PECVD apparatus for in-situ deposition of film stacks

Patent metadata

Field	Value
Publication number	US-11746420-B2
Application number	US-201816235593-A
Country	US
Kind code	B2
Filing date	Dec 28, 2018
Priority date	Mar 25, 2010
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

First claim

The invention claimed is:

1. A plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, the apparatus comprising: a process station configured for deposition of a first and second films on the substrate, the first and second films having qualitatively different chemical compositions, wherein the process station comprises a substrate support for holding the substrate during the film depositions, and a gas inlet for introduction of a first reactant mixture gas used in the deposition of the first film, and of a second reactant mixture gas used in the deposition of the second film; a plasma source configured to supply a plasma to the process station; and a process station reactant feed fluidically coupled to the gas inlet of the process station, wherein the process station reactant feed is configured to supply, via a shared delivery path, an inert gas, a first reactant mixture gas, and a second reactant mixture gas to the process station, wherein the process station reactant feed is further fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line, such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed; and a controller comprising program instructions configured to deposit the first and the second films on the substrate, the first and second films having qualitatively different chemical compositions, such that there is no vacuum break between the film deposition phases, wherein the program instructions comprise program instructions for supplying via the shared delivery path, the inert gas, the first reactant mixture gas, and the second reactant mixture gas to the process station.

2. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the process station reactant feed is fluidically coupled to the inert gas delivery line via an inert gas delivery valve, to the first reactant mixture gas delivery line via a first reactant mixture gas delivery valve, and to the second reactant mixture delivery line via a second reactant mixture gas delivery valve.

3. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the apparatus comprises a plurality of the process stations and a plurality of the process station reactant feeds, wherein each of the process station reactant feeds is fluidically coupled to the gas inlet of its dedicated process station.

4. The plasma-enhanced chemical vapor deposition apparatus of claim 3 , wherein the apparatus comprises four process stations and four process station reactant feeds, wherein each process station is fluidically coupled to its dedicated process station reactant feed.

5. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the apparatus further comprises a mixing vessel fluidically coupled with the first reactant mixture gas delivery line upstream from a point of entry into the process station reactant feed.

6. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the apparatus further comprises a first mixing vessel fluidically coupled with the first reactant mixture gas delivery line and a second mixing vessel fluidically coupled with the second reactant gas mixture delivery line, wherein both mixing vessels are located upstream from their respective points of entry into the process station reactant feed.

7. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the plasma source comprises both high frequency (HF) and low frequency (LF) plasma generators.

8. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the substrate support is configured to be moveable in a vertical direction.

9. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the first film is silicon nitride and the second film is silicon oxide.

10. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the first reactant mixture gas delivery line is fluidically connected to a source of silane and a source of ammonia.

11. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the second reactant mixture gas delivery line is fluidically connected to a source of tetraethylorthosilicate (TEOS) and a source of oxygen.

12. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the inert gas delivery line is fluidically connected to a source of an inert gas selected from the group consisting of argon, helium, and nitrogen.

13. The plasma-enhanced chemical vapor deposition apparatus of claim 1 , wherein the gas inlet of the process station comprises a showerhead.

Assignees

• Novellus Systems Inc

Inventors

• Subramonium Pramod
• Womack Joseph L
• Niu Dong
• Fox Keith

Classifications

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P72/0466

  characterised by the construction of the load-lock chamber · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6903

  containing silicon · CPC title