Dimensional consistency of miniature loudspeakers

US11729569B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11729569-B2
Application numberUS-201916598618-A
CountryUS
Kind codeB2
Filing dateOct 10, 2019
Priority dateOct 10, 2019
Publication dateAug 15, 2023
Grant dateAug 15, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor wafer has formed within it a plurality of piston tops of equal area. Each of the piston tops includes a thin flat region from which a majority of the thickness of the original semiconductor wafer may have been removed. A first one of the piston tops has a lower thickness than a second one of the piston tops. The second piston top has at least one hole in it, the volume of the hole corresponding to the difference in thickness between the first and second piston tops, such that the masses of the first and second piston tops differ by less than the variation in thickness between them.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus comprising: a semiconductor wafer having formed within it a plurality of piston tops of equal area each of the plurality of piston tops having a mass, each of the piston tops comprising a thin flat region from which a majority of a thickness of the original semiconductor wafer has been removed, wherein a first one of the piston tops has a lower thickness than a second one of the piston tops, and the second piston top has at least one hole in it, a volume of the hole corresponding to a difference in thickness between the first and second piston tops, such that the masses of the first and second piston tops differ by less than a variation in thickness between them, and wherein the hole in the second piston top does not extend through the entire thickness of the second piston top. 2. The apparatus of claim 1 , wherein the first and second piston tops differ in thickness by more than fifty percent (50%), and differ in mass by less than twenty percent (20%). 3. The apparatus of claim 2 , wherein the first and second piston tops differ in thickness by more than one hundred percent (100%). 4. The apparatus of claim 2 , wherein the first and second piston tops differ in mass by less than ten percent (10%). 5. The apparatus of claim 1 , wherein a third one of the piston tops has a greater thickness than the second piston top. 6. The apparatus of claim 5 , wherein the third piston top has a greater number of holes in it than the second piston top, such that the masses of the first, second, and third piston tops differ by less than the variation in thickness between them. 7. The apparatus of claim 5 , wherein the third piston top has at least one hole in it larger than the at least one hole in the second piston top, such that the masses of the first, second, and third piston tops differ by less than the variation in thickness between them. 8. The apparatus of claim 1 , wherein the second piston top is located a greater distance from the center of the wafer than the first piston top. 9. The apparatus of claim 1 , wherein: the thickness of the piston tops varies with each piston tops' distance from the center of the wafer, a plurality of the piston tops each have a plurality of holes in them, and the total volume of the holes in each piston top varies with the piston tops' distances from the center of the wafer, such that the mass of each given piston top differs from the average mass of all the piston tops by less than the variation in thickness between that piston top and the average thickness of all the piston tops.

Assignees

Inventors

Classifications

  • H04R31/003Primary

    for diaphragms or their outer suspension · CPC title

  • Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer · CPC title

  • H04R7/06Primary

    comprising a plurality of sections or layers · CPC title

  • Mounting or tensioning of diaphragms or cones · CPC title

  • Loudspeakers · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11729569B2 cover?
A semiconductor wafer has formed within it a plurality of piston tops of equal area. Each of the piston tops includes a thin flat region from which a majority of the thickness of the original semiconductor wafer may have been removed. A first one of the piston tops has a lower thickness than a second one of the piston tops. The second piston top has at least one hole in it, the volume of the ho…
Who is the assignee on this patent?
Bose Corp
What technology area does this patent fall under?
Primary CPC classification H04R31/003. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 15 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).