Hybrid bonding structure and hybrid bonding method

Patent metadata

Field	Value
Publication number	US-11756922-B2
Application number	US-202117525964-A
Country	US
Kind code	B2
Filing date	Nov 15, 2021
Priority date	May 15, 2019
Publication date	Sep 12, 2023
Grant date	Sep 12, 2023

Abstract

Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.

First claim

What is claimed is:

1. A hybrid bonding structure, comprising:
a first chip; and
a second chip, wherein
a surface of the first chip includes a first dielectric layer and a first metal layer, the first dielectric layer includes a first insulation dielectric, the first metal layer includes a first metal, and a first gap area exists between an edge of the first metal and the first insulation dielectric;
a surface of the second chip includes a second dielectric layer and a second metal layer, the second dielectric layer includes a second insulation dielectric, and the second metal layer includes a second metal;
a surface of the first metal is higher than a surface of the first insulation dielectric;
metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area, and
insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.

2. The hybrid bonding structure according to claim 1 , wherein a surface of the second metal is higher than a surface of the second insulation dielectric.

3. The hybrid bonding structure according to claim 1 , wherein a disc-shaped depression exists on the surface of the first metal and/or the surface of the second metal.

4. The hybrid bonding structure according to claim 3 , wherein a height difference between the surface of the first metal and the surface of the first insulation dielectric is greater than a sum of a depth of the disc-shaped depression on the surface of the first metal and a depth of the disc-shaped depression on the surface of the second metal.

5. The hybrid bonding structure according to claim 4 , wherein the height difference is used to ensure that the metallic bonding is formed before the insulation dielectric bonding in a bonding process.

6. The hybrid bonding structure according to claim 1 , wherein a second gap area exists between an edge of the second metal and the second insulation dielectric.

7. The hybrid bonding structure according to claim 6 , wherein a width range of the first gap area and/or the second gap area is between 10 nanometers and 1,000 nanometers.

8. The hybrid bonding structure according to claim 1 , wherein the first dielectric layer further comprises a third insulation dielectric, and the first gap area exists between the edge of the first metal and the third insulation dielectric.

9. The hybrid bonding structure according to claim 1 , wherein the first gap area is filled with an organic polymer.

10. The hybrid bonding structure according to claim 8 , wherein the first insulation dielectric is one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride, the second insulation dielectric is one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride, the first metal is one of copper, gold, silver, aluminum, nickel, tungsten, titanium, tin, conductive graphene, or a carbon nanotube, the second metal is one of copper, gold, silver, aluminum, nickel, tungsten, titanium, tin, conductive graphene, or a carbon nanotube; and the third insulation dielectric is one of silicon nitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride.

11. The hybrid bonding structure according to claim 10 , wherein the first insulation dielectric is same as the second insulation dielectric, and the first metal is same as the second metal.

12. The hybrid bonding structure according to claim 1 , wherein a cross section of the first metal and/or the second metal is rectangular, square, regularly trapezoidal, inversely trapezoidal, conical, or T-shaped.

13. A hybrid bonding method, comprising:
providing a first chip, wherein a surface of the first chip includes a first dielectric layer and a first metal layer, the first dielectric layer includes a first insulation dielectric, the first metal layer includes a first metal, a first gap area exists between an edge of the first metal and the first insulation dielectric, and a surface of the first metal is higher than a surface of the first insulation dielectric; and
providing a second chip, wherein a surface of the second chip includes a second dielectric layer and a second metal layer, the second dielectric layer includes a second insulation dielectric, and the second metal layer includes a second metal;
forming metallic bonding after the first metal is in contact with the second metal; and
longitudinally and transversely deforming the first metal in the first gap area, to form insulation dielectric bonding after the first insulation dielectric is in contact with the second insulation dielectric.

14. The method according to claim 13 , wherein a surface of the second metal is higher than a surface of the second insulation dielectric.

15. The method according to claim 13 , wherein a disc-shaped depression exists on the surface of the first metal and/or the surface of the second metal, wherein a height difference between the surface of the first metal and the surface of the first insulation dielectric is greater than a sum of a depth of the disc-shaped depression on the surface of the first metal and a depth of the disc-shaped depression on the surface of the second metal.

16. The method according to claim 13 , wherein a second gap area exists between an edge of the second metal and the second insulation dielectric, wherein a width range of the first gap area and/or the second gap area is between 10 nanometers and 1,000 nanometers.

17. The method according to claim 13 , wherein the first dielectric layer further comprises a third insulation dielectric, and the first gap area exists between the edge of the first metal and the third insulation dielectric.

18. The method according to claim 13 , wherein the first gap area is filled with an organic polymer.

19. The method according to claim 16 , wherein the first insulation dielectric is one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride, the second insulation dielectric is one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride, the first metal is one of copper, gold, silver, aluminum, nickel, tungsten, titanium, tin, conductive graphene, or a carbon nanotube, the second metal is one of copper, gold, silver, aluminum, nickel, tungsten, titanium, tin, conductive graphene, or a carbon nanotube, and the third insulation dielectric is one of silicon nitride, silicon carbonitride, aluminum oxide, amorphous silicon, silicon carbide, or aluminum nitride.

20. The method according to claim 18 , wherein the first insulation dielectric is same as the second insulation dielectric, and the first metal is same as the second metal.

Assignees

• Huawei Tech Co Ltd

Inventors

• He Ran
• Jiao Huifang
• Dai Yufeng
• Yang Guanglin
• Ho Chihon
• Xie Ronghua

Classifications

• H10W90/792

  between multiple chips · CPC title

• H10W80/732 Primary

  having shape changed during the connecting · CPC title

• H10W80/721

  having structure or size changed during the connecting · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title