Chemical liquid, chemical liquid storage body, pattern forming method, and kit

Patent metadata

Field	Value
Publication number	US-11747727-B2
Application number	US-201916390023-A
Country	US
Kind code	B2
Filing date	Apr 22, 2019
Priority date	Nov 18, 2016
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.

First claim

What is claimed is:

1. A chemical liquid comprising:
a mixture of two or more kinds of organic solvents;
at least one kind or more of an organic impurity; and
an impurity metal of Pb,
wherein a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.,
the at least one kind or more of the organic impurity contains at least one kind or more of an organic compound which has a boiling point equal to or higher than 250° C. and contains 8 or more carbon atoms, and
a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt.

2. The chemical liquid according to claim 1 ,
wherein the impurity metal contained in the chemical liquid is particles, and
a content of the particles in the chemical liquid is 0.001 to 30 mass ppt.

3. The chemical liquid according to claim 1 ,
wherein a surface tension of the mixture is 25 to 40 mN/m at 25° C.

4. The chemical liquid according to claim 1 ,
wherein the mixture contains the organic solvent having a Hansen solubility parameter higher than 10 (MPa) 0.5 in terms of a hydrogen bond element or having a Hansen solubility parameter higher than 16.5 (MPa) 0.5 in terms of a dispersion element.

5. The chemical liquid according to claim 1 ,
wherein the number of objects to be counted having a size equal to or greater than 100 nm that are counted by a light scattering-type liquid-borne particle counter is 1 to 100/mL.

6. The chemical liquid according to claim 1 , further comprising:
water,
wherein a content of the water in the chemical liquid is 0.01 to 1.0% by mass.

7. The chemical liquid according to claim 1 ,
wherein the number of carbon atoms in one molecule of the organic compound is equal to or greater than 12.

8. The chemical liquid according to claim 1 ,
wherein the at least one kind or more of the organic compound has a CLogP value higher than 6.5.

9. The chemical liquid according to claim 8 ,
wherein in a case where the chemical liquid contains one kind of the organic compound having a CLogP value higher than 6.5, a content of the organic compound having a CLogP value higher than 6.5 with respect to a total mass of the chemical liquid is 0.01 mass ppt to 10 mass ppb, and
in a case where the chemical liquid contains two or more kinds of the organic compounds having a CLogP value higher than 6.5, a total content of the organic compounds having a CLogP value higher than 6.5 is 0.01 mass ppt to 10 mass ppb with respect to the total mass of the chemical liquid.

10. The chemical liquid according to claim 1 ,
wherein the organic impurity contains a high-boiling-point component having a boiling point equal to or higher than 270° C., and
a total content of the high-boiling-point component in the chemical liquid is 0.01 mass ppt to 60 mass ppm with respect to the total mass of the chemical liquid.

11. The chemical liquid according to claim 10 ,
wherein the high-boiling-point component contains an ultrahigh-boiling-point component having a boiling point equal to or higher than 300° C., and
a total content of the ultrahigh-boiling-point component in the chemical liquid is 0.01 mass ppt to 30 mass ppm with respect to the total mass of the chemical liquid.

12. The chemical liquid according to claim 11 ,
wherein the total content of the ultrahigh-boiling-point component in the chemical liquid is 0.01 mass ppt to 10 mass ppb with respect to the total mass of the chemical liquid.

13. The chemical liquid according to claim 1 ,
wherein in a case where the chemical liquid contains one kind of the organic impurity, a content of the organic impurity is 0.01 mass ppt to 10 mass ppb with respect to the total mass of the chemical liquid, and
in a case where the chemical liquid contains two or more kinds of the organic impurities, a content of the organic impurities is 0.01 mass ppt to 10 mass ppb with respect to the total mass of the chemical liquid.

14. The chemical liquid according to claim 1 that is used for pre-wetting.

15. A chemical liquid comprising:
a mixture of two or more kinds of organic solvents;
at least one kind or more of an organic impurity; and
an impurity metal of Pb,
wherein a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt,
the at least one kind or more of the organic impurity contains at least one kind or more of an organic compound which has a boiling point equal to or higher than 250° C. and contains 8 or more carbon atoms, and
the chemical liquid satisfies at least any one of the following conditions 1 to 7,
condition 1: the mixture contains at least one kind of organic solvent selected from the following first organic solvents and at least one kind of organic solvent selected from the following second organic solvents,
condition 2: the mixture contains at least one kind of organic solvent selected from the following first organic solvents and at least one kind of organic solvent selected from the following third organic solvents,
condition 3: the mixture contains at least one kind of organic solvent selected from the following second organic solvents and at least one kind of organic solvent selected from the following third organic solvents,
condition 4: the mixture contains at least one kind of organic solvent selected from the following first organic solvents, at least one kind of organic solvent selected from the following second organic solvents, and at least one kind of organic solvent selected from the following third organic solvents,
condition 5: the mixture contains at least one kind of organic solvent selected from the following first organic solvents, the following second organic solvents, and the following third organic solvents and at least one kind of organic solvent selected from the following fourth organic solvents,
condition 6: the mixture contains two or more kinds of organic solvents selected from the following fourth organic solvents,
condition 7: the mixture contains at least one kind of organic solvent selected from the following first organic solvents, the following second organic solvents, and the following third organic solvents and the following fifth organic solvent,
first organic solvents: propylene glycol monomethyl ether, cyclopentanone, and butyl acetate,
second organic solvents: propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, 2-hydroxymethyl isobutyrate, and cyclopentanone dimethyl acetal,
third organic solvents: γ-butyrolactone, dimethyl sulfoxide, ethylene carbonate, propylene carbonate, and 1-methyl-2-pyrrolidone,
fourth organic solvents: isoamyl acetate, methyl isobutyl carbinol, diethylene glycol monomethyl ether, dimethyl ether, diethyl ether, diethylene glycol monoisobutyl ether, diglyme, diethylene glycol diethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, diethylene glycol monobutyl ether, anisole, 1,4-dimethoxybenzene, 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, 1,4-diphenoxybenzene, 4-methoxytoluene, and phenetole,
fifth organic solvent: 3-methoxymethyl propionate.

16. The chemical liquid according to claim 15 , wherein the first organic solvent comprises cyclopentanone, the second organic solvents comprise 2-hydroxymethyl isobutyrate and cyclopentanone dimethyl acetal, the third organic solvents comprise dimethyl sulfoxide and ethylene carbonate, the fourth organic solvents comprise isoamyl acetate, methyl isobutyl carbinol, dimethyl ether, diethyl ether, diethylene glycol monoisobutyl ether, diglyme, diethylene glycol diethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, triethy

Assignees

• Fujifilm Corp

Inventors

• Kamimura Tetsuya
• Takahashi Satomi

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/0048 Primary

  characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

• B65D85/70

  for materials not otherwise provided for · CPC title

• G03F7/0012

  Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title