Semiconductor module

Patent metadata

Field	Value
Publication number	US-10325895-B2
Application number	US-201715459982-A
Country	US
Kind code	B2
Filing date	Mar 15, 2017
Priority date	Sep 27, 2016
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

It is an object of the present invention to provide a semiconductor module in which a bonded portion has high reliability, and that has a small area. A semiconductor module includes a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction, at least one switching element, and at least one circuit element. The at least one switching element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. The at least one circuit element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. Disposed between the plurality of metal plates is an insulating material. At least one of the plurality of metal plates is bonded to the at least one switching element and the at least one circuit element.

First claim

What is claimed is:

1. A semiconductor module comprising:
a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction;
at least one switching element; and
at least one circuit element, wherein
said at least one switching element is bonded between two of said plurality of metal plates, facing each other in a vertical direction,
said at least one circuit element is bonded between two of said plurality of metal plates, facing each other in a vertical direction,
an insulating material is disposed between said plurality of metal plates, and
at least one of said plurality of metal plates is bonded to said switching element and said circuit element.

2. The semiconductor module according to claim 1 , wherein
an insulating substrate is disposed between two of said plurality of metal plates, facing each other, said insulating substrate being said insulating material, and
said at least one circuit element is bonded between said two metal plates facing each other in a vertical direction in such a manner that said at least one circuit element extends through said insulating substrate.

3. The semiconductor module according to claim 1 , wherein
an insulating resin is disposed between two of said plurality of metal plates, facing each other, said insulating resin being said insulating material, and
said at least one circuit element is bonded between said two metal plates facing each other in a vertical direction, and is sealed by said insulating resin.

4. The semiconductor module according to claim 1 , wherein
said at least one circuit element comprises a plurality of circuit elements,
an insulating substrate is disposed between two of said plurality of metal plates, facing each other in a vertical direction, said insulating substrate being said insulating material,
said at least one of said plurality of circuit elements is bonded between said two metal plates facing each other in such a manner that said at least one circuit element extends through said insulating substrate,
an insulating resin is disposed between two of said plurality of metal plates, facing each other in a vertical direction, said insulating resin being said insulating material, and
said at least one of said plurality of circuit elements is bonded between said two metal plates facing each other, and is sealed by said insulating resin.

5. The semiconductor module according to claim 1 , wherein
said at least one circuit element comprises a plurality of circuit elements, and
said plurality of circuit elements connected in series are bonded between two of said plurality of metal plates, facing each other in a vertical direction.

6. The semiconductor module according to claim 1 , wherein
said at least one switching element comprises electrodes on both surfaces,
said electrodes on both surfaces of said at least one switching element are bonded, in a face-to-face manner, to respective two of said plurality of metal plates, facing each other in a vertical direction, through a conductive bonding material,
said at least one circuit element comprises electrodes at both ends, and
said electrodes at both ends of said at least one circuit element are bonded, in a face-to-face manner, to respective two of said plurality of metal plates, facing each other in a vertical direction, through a conductive bonding material.

7. The semiconductor module according claim 1 , further comprising
a snubber circuit configured to prevent a surge voltage caused by a switching operation of said at least one switching element, wherein
said snubber circuit comprises a part of said plurality of metal plates and said at least one circuit element.

8. The semiconductor module according to claim 1 , wherein
said at least one circuit element comprises a passive element, and
said passive element is a capacitor or a resistor element.

9. The semiconductor module according to claim 1 , wherein each of said plurality of metal plates has a thickness of 0.25 mm or greater.

10. The semiconductor module according to claim 2 , wherein
said insulating substrate contains a ceramic material, and
said insulating substrate has a thickness of 0.32 mm or greater.

11. The semiconductor module according to claim 4 , wherein
said insulating substrate contains a ceramic material, and
said insulating substrate has a thickness of 032 mm or greater.

12. The semiconductor module according to claim 3 , wherein said insulating resin has a thickness of 0.1 mm or greater.

13. The semiconductor module according to claim 4 , wherein said insulating resin has a thickness of 0.1 mm or greater.

14. The semiconductor module according to claim 1 , wherein said at least one switching element is an IGBT.

15. The semiconductor module according to claim 1 , wherein said at least one switching element is a MOSFET.

16. The semiconductor module according to claim 14 , wherein said at least one switching element contains silicon carbide.

17. The semiconductor module according to claim 15 , wherein said at least one switching element contains silicon carbide.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakahara Kenta

Classifications

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W90/769

  between a chip and a laterally-adjacent discrete passive device · CPC title

• H10W90/764

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/738

  between a chip and a stacked discrete passive device · CPC title