Atomic layer deposition of silicon carbon nitride based materials

Patent metadata

Field	Value
Publication number	US-2016307751-A1
Application number	US-201615196985-A
Country	US
Kind code	A1
Filing date	Jun 29, 2016
Priority date	Dec 11, 2013
Publication date	Oct 20, 2016
Grant date	—

Abstract

A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

First claim

What is claimed is:

1 . A method of treating a silicon carbon nitride film on a three-dimensional structure having a sidewall region and a top region, the method comprising:
exposing the silicon carbon nitride film on the substrate to a hydrogen-containing plasma generated from a reactant gas that comprises hydrogen gas (H 2 ), wherein a ratio of a wet etch rate of the sidewall region to a wet etch rate of the top region of the treated silicon carbon nitride film is less than 3 as measured in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %.

2 . The method of claim 1 , wherein the treated silicon carbon nitride film has a wet etch rate that is less than about 50% of the wet etch rate of thermal silicon oxide, as measured in dilute hydrofluoric acid having a concentration of 0.5 weight %.

3 . The method of claim 1 , wherein the treated silicon carbon nitride film has a wet etch rate of less than about 1 nm/min in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %.

4 . The method of claim 1 , wherein the three-dimensional structure has an aspect ratio of six or higher.

5 . The method of claim 1 , wherein the reactant gas comprises a noble gas.

6 . The method of claim 5 , wherein the reactant gas comprises N 2 , H 2 and Ar.

7 . The method of claim 5 , wherein the reactant gas consists of hydrogen gas (H 2 ) and a noble gas.

8 . The method of claim 1 , wherein the silicon carbon nitride film is exposed to the hydrogen-containing plasma for at least 30 seconds.

9 . The method of claim 8 , wherein the silicon carbon nitride film is exposed to the hydrogen-containing plasma for at least 10 minutes.

10 . The method of claim 1 , wherein the hydrogen-containing plasma is generated by applying RF power from about 100 W to about 500 W to the reactant gas.

11 . The method of claim 1 , wherein the plasma treatment is repeated multiple times.

12 . The method of claim 1 , wherein exposing the silicon carbon nitride film to the hydrogen-containing plasma comprises a plurality of cycles in which the plasma is turned on for a first duration of time and turned off for a second duration of time.

13 . The method of claim 12 , wherein the duration in which the plasma is turned on differs in two or more cycles.

14 . The method of claim 1 , additionally comprising depositing SiN over the treated silicon carbon nitride film.

15 . The method of claim 14 , wherein the SiN is deposited by atomic layer deposition (ALD) after exposing the silicon carbon nitride film to the hydrogen-containing plasma.

16 . The method of claim 15 , wherein the atomic layer deposition process comprises at least one silicon nitride deposition cycle comprising alternately and sequentially contacting the substrate with a first silicon precursor and a second nitrogen precursor.

17 . The method of claim 14 , additionally comprising depositing silicon carbon nitride over the SiN by an atomic layer deposition (ALD) process.

18 . The method of claim 17 , wherein the ALD process comprises at least one silicon carbon nitride deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising silicon and carbon and a second precursor comprising nitrogen.

19 . The method of claim 18 , wherein the precursor comprising silicon and carbon comprises a —Si—R—Si— group, where R comprises a C 1 to C 8 hydrocarbon.

20 . The method of claim 18 , wherein the precursor comprising silicon and carbon comprises at least one of bis(trichlorosilyl)methane (BTCSMe) and 1,2-bis(trichlorosilyl)ethane (BTCSEt).

Assignees

• Asm Ip Holding Bv

Inventors

• Pore Viljami

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title