Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime

Patent metadata

Field	Value
Publication number	US-10428426-B2
Application number	US-201715494186-A
Country	US
Kind code	B2
Filing date	Apr 21, 2017
Priority date	Apr 22, 2016
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

First claim

What is claimed is:

1. A twin-chamber deposition system, comprising: a pair of processing chambers; a first remote plasma system in selective fluid communication with a showerhead disposed within each of the processing chambers, the first remote plasma system comprising two remote plasma chambers that are each configured exclusively for a respective one of the pair of processing chambers; and a second remote plasma system in selective fluid communication with each of the pair of processing chambers, wherein the first remote plasma system is configured for deposition precursors and the second remote plasma system is configured for cleaning precursors.

2. The twin-chamber deposition system of claim 1 , further comprising a pedestal and a plasma distribution ring in each processing chamber, wherein each plasma distribution ring is positioned between each showerhead and each pedestal, the first remote plasma system delivers radicals to each showerhead, and the second remote plasma system delivers radicals to each plasma distribution ring.

3. The system of claim 2 , wherein the plasma distribution ring comprises a plurality of openings formed on an inside diameter thereof.

4. The system of claim 3 , wherein openings in the plasma distribution ring include a size that is asymmetrical about the inside diameter thereof.

5. The system of claim 3 , wherein a portion of the openings adjacent to an inlet of the plasma distribution ring have a diameter that is less than a diameter of openings spaced-away from the inlet.

6. The system of claim 1 , further comprising a valve system that selectively isolates the second remote plasma system from the first remote plasma system.

7. The system of claim 1 , further comprising a splitter coupled between the second remote plasma system and the plasma distribution rings in each of the processing chambers.

8. The system of claim 1 , further comprising a plurality of conduits disposed between a body of the processing chambers and one or both of the first remote plasma system and the second remote plasma system, wherein the conduits include coolant channels formed therein or thereon.

9. The system of claim 1 , wherein the showerhead comprises a dual channel showerhead.

10. A twin chamber system, comprising: a first remote plasma chamber coupled to and configured exclusively for a first processing region of the twin chamber system; a second remote plasma chamber coupled to and configured exclusively for a second processing region of the twin chamber system; and a third remote plasma chamber shared by the first processing region and the second processing region, wherein the first and second remote plasma chambers are configured for deposition precursors and the third remote plasma chamber is configured for cleaning precursors.

11. The system of claim 10 , wherein the third remote plasma chamber is in fluid communication with a plasma distribution ring disposed in each of the first and second processing regions.

12. The system of claim 11 , wherein the plasma distribution ring comprises a plurality of openings formed on an inside diameter thereof.

13. The system of claim 12 , wherein the openings in the plasma distribution ring include a size that is asymmetrical about the inside diameter thereof.

14. The system of claim 12 , wherein a portion of the openings adjacent to an inlet of the plasma distribution ring have a diameter that is less than a diameter of openings spaced-away from the inlet.

15. The system of claim 10 , further comprising a splitter coupled between the third remote plasma chamber and a plasma distribution ring in each of the processing regions.

16. The system of claim 10 , further comprising a plurality of conduits disposed between a body of the twin chamber system and the first, the second and the third remote plasma chambers, wherein the conduits include coolant channels formed therein or thereon.

17. A twin-chamber deposition system, comprising: a pair of processing chambers; a first remote plasma system in selective fluid communication with a showerhead disposed within each of the processing chambers, the first remote plasma system comprising two remote plasma chambers that are configured exclusively for a respective one of the pair of processing chambers; and a second remote plasma system in selective fluid communication with a plasma distribution ring disposed in each of the pair of processing chambers, wherein the first remote plasma system is configured for delivering deposition precursors through the showerhead and the second remote plasma system is configured for delivering cleaning precursors through the respective plasma distribution rings.

18. The system of claim 17 , wherein the plasma distribution rings are positioned between a respective showerhead and a respective pedestal within each of the processing chambers.

19. The system of claim 17 , further comprising a splitter coupled between the second remote plasma system and the plasma distribution rings in each of the processing chambers.

20. The system of claim 17 , wherein the plasma distribution ring comprises a plurality of openings formed on an inside diameter thereof, and a size of the plurality of openings is asymmetrical about the inside diameter thereof.

Assignees

• Applied Materials Inc

Inventors

• Raj Daemian
• Ma Ying
• Li Dongqing
• Pinson Ii Jay D

Classifications

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/4405

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• H01J37/32899

  Multiple chambers, e.g. cluster tools · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title