Method and apparatus for imaging using narrowed bandwidth

Patent metadata

Field	Value
Publication number	US-11747739-B2
Application number	US-202017434802-A
Country	US
Kind code	B2
Filing date	Feb 10, 2020
Priority date	Mar 3, 2019
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

Systems, methods, and computer programs for increasing a contrast for a lithography system are disclosed. In one aspect, a method of optimizing a process for imaging a feature on a substrate using a photolithography system is disclosed, the method including obtaining an optical spectrum of a light beam for the imaging, wherein the light beam includes pulses having a plurality of different wavelengths, and narrowing the optical spectrum of the pulses of the light beam for the imaging to improve a quality metric of the imaging.

First claim

What is claimed is:

1. A method for optimizing a process for illuminating a patterning device with an illumination radiation beam to image a feature on a substrate using a photolithography system, the method comprising:
obtaining an optical spectrum of the radiation beam for the illumination of the patterning device for imaging, wherein the radiation beam includes pulses having a plurality of different wavelengths;
selecting a difference in values between first and second wavelengths of the plurality of different wavelengths of the radiation beam to illuminate the patterning device to increase a depth of focus; and
narrowing the optical spectrum associated with the first and/or second wavelength respectively of the pulses of the radiation beam to illuminate the patterning device to improve a quality metric of the imaging.

2. The method of claim 1 , further comprising:
obtaining a design for the patterning device configured to produce the feature on the substrate;
obtaining a radiation illumination design for the imaging; and
iteratively varying, concurrently, the optical spectrum of the radiation beam, the patterning device design, and the radiation illumination design to provide an optimized optical spectrum, an optimized patterning device design, and an optimized radiation illumination design.

3. The method of claim 1 , wherein a bandwidth of each pulse is between 50 fm and 275 fm.

4. The method of claim 3 , wherein the radiation beam is generated in a laser having a nominal bandwidth of 300 fm and wherein a line narrowing module of the laser is adjusted to produce the bandwidth of 50 fm to 275 fm.

5. The method of claim 1 , comprising selecting the bandwidth to produce an improvement in a quality metric of the imaging process.

6. The method of claim 1 , wherein the quality metric is contrast.

7. The method of claim 1 , wherein the quality metric is image log slope or normalized image log slope.

8. The method of claim 1 , wherein the quality metric is exposure latitude.

9. The method of claim 1 , further comprising optimizing a radiation illumination design and/or a patterning device design based at least in part on a bandwidth of the pulses.

10. The method of claim 9 , wherein the optimizing comprises iteratively varying, concurrently, an optical spectrum of the radiation beam, the patterning device design, and the radiation illumination design to provide an optimized optical spectrum, an optimized patterning device design, and an optimized radiation illumination design.

11. The method of claim 1 , further comprising imaging the feature on the substrate.

12. The method of claim 1 , further comprising:
generating, during a single exposure pass, at least a first aerial image and a second aerial image on the substrate, the first aerial image being at a first plane on the substrate and the second aerial image being at a second plane on the substrate, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and
forming a three-dimensional semiconductor component based on an interaction between radiation in the first aerial image and a material in a first portion of the substrate and an interaction between radiation in the second aerial image and a material in a second portion of the substrate.

13. A computer program product comprising a non-transitory computer-readable medium having executable instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain an optical spectrum of a radiation beam for illuminating a patterning device to image a feature on a substrate using a photolithography system, wherein the radiation beam includes pulses having a plurality of different wavelengths;
select a difference in values between first and second wavelengths of the plurality of different wavelengths of the radiation beam to illuminate the patterning device to increase a depth of focus; and
narrow the optical spectrum associated with the first and/or second wavelength respectively of the pulses of the radiation beam to illuminate the patterning device to improve a quality metric of the imaging.

14. The computer program product of claim 13 , wherein a bandwidth of each pulse is between 50 fm and 275 fm.

15. The computer program product of claim 14 , wherein the radiation beam is generated in a laser having a nominal bandwidth of 300 fm and wherein the instructions are configured to generate data to adjust a line narrowing module of the laser to produce the bandwidth of 50 fm to 275 fm.

16. The computer program product of claim 13 , wherein the quality metric is contrast, image log slope, normalized image log slope or exposure latitude.

17. The computer program product of claim 13 , wherein the instructions are further configured to cause the computer system to:
obtain a design for a patterning device configured to produce the feature on the substrate;
obtain a radiation illumination design for the imaging; and
iteratively vary, concurrently, the optical spectrum of the radiation beam, the patterning device design, and the radiation illumination design to provide an optimized optical spectrum, an optimized patterning device design, and an optimized radiation illumination design.

18. The computer program product of claim 13 , wherein the instructions are further configured to cause the computer system to optimize a radiation illumination design and/or a patterning device design based at least in part on a bandwidth of the pulses.

19. The computer program product of claim 13 , wherein the instructions configured to cause the computer system to optimize the radiation illumination design and/or the patterning device design are further configured to cause the computer system to iteratively vary, concurrently, an optical spectrum of the radiation beam, the patterning device design, and the radiation illumination design to provide an optimized optical spectrum, an optimized patterning device design, and an optimized radiation illumination design.

20. The computer program product of claim 13 , wherein the quality metric is contrast, image log slope or normalized image log slope, or exposure latitude.

Assignees

• Asml Netherlands Bv
• Cymer LLC
• Asml Netherlands

Inventors

• Conley Willard Earl
• Thornes Joshua Jon
• Hsu Duan-Fu Stephen

Classifications

• G03F7/706849

  Irradiation branch, e.g. optical system details, illumination mode or polarisation control · CPC title

• G03F7/70575 Primary

  Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title