Component assemblies and embedding for high density electronics

Patent metadata

Field	Value
Publication number	US-11744018-B2
Application number	US-202117147908-A
Country	US
Kind code	B2
Filing date	Jan 13, 2021
Priority date	Jan 17, 2020
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

Provided is a high-density multi-component package comprising a first module interconnect pad and a second module interconnect pad. At least two electronic components are mounted to and between the first module interconnect pad and the second module interconnect pad wherein a first electronic component is vertically oriented relative to the first module interconnect pad. A second electronic component is vertically oriented relative to the second module interconnect pad.

First claim

The invention claimed is:

1. A high-density multi-component package comprising:
a first module interconnect pad; and
a second module interconnect pad;
an array of electronic components mounted to and between said first module interconnect pad and said second module interconnect pad wherein a first electronic component of said electronic components is vertically oriented relative to said first module interconnect pad and a second electronic component of said electronic components is vertically oriented relative to said second module interconnect pad;
wherein said first electronic component and said second electronic component are first adjacent electronic components wherein said first electronic component and said second electronic component have opposite polarity; and
a positive connector tab in electrical connection with adjacent external terminations having positive polarity.

2. The high-density multi-component package of claim 1 wherein at least one said electronic component of said electronic components comprises internal electrodes wherein said internal electrodes are perpendicular to said module interconnect pad.

3. The high-density multi-component package of claim 1 wherein at least one said electronic component of said electronic components comprises external terminations with each external termination of said external terminations comprising an edge surface and side surfaces wherein one said edge surface is mounted to said first module interconnect pad.

4. The high-density multi-component package of claim 1 further comprising a wide band gap-semiconductor device wherein said first interconnect pad and said second interconnect pad are integral to said wide band gap-semiconductor device.

5. The high-density multi-component package of claim 1 wherein said first electronic component is a first multilayered ceramic capacitor and said second electronic component is a second multilayered ceramic capacitor.

6. The high-density multi-component package of claim 1 wherein said electrical components are mounted using a transient liquid phase sintering adhesive.

7. The high-density multi-component package of claim 1 further comprising component terminations wherein said component terminations contain a compliant flexible termination.

8. The high-density multi-component package of claim 1 further comprising an electrically conducting portion received in a recess of an electrically insulating portion.

9. The high-density multi-component package of claim 1 wherein at least one said electronic component is a multilayered ceramic capacitor.

10. The high-density multi-component package of claim 1 further comprising at least one cooling component.

11. The high-density multi-component package of claim 1 further comprising at least one electrically insulated restraint arranged to secure said first module interconnect pad and said second module interconnect pad in a fixed position relative to each other.

12. The high-density multi-component package of claim 6 wherein said transient liquid phase sintering adhesive comprises copper and tin.

13. The high-density multi-component package of claim 8 wherein at least one said electronic component is embed within said electrically insulating portion.

14. The high-density multi-component package of claim 9 wherein adjacent electronic components are multilayered ceramic capacitors having opposite polarity.

15. The high-density multi-component package of claim 10 wherein said cooling component is between said first module interconnect pad and said second module interconnect pad.

16. The high-density multi-component package of claim 10 wherein said cooling component is a cooling channel.

17. The high-density multi-component package of claim 10 wherein said cooling component comprises a thermal conductor.

18. A high-density multi-component package comprising:
an array of electronic components comprising a first electronic component of said electronic components and a second electronic component of said electronic components;
wherein said first electronic component and said second electronic component are adjacent and each comprises a first external termination and a second external termination wherein each said first external termination and each said second external termination comprises an edge surface and side surfaces;
wherein adjacent said electronic components are opposite polarity; and
a wide band-gap semiconductor device comprising a first interconnect pad and a second interconnect pad wherein said first interconnect pad is electrically connected to said edge surface of said first external termination and said second interconnect pad is electrically connected to said edge surface of said second electronic component.

19. The high-density multi-component package of claim 18 wherein said first interconnect pad is directly electrically connected to said edge surface of said first external termination and said second interconnect pad is directly electrically connected to said edge surface of said second electronic component.

20. The high-density multi-component package of claim 18 wherein said first electronic component comprises internal electrodes.

21. The high-density multi-component package of claim 18 further comprising a substrate between said wide band-gap semiconductor device and said first electronic component wherein said substrate comprises an electrically insulating portion and an electrically conducting portion.

22. The high-density multi-component package of claim 18 wherein said first interconnect pad is in direct electrical contact with said first external termination.

23. The high-density multi-component package of claim 18 wherein at least one of said first electronic component or said second electronic component is a multilayered ceramic capacitor.

24. The high-density multi-component package of claim 18 further comprising a substrate opposite said wide band-gap device wherein said substrate comprises a conductive portion in electrical contact with said edge of said second external termination of said first electronic component.

25. The high-density multi-component package of claim 18 wherein said wide band-gap device is selected from a SiC and a GaN based device.

26. The high-density multi-component package of claim 18 further comprising at least one cooling component.

27. The high-density multi-component package of claim 20 wherein said first internal electrodes are perpendicular to said interconnect pad.

28. The high-density multi-component package of claim 21 wherein said electrically conducting portion is a via through said electrically insulating portion.

29. The high-density multi-component package of claim 25 further comprising a silicon based semiconductor.

30. The high-density multi-component package of claim 26 wherein said cooling component is between said first interconnect pad and said second interconnect pad.

31. The high-density multi-component package of claim 26 wherein said cooling component is a cooling channel.

32. The high-density multi-component package of claim 28 wherein said via is a pre-formed via.

33. The high-density multi-component package of claim 31 wherein said cooling component comprises a thermal conductor.

34. A method for for

Assignees

• Kemet Electronics Corp

Inventors

• Bultitude John
• Blais Peter Alexandre
• Burk James A
• Miller Galen W
• Hayes Hunter
• Templeton Allen
• Jones Lonnie G
• Laps Mark R

Classifications

• H10W90/00

  Package configurations · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H05K1/181 Primary

  associated with surface mounted components · CPC title

• H01G4/38 Primary

  Multiple capacitors, i.e. structural combinations of fixed capacitors · CPC title