Mesoporous Single Crystal Semiconductors
US-2015034150-A1 · Feb 5, 2015 · US
US10079320B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10079320-B2 |
| Application number | US-201314401452-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 20, 2013 |
| Priority date | May 18, 2012 |
| Publication date | Sep 18, 2018 |
| Grant date | Sep 18, 2018 |
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The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.
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The invention claimed is: 1. A photovoltaic device comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a photoactive layer, wherein the photoactive layer comprises a porous material and a charge transporting material disposed within pores of said porous material, which charge transporting material is a solid state hole transporting material, wherein the porous material consists of a porous semiconductor which is a porous perovskite wherein the perovskite comprises at least one halide anion; and (b) a compact layer comprising a metal oxide or a metal chalcogenide. 2. A photovoltaic device according to claim 1 wherein the perovskite is a photosensitizing material. 3. A photovoltaic device according to claim 1 wherein the perovskite has a band gap of equal to or less than 2.8 eV. 4. A photovoltaic device according to claim 1 wherein the perovskite is an intrinsic semiconductor, an n-type semiconductor, or a p-type semiconductor. 5. A photovoltaic device according to claim 1 wherein the hole transporting material comprises any of an organic hole transporting material, and a polymeric or molecular hole transporter. 6. A photovoltaic device according to claim 1 wherein the hole transporting material is selected from spiro-OMeTAD, P3HT, PCPDTBT and PVK. 7. A photovoltaic device according to claim 1 wherein the hole transporting material is an inorganic hole transporter, and the inorganic hole transporter is CuI, CuBr, CuSCN, Cu 2 O, CuO or CIS. 8. A photovoltaic device according to claim 1 , wherein the charge transporting material is an organic electron transporting material. 9. A photovoltaic device according to claim 1 wherein the perovskite comprises a first cation, a second cation, and said at least one halide anion. 10. A photovoltaic device according to claim 9 wherein the second cation is a metal cation selected from Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Sn 2+ , Yb 2+ and Eu 2+ . 11. A photovoltaic device according to claim 10 wherein the metal cation is selected from Sn 2+ , Pb 2+ and Cu 2+ . 12. A photovoltaic device according to claim 9 wherein the first cation is an organic cation. 13. A photovoltaic device according to claim 12 wherein the organic cation has the formula (R 1 R 2 R 3 R 4 N) + , wherein: R 1 is hydrogen, unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl; R 2 is hydrogen, unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl; R 3 is hydrogen, unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl; and R 4 is hydrogen, unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl. 14. A photovoltaic device according to claim 12 wherein the organic cation has the formula (R 5 NH 3 ) + , wherein R 5 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl. 15. A photovoltaic device according to claim 1 wherein the perovskite is a mixed-anion perovskite comprising two or more different anions selected from halide anions and chalcogenide anions, with the proviso that at least one of the anions is a halide anion. 16. A photovoltaic device according to claim 15 wherein the perovskite is a mixed-halide perovskite, wherein said two or more different anions are two or more different halide anions. 17. A photovoltaic device according to claim 1 wherein the perovskite is a perovskite compound of formula (I): [A][B][X] 3 (I) wherein: [A] is at least one organic cation; [B] is at least one metal cation; and [X] is said at least one anion; with the proviso that the perovskite compound comprises at least one halide anion. 18. A photovoltaic device according to claim 17 wherein [X] is two or more different anions selected from halide anions and chalcogenide anions, with the proviso that the perovskite compound comprises at least one halide anion. 19. A photovoltaic device according to claim 17 wherein [X] is two or more different halide anions. 20. A photovoltaic device according to claim 1 wherein the perovskite is a perovskite compound of formula (IA): AB[X] 3 (IA) wherein: A is an organic cation; B is a metal cation; and [X] is two or more different halide anions. 21. A photovoltaic device according to claim 1 wherein the perovskite is a perovskite compound of formula (II): ABX 3−y X′ y (II) wherein: A is an organic cation; B is a metal cation; X is a first halide anion; X′ is a second halide anion which is different from the first halide anion; and y is from 0.05 to 2.95. 22. A photovoltaic device according to claim 1 , wherein the perovskite is selected from CH 3 NH 3 PbBrI 2 , CH 3 NH 3 PbBrCl 2 , CH 3 NH 3 PbIBr 2 , CH 3 NH 3 PbICl 2 , CH 3 NH 3 PbClBr 2 , CH 3 NH 3 PbI 2 Cl, CH 3 NH 3 SnBrI 2 , CH 3 NH 3 SnBrCl 2 , CH 3 NH 3 SnF 2 Br, CH 3 NH 3 SnIBr 2 , CH 3 NH 3 SnICl 2 , CH 3 NH 3 SnF 2 I, CH 3 NH 3 SnClBr 2 , CH 3 NH 3 SnI 2 Cl and CH 3 NH 3 SnF 2 Cl. 23. A photovoltaic device according to claim 1 , wherein said perovskite is a first perovskite, and wherein the charge transporting material comprises a second perovskite, wherein the first and second perovskites are the same or different. 24. A photovoltaic device according to claim 23 wherein said first perovskite comprises a first cation, a second cation, and said at least one halide anion. 25. A photovoltaic device according to claim 23 wherein the second perovskite is a perovskite comprising a first cation, a second cation, and at least one anion. 26. A photovoltaic device according to claim 23 wherein the second perovskite is a perovskite compound of formula (IB): [A][B][X] 3 (IB) wherein: [A] is at least one organic cation or at least one Group I metal cation; [B] is at least one metal cation; and [X] is at least one anion. 27. A photovoltaic device according to claim 26 wherein [A] comprises Cs + . 28. A photovoltaic device according to claim 26 wherein [B] comprises Pb 2+ or Sn 2+ . 29. A photovoltaic device according to claim 26 wherein [X] comprises a halide anion or a plurality of different halide anions. 30. A photovoltaic device according to claim 26 wherein the perovskite compound of formula IB is CsPbI 3 or CsSnI 3 . 31. A photovoltaic device according to claim 26 wherein the perovskite compound of formula (IB) is CsPbI 2 Cl, CsPbICl 2 , CsPbI 2 F, CsPbIF 2 , CsPbI 2 Br, CsPbIBr 2 , CsSnI 2 Cl, CsSnICl 2 , CsSnI 2 F, CsSnIF 2 , CsSnI 2 Br or CsSnIBr 2 . 32. A photovoltaic device according to claim 26 wherein [X] is two or more different anions selected from halide anions and chalcogenide anions, with the proviso that the perovskite compound comprises at least one halide anion; and/or [A] comprises an organic cation; and/or [B] comprises a metal cation that is selected from Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Sn 2+ , Yb 2+ and Eu 2+ . 33. A photovoltaic device according to claim 23 wherein the second perovskite comprises a first cation, a second cation, and said at least one halide anion. 34. A photovoltaic device according to cl
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