Semiconductor device

Patent metadata

Field	Value
Publication number	US-11757041-B2
Application number	US-202217830376-A
Country	US
Kind code	B2
Filing date	Jun 2, 2022
Priority date	Dec 27, 2013
Publication date	Sep 12, 2023
Grant date	Sep 12, 2023

Abstract

A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

First claim

What is claimed is:

1. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising a first oxide semiconductor film and a conductive film comprising a light-transmitting conductive material;
a transistor comprising:
a second oxide semiconductor film;
a gate insulating film over the second oxide semiconductor film;
a gate electrode over the gate insulating film;

a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film;

an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the gate electrode is provided in a same layer as the source electrode and the drain electrode,
wherein the organic resin film comprises an opening portion,
wherein the conductive film comprises a first region over the organic resin film,
wherein the conductive film comprises a second region in the opening portion of the organic resin film,
wherein the second region overlaps with the insulating film and the first oxide semiconductor film,
wherein the second region does not overlap with the gate insulating film,
wherein the first oxide semiconductor film comprises a third region in contact with the insulating film in a cross-sectional view parallel to a channel length direction of the transistor, and
wherein the first oxide semiconductor film comprises a fourth region in contact with the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor.

2. The semiconductor device according to claim 1 ,
wherein the source electrode, the drain electrode, and the gate electrode comprise a same material.

3. The semiconductor device according to claim 1 ,
wherein a thickness of the source electrode and a thickness of the drain electrode are substantially the same as a thickness of the gate electrode.

4. The semiconductor device according to claim 1 ,
wherein a thickness of each of the gate electrode, the source electrode, and the drain electrode is greater than or equal to 30 nm and less than or equal to 500 nm.

5. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film comprise In, Ga, and Zn.

6. The semiconductor device according to claim 1 ,
wherein the gate insulating film comprises silicon oxide.

7. The semiconductor device according to claim 1 ,
wherein a width of each of the source electrode and the drain electrode is larger than a width of the second oxide semiconductor film in a cross-sectional view parallel to a channel width direction of the second oxide semiconductor film.

8. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising a first oxide semiconductor film and a conductive film comprising a light-transmitting conductive material;
a transistor comprising:
a second oxide semiconductor film;
a gate insulating film over the second oxide semiconductor film;
a gate electrode over the gate insulating film;

a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film;

an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the source electrode, the drain electrode, and the gate electrode have a same stacked-layer structure,
wherein the organic resin film comprises an opening portion,
wherein the conductive film comprises a first region over the organic resin film,
wherein the conductive film comprises a second region in the opening portion of the organic resin film,
wherein the second region overlaps with the insulating film and the first oxide semiconductor film,
wherein the second region does not overlap with the gate insulating film,
wherein the first oxide semiconductor film comprises a third region in contact with the insulating film in a cross-sectional view parallel to a channel length direction of the transistor, and
wherein the first oxide semiconductor film comprises a fourth region in contact with the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor.

9. The semiconductor device according to claim 8 ,
wherein the source electrode, the drain electrode, and the gate electrode comprise a same material.

10. The semiconductor device according to claim 8 ,
wherein a thickness of the source electrode and a thickness of the drain electrode are substantially the same as a thickness of the gate electrode.

11. The semiconductor device according to claim 8 ,
wherein a thickness of each of the gate electrode, the source electrode, and the drain electrode is greater than or equal to 30 nm and less than or equal to 500 nm.

12. The semiconductor device according to claim 8 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film comprise In, Ga, and Zn.

13. The semiconductor device according to claim 8 ,
wherein the gate insulating film comprises silicon oxide.

14. The semiconductor device according to claim 8 ,
wherein a width of each of the source electrode and the drain electrode is larger than a width of the second oxide semiconductor film in a cross-sectional view parallel to a channel width direction of the second oxide semiconductor film.

15. A semiconductor device comprising a pixel portion, the pixel portion comprising:
a capacitor comprising a first oxide semiconductor film and a conductive film comprising a light-transmitting conductive material;
a transistor comprising:
a second oxide semiconductor film;
a gate insulating film over the second oxide semiconductor film;
a gate electrode over the gate insulating film;

a source electrode electrically connected to the second oxide semiconductor film; and
a drain electrode electrically connected to the second oxide semiconductor film;

an insulating film over the source electrode and the drain electrode; and
an organic resin film over the insulating film,
wherein the transistor is electrically connected to the capacitor,
wherein the source electrode, the drain electrode, and the gate electrode have a same stacked-layer structure,
wherein the organic resin film comprises an opening portion,
wherein the conductive film comprises a first region over the organic resin film,
wherein the conductive film comprises a second region in the opening portion of the organic resin film,
wherein the second region overlaps with the insulating film and the first oxide semiconductor film,
wherein the second region does not overlap with the gate insulating film,
wherein the first oxide semiconductor film comprises a third region in contact with the insulating film in a cross-sectional view parallel to a channel length direction of the transistor,
wherein the first oxide semiconductor film comprises a fourth region in contact with the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor, and
wherein the insulating film is in contact with a top surface of the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor.

16. The semiconductor device according to claim 15 ,
wherein the source elect

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi
• Jintyou Masami
• Shima Yukinori
• Hamochi Takashi
• Nakazawa Yasutaka

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title