Uniform in situ cleaning and deposition

Patent metadata

Field	Value
Publication number	US-11742185-B2
Application number	US-202117213947-A
Country	US
Kind code	B2
Filing date	Mar 26, 2021
Priority date	Mar 26, 2021
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

First claim

What is claimed is:

1. A semiconductor processing system, comprising:
an output manifold that defines a central aperture and at least one gas outlet disposed radially outward of the central aperture;
a gasbox disposed beneath the output manifold, the gasbox comprising an inlet side facing the output manifold and an outlet side opposite the inlet side, the gasbox comprising an inner wall that defines a central fluid lumen that is aligned and in fluid communication with the central aperture of the output manifold, wherein:
the inner wall tapers outward from the inlet side to the outlet side;
the at least one gas outlet is disposed radially outward of a top of the central fluid lumen;
the inlet side of the gasbox defines a recess that extends radially outward to at least the at least one gas outlet and provides a volume that fluidly couples the at least one gas outlet and the central fluid lumen; and
a bottom of the recess defines a ledge that extends to an outer edge of the top of the central fluid lumen;

an annular spacer disposed below the gasbox, wherein an inner diameter of the annular spacer is greater than a largest inner diameter of the central fluid lumen; and
a faceplate disposed beneath the annular spacer, the faceplate defining a plurality of apertures extending through a thickness of the faceplate.

2. The semiconductor processing system of claim 1 , wherein:
the output manifold defines a recursive flow path that fluidly couples one or more gas inlets with the at least one gas outlet; and
a number of the at least one gas outlet is greater than a number of the one or more gas inlets.

3. The semiconductor processing system of claim 1 , further comprising:
a tapered insert disposed within the annular spacer, the tapered insert tapering outward from the outlet side of the gasbox to a radial position that is beyond the plurality of apertures.

4. The semiconductor processing system of claim 1 , wherein:
an inner diameter of the annular spacer is positioned radially outward of the plurality of apertures.

5. The semiconductor processing system of claim 1 , further comprising:
a remote plasma source that defines an outlet, the outlet being fluidly coupled with an inlet of the output manifold.

6. A semiconductor processing system, comprising:
a remote plasma source defining at least one outlet;
an output manifold that defines a central aperture, at least one inlet, and at least one gas outlet, the at least one inlet being fluidly coupled with the at least one outlet of the remote plasma source, the at least one gas outlet being disposed radially outward of the central aperture;
a gasbox disposed beneath the output manifold, the gasbox comprising an inlet side facing the output manifold and an outlet side opposite the inlet side, the gasbox comprising an inner wall that defines a central fluid lumen that is aligned and in fluid communication with the central aperture of the output manifold, wherein:
the inner wall tapers outward from the inlet side to the outlet side;
the at least one gas outlet is disposed radially outward of a top of the central fluid lumen;
the inlet side of the gasbox defines a recess that extends radially outward to at least the at least one gas outlet and provides a volume that fluidly couples the at least one gas outlet and the central fluid lumen; and
a bottom of the recess defines a ledge that extends to an outer edge of the top of the central fluid lumen; and

a faceplate disposed beneath the gasbox, the faceplate defining a plurality of apertures extending through a thickness of the faceplate.

7. The semiconductor processing system of claim 6 , wherein:
a degree of taper of the inner wall of the central fluid lumen is constant along a length of the central fluid lumen.

8. The semiconductor processing system of claim 6 , wherein:
a degree of taper of the inner wall of the central fluid lumen varies along a length of the central fluid lumen.

9. The semiconductor processing system of claim 6 , wherein:
the output manifold defines a recursive flow path that fluidly couples the at least one gas inlet with the at least one gas outlet.

Assignees

• Applied Materials Inc

Inventors

• Rathi Saket
• Nguyen Tuan A
• Bansal Amit
• Zhang Yuxing
• Ramamurthi Badri N
• Pathak Nitin
• Khaja Abdul Aziz
• Bobek Sarah Michelle

Classifications

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• C23C16/452

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title

• C23C16/45565

  Shower nozzles · CPC title