Semiconductor manufacturing device

Patent metadata

Field	Value
Publication number	US-11728188-B2
Application number	US-202016941661-A
Country	US
Kind code	B2
Filing date	Jul 29, 2020
Priority date	Aug 23, 2019
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

According to one embodiment, a semiconductor manufacturing device includes a chemical solution preparation tank configured to prepare a solution; a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a substrate; a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

First claim

What is claimed is:

1. A semiconductor manufacturing device comprising:
a chemical solution preparation tank configured to prepare a chemical solution;
a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a semiconductor wafer;
a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and
a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

2. The semiconductor manufacturing device according to claim 1 , further comprising:
a control device configured to control the variable opening valve according to a measurement result of the pressure sensor.

3. The semiconductor manufacturing device according to claim 2 , wherein the control device is further configured to increase the opening of the variable opening valve when the pressure sensor detects an increase in pressure in the chemical solution preparation tank, and is further configured to decrease the opening of the variable opening valve when the pressure sensor detects a decrease in pressure in the chemical solution preparation tank.

4. The semiconductor manufacturing device according to claim 1 , further comprising:
a concentration sensor configured to measure a concentration of the chemical solution, the concentration sensor arranged in the chemical solution preparation tank,
wherein an accuracy of the concentration sensor is affected by the pressure of the chemical solution preparation tank.

5. The semiconductor manufacturing device according to claim 1 , wherein the chemical solution is used to etch the semiconductor wafer or clean the semiconductor wafer in the chamber.

6. The semiconductor manufacturing device according to claim 1 , wherein
the chemical solution is phosphoric acid aqueous solution, and
the chemical solution is used to etch a silicon nitride film formed on the semiconductor wafer in the chamber.

7. A semiconductor manufacturing device comprising:
a chemical solution preparation tank configured to prepare a chemical solution;
a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a semiconductor wafer; and
a pump arranged between the chemical solution preparation tank and an exhaust pipe.

8. The semiconductor manufacturing device according to claim 7 , further comprising:
a control device configured to operate the pump for a predetermined time to lower the pressure of the chemical solution preparation tank to promote evaporation of water from the chemical solution and increase a concentration of the chemical solution.

9. The semiconductor manufacturing device according to claim 7 , further comprising:
a concentration sensor configured to measure a concentration of the chemical solution, the concentration sensor arranged in the chemical solution preparation tank; and
a control device to control an operation of the pump according to a measured result of the concentration sensor.

10. The semiconductor manufacturing device according to claim 9 , wherein the control device operates the pump until the concentration sensor reaches a target concentration to lower the pressure of the chemical solution preparation tank to promote evaporation of water from the chemical solution and increase a concentration of the chemical solution.

11. The semiconductor manufacturing device according to claim 9 , further comprising:
a chemical solution providing device configured to introduce a chemical solution into the chemical solution preparation tank,
wherein the chemical solution providing device introduces deionized water or the chemical solution having a concentration lower than a set concentration when a chemical concentration detected by the concentration sensor is high.

12. The semiconductor manufacturing device according to claim 9 , further comprising:
a heater configured to heat the chemical solution in the chemical solution preparation tank,
wherein the heater heats the chemical solution to promote evaporation of water from the chemical solution and increase a concentration of the chemical solution.

13. The semiconductor manufacturing device according to claim 12 , further comprising:
a temperature sensor configured to measure a temperature of the chemical solution in the chemical solution preparation tank,
wherein the heater heats the chemical solution until the temperature of the chemical solution detected by the temperature sensor reaches a set temperature.

14. The semiconductor manufacturing device according to claim 7 , wherein the chemical solution is used to etch the semiconductor wafer or clean the semiconductor wafer in the chamber.

15. The semiconductor manufacturing device according to claim 7 , wherein the chemical solution is phosphoric acid aqueous solution, the chemical solution is used to etch a silicon nitride film formed on the semiconductor wafer in the chamber.

16. The semiconductor manufacturing device according to claim 7 , further comprising:
a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and
a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

17. The semiconductor manufacturing device according to claim 16 , further comprising:
a control device configured to control the variable opening valve according to a measurement result of the pressure sensor.

18. The semiconductor manufacturing device according to claim 17 , wherein the control device is further configured to increase the opening of the variable opening valve when the pressure sensor detects an increase in pressure in the chemical solution preparation tank, and is further configured to decrease the opening of the variable opening valve when the pressure sensor detects a decrease in pressure in the chemical solution preparation tank.

Assignees

• Kioxia Corp

Inventors

• Hashimoto Yuji
• Muraki Shinsuke
• Yamada Hiroaki

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title