Chemical for photolithography with improved liquid transfer property and resist composition comprising the same

Patent metadata

Field	Value
Publication number	US-2016306278-A1
Application number	US-201615087637-A
Country	US
Kind code	A1
Filing date	Mar 31, 2016
Priority date	Apr 20, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

A chemical for photolithography to uniformly form a thick film to a desired thickness while enhancing a liquid transfer property by lowering the viscosity of a composition for photolithography, and a resist composition including the same. The chemical includes a solvent having a saturated vapor pressure and viscosity within predetermined ranges, and a resin is formed as a film having a thickness of 5 μm or more through spin coating.

First claim

What is claimed is:

1 . A chemical for photolithography coated through spin coating, comprising a resin ingredient having a mass-average molecular weight (Mw) of 2000 to 50000 and an organic solvent having a saturated vapor pressure of 1 kPa or more (1 atm, 20° C.) and a viscosity of 1.1 cP (1 atm, 20° C.) or less.

2 . The chemical according to claim 1 , wherein a thickness of a film coated through the spin coating is 5 μm or more and 20 μm or less.

3 . The chemical according to claim 1 or 2 , wherein a viscosity of the chemical is 130 cP (1 atm, 20° C.) or less.

4 . The chemical according to claim 1 or 2 , wherein the organic solvent is selected from the group consisting of an aromatic solvent, halogenated aromatic solvent, ketone-based solvent and ester based solvent.

5 . The chemical according to claim 4 , wherein the organic solvent is an ester-based solvent.

6 . The chemical according to claim 5 , wherein the organic solvent is butyl acetate.

7 . The chemical according to claim 1 or 2 , wherein the resin ingredient is a polyhydroxystyrene resin, and the chemical is exposed to KrF excimer laser beams.

8 . A photolithographed film formed to a thickness of 5 μm or more and 20 μm or less by coating the chemical for photolithography according to claim 1 or 2 on a substrate.

9 . A resist composition coated through spin coating, comprising:
a resin ingredient having a mass-average molecular weight (Mw) of 2000 to 50000; an organic solvent having a saturated vapor pressure of 1 kPa or more (1 atm, 20° C.) and a viscosity of 1.1 cP (1 atm, 20° C.) or less; and an acid generator.

10 . The resist composition according to claim 9 , wherein a thickness of a film coated through the spin coating is 5 μm or more and 20 μm or less.

11 . The resist composition according to claim 9 or 10 , wherein a viscosity of the composition is 130 cP (1 atm, 20° C.) or less.

12 . The resist composition according to claim 9 or 10 , wherein the organic solvent is selected from the group consisting of an aromatic solvent, halogenated aromatic solvent, ketone-based solvent and ester-based solvent.

13 . The resist composition according to claim 12 , wherein the organic solvent is an ester-based solvent.

14 . The resist composition according to claim 13 , wherein the organic solvent is butyl acetate.

15 . The resist composition according to claim 9 or 10 , wherein the resin ingredient is a polyhydroxystyrene resin, and the composition is exposed to KrF excimer laser beams.

16 . A resist film formed to a thickness of 5 μm or more and 20 μm or less by coating the resist composition according to claim 9 or 10 on a substrate.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Yonemura Koji
• Someya Yasuo
• Yoon Deuk Young

Classifications

• G03F7/039 Primary

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/162

  Coating on a rotating support, e.g. using a whirler or a spinner · CPC title

• G03F7/0048

  characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title