Molybdenum compound and method of manufacturing integrated circuit device using the same

Patent metadata

Field	Value
Publication number	US-11746121-B2
Application number	US-202017072096-A
Country	US
Kind code	B2
Filing date	Oct 16, 2020
Priority date	Mar 25, 2020
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

First claim

What is claimed is:

1. A molybdenum compound represented by the following General Formula (I):

wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently a C1 to C12 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, or a halogen atom.

2. The molybdenum compound as claimed in claim 1 , wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently a C1 to C8 linear alkyl group or a C1 to C8 branched alkyl group.

3. The molybdenum compound as claimed in claim 1 , wherein each of R 4 and R 6 is a methyl group.

4. The molybdenum compound as claimed in claim 1 , wherein R 1 , R 2 , R 3 , and R 5 are each independently a branched alkyl group.

5. The molybdenum compound as claimed in claim 1 , wherein R 1 , R 2 , R 3 , and R 5 are each independently an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a neopentyl group.

6. The molybdenum compound as claimed in claim 1 , wherein at least one of R 4 and R 6 is a halogen atom.

7. The molybdenum compound as claimed in claim 1 , wherein:
one of R 4 and R 6 is a halogen atom, and
the other one of R 4 and R 6 is a C1 to C8 linear alkyl group or a C1 to C8 branched alkyl group.

8. The molybdenum compound as claimed in claim 1 , wherein:
at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is a halogen atom, and
the halogen atom is fluorine (F) or chlorine (Cl).

9. The molybdenum compound as claimed in claim 1 , wherein:
R 1 , R 2 , R 3 , and R 5 are each independently a C1 to C8 branched alkyl group, and
R 4 and R 6 are each independently a C1 to C8 linear alkyl group or a halogen atom.

10. The molybdenum compound as claimed in claim 1 , wherein the molybdenum compound is a liquid at about 20° C. to about 28° C.

11. A method of manufacturing an integrated circuit device, the method comprising forming a molybdenum-containing film on a substrate using a molybdenum compound represented by the following General Formula (I):

wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently a C1 to C12 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, or a halogen atom.

12. The method as claimed in claim 11 , wherein the molybdenum compound is a liquid at about 20° C. to about 28° C.

13. The method as claimed in claim 11 , wherein:
R 1 , R 2 , R 3 , and R 5 are each independently a C1 to C8 branched alkyl group, and
R 4 and R 6 are each independently a C1 to C8 linear alkyl group or a halogen atom.

14. The method as claimed in claim 11 , wherein forming the molybdenum-containing film includes supplying the molybdenum compound alone onto the substrate.

15. The method as claimed in claim 11 , wherein forming the molybdenum-containing film includes supplying a multi-component source onto the substrate, the multi-component source including a mixture of the molybdenum compound and at least one of a precursor compound, a reactive gas, and an organic solvent, the precursor compound including a metal that is different from molybdenum.

16. The method as claimed in claim 15 , wherein the reactive gas includes NH 3 , N 2 plasma, a mono-alkyl amine, a di-alkylamine, a tri-alkylamine, an organic amine compound, a hydrazine compound, or a combination thereof.

17. The method as claimed in claim 15 , wherein the reactive gas includes O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, N 2 O, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, and a combination thereof.

18. The method as claimed in claim 15 , wherein the reactive gas includes H 2 .

19. The method as claimed in claim 11 , wherein forming the molybdenum-containing film includes:
vaporizing a source gas including the molybdenum compound;
forming a molybdenum source-adsorbed layer on the substrate by supplying the vaporized source gas onto the substrate; and
supplying a reactive gas onto the molybdenum source-adsorbed layer.

20. The method as claimed in claim 11 , wherein the molybdenum-containing film includes a molybdenum film, a molybdenum oxide film, or a molybdenum nitride film.

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Park Gyuhee
• Cho Younjoung
• Sato Haruyoshi
• Harano Kazuki
• Uchiuzou Hiroyuki

Classifications

• H10W74/40

  characterised by their materials · CPC title

• C07F11/00 Primary

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title

• C01B21/062 Primary

  with chromium, molybdenum or tungsten · CPC title

• C01G39/02

  Oxides; Hydroxides · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title