Touch screen device comprising Mo-based film layer and methods thereof

Patent metadata

Field	Value
Publication number	US-9945023-B2
Application number	US-201514669258-A
Country	US
Kind code	B2
Filing date	Mar 26, 2015
Priority date	Jun 30, 2010
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

First claim

What is claimed is:

1. A touch screen device comprising:
a film layer including:
i) 50 atomic % to 98 atomic % molybdenum, based on the total number of atoms in the film layer;
ii) 0.5 atomic % or more niobium, based on the total number of atoms in the film layer; and
iii) 0.5 atomic % or more tantalum, based on the total number of atoms in the film layer;
wherein:
the film layer has a thickness of 10 nm to 1 μm;
the film layer is interposed between a substrate layer and a conductive layer; and
the conductive layer comprises at least one of Cu, Al, Ag, or Au.

2. The touch screen device according to claim 1 , wherein the substrate layer is a layer of a glass.

3. The touch screen device according to claim 2 , wherein the film layer has a thickness of 10 nm to 200 nm.

4. The touch screen device according to claim 1 , wherein the concentration of molybdenum in the film layer is 75 atomic % to 98 atomic %.

5. The touch screen device according to claim 4 , wherein the concentration of niobium in the film layer is 20 atomic % or less.

6. The touch screen device according to claim 5 , wherein the concentration of tantalum in the film layer is 20 atomic % or less.

7. The touch screen device according to claim 6 , wherein the concentration of niobium in the film layer is about 1 atomic % to 10 atomic %.

8. The touch screen device according to claim 7 , wherein the concentration of tantalum in the film layer is about 1 atomic % to 10 atomic %.

9. The touch screen device according to claim 4 , wherein the total concentration of the tantalum and the niobium is 25 atomic percent or less.

10. The touch screen device according to claim 1 , wherein the conductive layer consists essentially of Cu, Al, Ag, or Au.

11. The touch screen device of claim 1 , wherein the film layer has a grain size of about 10 nm to about 200 nm.

12. The touch screen device of claim 1 , wherein at least a portion of the film layer is an alloy phase of the molybdenum, niobium, and tantalum.

13. The touch screen device of claim 1 , wherein at least a portion of the film layer has a columnar microstructure.

14. The touch screen device of claim 1 , wherein the substrate layer comprises a metal.

15. The touch screen device of claim 1 , wherein the substrate layer comprises silicon.

16. A touch screen device comprising:
i) a film layer, wherein the film layer includes 75 atomic % to 98 atomic % molybdenum; 0.5 atomic % to 10 atomic % niobium; and 0.5 atomic % to 10 atomic % tantalum;
ii) a substrate layer of a glass; and
iii) a conductive layer,
wherein:
the film layer is interposed between the substrate layer and a conductive layer,
the film layer has a thickness of 10 nm to 200 nm, and
the conductive layer comprises at least one of Cu, Al, Ag, or Au.

17. The touch screen device according to claim 16 , wherein the conductive layer consists essentially of Cu, Al, Ag, or Au.

18. A method for manufacturing a touch screen device comprising the steps of:
i) providing a glass substrate;
ii) depositing a molybdenum alloy layer over the glass substrate;
iii) etching the molybdenum alloy layer; and
iv) depositing a conductive layer over the molybdenum layer;
wherein:
the molybdenum alloy layer is deposited by sputtering a sputter target including molybdenum, tantalum, and niobium,
the alloy layer includes 50 atomic % to 98 atomic % molybdenum; 0.5 atomic % or more niobium; and 0.5 atomic % or more tantalum, and
the conductive layer comprises at least one of Cu, Al, Ag, or Au.

19. The method of claim 18 , wherein the molybdenum alloy layer has a thickness of 10 nm to 1 μm and is etched at a rate of about 150 nm/min or more.

20. The method of claim 18 , wherein the method includes removing an oxide layer from the sputter target.

21. The method of claim 18 , wherein the concentration of molybdenum in the molybdenum alloy layer is 75 atomic % to 98 atomic %; the concentration of niobium in the molybdenum alloy layer is about 1 atomic % to 10 atomic %; and the concentration of tantalum in the molybdenum alloy layer is about 1 atomic % to 10 atomic %.

22. The method of claim 21 , wherein molybdenum alloy layer has a grain size of about 10 nm to about 200 nm.

23. The method of claim 22 , wherein the sputter target has a density of about 96% or more of the theoretical density.

24. The method of claim 18 , wherein the conductive layer consists essentially of Cu, Al, Ag, or Au.

25. A method for manufacturing a touch screen device comprising the steps of:
i) depositing a molybdenum alloy layer over a silicon-containing layer;
ii) depositing a conductive layer over the silicon-containing layer, wherein the conductive layer contacts the molybdenum alloy layer; and
iii) etching the molybdenum alloy layer;
wherein:
the molybdenum alloy layer is deposited by sputtering a sputter target including molybdenum, tantalum, and niobium,
the alloy layer includes 50 atomic % to 98 atomic % molybdenum; 0.5 atomic % or more niobium; and 0.5 atomic % or more tantalum
the molybdenum alloy layer has a thickness of 10 nm to 1 μm, and
the conductive layer comprises at least one of Cu, Al, Ag, or Au.

Assignees

• Starck H C Inc

Inventors

• Rozak Gary Alan
• Gaydos Mark E
• Hogan Patrick Alan
• Sun Shuwei

Classifications

• C22C27/04 Primary

  Alloys based on tungsten or molybdenum · CPC title

• C23C14/185 Primary

  by cathodic sputtering · CPC title

• C22C1/045

  Alloys based on refractory metals · CPC title

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• Y10T428/265

  1 mil or less · CPC title