Molybdenum containing targets

US11753702B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11753702-B2
Application numberUS-202017038325-A
CountryUS
Kind codeB2
Filing dateSep 30, 2020
Priority dateJun 30, 2010
Publication dateSep 12, 2023
Grant dateSep 12, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

First claim

Opening claim text (preview).

What is claimed is: 1. A sputter target that is sputterable to form a film comprising an alloy, the sputter target comprising molybdenum, titanium, vanadium, chromium, tantalum, and niobium, wherein (i) a total concentration of molybdenum, titanium, vanadium, chromium, tantalum, and niobium in the sputter target is 99 atomic percent or more, based on the total number of atoms in the sputter target, and (ii) the sputter target contains at least 50 atomic percent molybdenum. 2. The sputter target of claim 1 , wherein the total concentration of molybdenum, titanium, vanadium, chromium, tantalum, and niobium in the sputter target is 99.5 atomic percent or more, based on the total number of atoms in the sputter target. 3. The sputter target of claim 1 , wherein the sputter target contains at least 65 atomic percent molybdenum. 4. The sputter target of claim 1 , wherein the sputter target contains no more than 95 atomic percent molybdenum. 5. The sputter target of claim 1 , wherein the sputter target contains no more than 85 atomic percent molybdenum. 6. The sputter target of claim 1 , wherein the sputter target contains no more than 81 atomic percent molybdenum. 7. The sputter target of claim 1 , wherein the sputter target comprises a plurality of phases. 8. The sputter target of claim 7 , wherein the plurality of phases comprises one or more first phases, each first phase (i) comprising at least 50 atomic percent molybdenum and (ii) being a continuous phase. 9. The sputter target of claim 8 , wherein the plurality of phases comprises one or more discrete phases dispersed within at least one of the first phases. 10. A method for manufacturing a touch screen device, the method comprising: depositing a molybdenum alloy layer over a substrate; and depositing a conductive layer over the molybdenum alloy layer, wherein the molybdenum alloy layer is deposited by sputtering the sputter target of claim 1 . 11. The method of claim 10 , further comprising etching the molybdenum alloy layer before depositing the conductive layer. 12. The method of claim 10 , wherein the conductive layer comprises at least one of Cu, Al, Ag, or Au. 13. The method of claim 10 , further comprising, before depositing the molybdenum alloy layer, at least one of (i) removing an oxide from the sputter target or (ii) removing an oxide from the substrate. 14. The method of claim 10 , wherein the substrate comprises glass. 15. The method of claim 10 , wherein the substrate comprises silicon. 16. The method of claim 10 , wherein a thickness of the molybdenum alloy layer is less than 200 nm. 17. The sputter target of claim 1 , wherein the sputter target consists of molybdenum, titanium, vanadium, chromium, tantalum, and niobium.

Assignees

Inventors

Classifications

  • C22C27/04Primary

    Alloys based on tungsten or molybdenum · CPC title

  • C23C14/185Primary

    by cathodic sputtering · CPC title

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

  • Cathode assembly for sputtering apparatus, e.g. Target · CPC title

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What does patent US11753702B2 cover?
The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred as…
Who is the assignee on this patent?
Starck H C Inc, H C Starck Solutions Euclid Llc
What technology area does this patent fall under?
Primary CPC classification C22C27/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 12 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).