Method and apparatus for deposition of metal nitrides

Patent metadata

Field	Value
Publication number	US-11739418-B2
Application number	US-202016823182-A
Country	US
Kind code	B2
Filing date	Mar 18, 2020
Priority date	Mar 22, 2019
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

First claim

What is claimed is:

1. A method of forming a structure including a metal nitride layer on a workpiece, comprising:
before placing the workpiece in a chamber that includes a niobium target, pre-conditioning the chamber by flowing nitrogen gas and an inert gas at a first flow rate ratio of nitrogen gas to inert gas into the chamber and igniting a first plasma in the chamber while the nitrogen gas and the inert gas are flowing at the first flow rate ratio;
after the preconditioning, evacuating the chamber;
after the preconditioning, placing the workpiece on a workpiece support in the chamber; and
performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio of nitrogen gas to inert gas into the chamber and igniting a second plasma in the chamber while the nitrogen gas and the inert gas are flowing at the second flow rate ratio, wherein the second flow rate ratio is less than the first flow rate ratio such that a critical temperature of a resulting niobium nitride layer is increased as compared to the second flow rate ratio being greater than the first flow rate ratio, and wherein the second flow rate ratio comprises less nitrogen gas than the first flow rate ratio, and wherein the second flow rate ratio is sufficient that the resulting niobium nitride layer having the critical temperature of at least 9.7 Kelvin is deposited on the workpiece.

2. The method of claim 1 , wherein the niobium target comprises a niobium alloy and the niobium nitride layer comprises a niobium alloy nitride.

3. The method of claim 1 , wherein the second flow rate ratio comprises 2-30% less nitrogen than the first flow rate ratio.

4. The method of claim 1 , wherein the first flow rate ratio of nitrogen gas to inert gas is 4:100 to 1:1, and the second flow rate ratio of nitrogen gas to inert gas is 3:100 to 48:52.

5. The method of claim 1 , wherein pre-conditioning the chamber comprises placing a shutter disk on the workpiece support.

6. The method of claim 5 , wherein pre-conditioning comprises heating the shutter disk to a temperature and performing a physical vapor deposition comprises heating the workpiece to the temperature of the shutter disk.

7. The method of claim 6 , wherein the temperature is 200-500° C.

8. The method of claim 6 , wherein igniting plasma in preconditioning and igniting plasma in physical vapor deposition uses a same power level.

9. The method of claim 1 , comprising measuring a nitrogen ion concentration in the second plasma with an optical sensor.

10. The method of claim 9 , comprising controlling a flow rate of the nitrogen gas and/or the inert gas in response to a nitrogen ion concentration measured by the sensor to bring the nitrogen ion concentration to a desired concentration.

11. The method of claim 1 , wherein the second flow rate ratio is less than the first flow rate ratio so as to induce a critical temperature hysteresis effect.

12. A physical vapor deposition system, comprising:
chamber walls forming a chamber;
a support to hold a workpiece in the chamber;
a vacuum pump to evacuate the chamber;
a gas source to deliver nitrogen gas and an inert gas to the chamber;
an electrode supporting a niobium target;
a power source to apply power to the electrode; and
a controller configured to
before a workpiece on which a metal nitride layer is to be deposited is placed in the chamber, cause the gas source to flow nitrogen gas and the inert gas at a first flow rate ratio of nitrogen gas to inert gas into the chamber and cause the power source to apply power sufficient to ignite a first plasma in the chamber to pre-condition the chamber while the nitrogen gas and the inert gas are flowing at the first flow rate ratio,
after the workpiece is placed in the chamber, cause the gas source to flow nitrogen gas and the inert gas at a second flow rate ratio of nitrogen gas to inert gas into the chamber, wherein the second flow rate ratio is less than the first flow rate ratio and comprises less nitrogen gas than the first flow rate ratio, and
cause the power source to apply power sufficient to ignite a second plasma in the chamber while the nitrogen gas and the inert gas are flowing into the chamber at the second flow rate ratio such that the critical temperature of a resulting metal nitride layer is increased as compared to the second flow rate ratio being greater than the first flow rate ratio and to deposit the resulting metal nitride layer having a critical temperature of at least 9.7 Kelvin on the workpiece by physical vapor deposition.

13. The system of claim 12 , comprising an optical sensor to measure at least a nitrogen ion concentration in the second plasma in the chamber.

14. The system of claim 13 , wherein the sensor is positioned outside the chamber, and wherein the chamber walls include a window to provide optical access to the chamber for the sensor.

15. The system of claim 14 , further comprising a sputter shield positioning in the chamber, and wherein the shield has an opening to provide a clear line of sight for the sensor to the second plasma.

16. The system of claim 12 , wherein the second flow rate ratio comprises 2 to 30% less nitrogen gas than the first flow rate ratio.

17. The system of claim 16 , wherein the first flow rate ratio of nitrogen gas to inert gas is 4:100 to 1:1, and the second flow rate ratio of nitrogen gas to inert gas is 3:100 to 48:52.

18. The system of claim 12 , comprising a robot configured to position a shutter disk into the chamber for the pre-condition of the chamber.

19. The system of claim 12 , wherein the niobium target comprises a niobium alloy and the metal nitride layer comprises a niobium alloy nitride.

Assignees

• Applied Materials Inc

Inventors

• Zhu Mingwei
• Yang Zihao
• Patibandla Nag B
• Godet Ludovic
• Cao Yong
• Diehl Daniel Lee
• Chen Zhebo

Classifications

• C23C14/564 Primary

  Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title

• C23C14/0641 Primary

  Nitrides (C23C14/0617 takes precedence) · CPC title

• C23C14/34

  Sputtering · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• H01J37/3441

  Dark space shields · CPC title