Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Patent metadata

Field	Value
Publication number	US-11749522-B2
Application number	US-202217572509-A
Country	US
Kind code	B2
Filing date	Jan 10, 2022
Priority date	Mar 29, 2017
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

First claim

The invention claimed is:

1. A composition for depositing a silicon-containing thin film, the composition comprising a bis(aminosilyl)alkylamine compound represented by the following Chemical Formula 2 or 3:

in Chemical Formula 2 or 3,
R is C1-C7alkyl or C2-C7alkenyl;
R 5 to R 7 are each independently hydrogen, halogen, C1-C7alkyl, or C2-C7alkenyl;
R 11 to R 14 are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; and
n and m are each independently an integer of 1 to 7.

2. The composition of claim 1 , wherein in Chemical Formula 2 or 3, R 5 to R 7 are each
independently hydrogen or C1-C7alkyl;
R 11 to R 14 are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; and
n and m are each independently an integer of 1 to 4.

3. The composition of claim 1 , wherein the bis(aminosilyl)alkylamine compound represented by Chemical Formula 2 or 3 is represented by the following Chemical Formula 6 or 7:

in Chemical Formulas 6 and 7,
R is C1-C7alkyl or C2-C7alkenyl;
R 11 to R 14 are each independently hydrogen, C1-C7alkyl, or C2-C7alkenyl; and
n and m are each independently an integer of 1 to 7.

4. The composition of claim 3 , wherein in Chemical Formulas 6 and 7, R is C1-C5alkyl;
R 11 to R 14 are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; and
n and m are each independently an integer of 1 to 4.

5. The composition of claim 1 , wherein the bis(aminosily)alkylamine compound is selected from the following compounds:

6. A bis(aminosilyl)alkylamine compound represented by the following Chemical Formula 2 or 3:

in Chemical Formula 2 or 3,
R is C1-C7alkyl or C2-C7alkenyl;
R 5 to R 7 are each independently hydrogen, halogen, C1-C7alkyl, or C2-C7alkenyl;
R 11 to R 14 are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; and
n and m are each independently an integer of 1 to 7.

7. The bis(aminosilyl)alkylamine compound of claim 6 , wherein the bis(aminosilyl)alkylamine compound represented by Chemical Formula 2 or 3 is represented by the following Chemical Formula 6 or 7:

in Chemical Formulas 6 and 7,
R is C1-C7alkyl or C2-C7alkenyl;
R 11 to R 14 are each independently hydrogen, C1-C7alkyl, or C2-C7alkenyl; and
n and m are each independently an integer of 1 to 7.

Assignees

• Dnf Co Ltd

Inventors

• Kim Sung Gi
• Park Jeong Joo
• Park Joong Jin
• Jang Se Jin
• Yang Byeong-Il
• Lee Sang-Do
• Lee Sam Dong
• Lee Sang Ick
• Kim Myong Woon

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title