of claim 1 , further comprising a colloidal particle with a size of less than 500 nm, and the colloidal particles comprise the compound and the crown ether compound.

3. The precursor composition of claim 1 , wherein the polar solvent comprises γ-butyrolactone and dimethyl sulfoxide, and the volume ratio of the γ-butyrolactone to the dimethyl sulfoxide is 10:1 to 1:10.

Assignees

• Ind Tech Res Inst

Inventors

• Huang Kuo-Wei
• Tung Yung-Liang
• Chiou Jung-Pin
• Chiu Pei-Ting
• Wu Shih-Hsiung

Classifications

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/151

  the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2 · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K30/10 Primary

  comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title

• C01B13/18 Primary

  by thermal decomposition of compounds, e.g. of salts or hydroxides · CPC title