Block family tracking for memory devices

Patent metadata

Field	Value
Publication number	US-11720289-B2
Application number	US-202217722856-A
Country	US
Kind code	B2
Filing date	Apr 18, 2022
Priority date	Apr 21, 2020
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a read command specifying an identifier of a logical block and a page number; translate the identifier of the logical block into a physical address of a physical block stored on the memory device, wherein the physical address comprises an identifier of a memory device die; identify, based on block family metadata associated with the memory device, a block family associated with the physical block and the page number; determine a threshold voltage offset associated with the block family and the memory device die; compute a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device die; and read, using the modified threshold voltage, data from a physical page identified by the page number within the physical block.

First claim

What is claimed is:

1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device to perform operations, comprising:
initializing a block family associated with the memory device;
responsive to determining that no new partitions are available within a current partition group associated with the memory device, creating a new partition group associated with the memory device;
setting a first partition of the new partition group as a current partition;
setting a block family index of the current partition to reference the block family; and
setting an ending page offset of the current partition to reference a page associated with the block family.

2. The system of claim 1 , wherein the block family comprises a plurality of blocks that have been programmed within a specified time window.

3. The system of claim 1 , wherein the block family comprises a plurality of blocks that have been programmed within a specified temperature window.

4. The system of claim 1 , wherein the operations further comprise:
identifying a threshold voltage offset associated with the block family;
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device; and
reading, using the modified threshold voltage, the page.

5. The system of claim 1 , wherein creating the new partition group further comprises:
updating a next group pointer of the current partition group to reference the new partition group.

6. The system of claim 1 , wherein creating the new partition group further comprises:
updating a next group pointer of the new partition group to a null value.

7. The system of claim 1 , wherein initializing the block family is performed responsive to a write operation with respect to the page.

8. A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to perform operations, comprising:
initializing a block family associated with a memory device;
responsive to determining, that no new partitions are available within a current partition group associated with the memory device, creating a new partition group associated with the memory device;
setting a first partition of the new partition group as a current partition;
setting a block family index of the current partition to reference the block family; and
setting an ending page offset of the current partition to reference a page associated with the block family.

9. The computer-readable non-transitory storage medium of claim 8 , wherein the block family comprises a plurality of blocks that have been programmed within a specified time window.

10. The computer-readable non-transitory storage medium of claim 8 , wherein the block family comprises a plurality of blocks that have been programmed within a specified temperature window.

11. The computer-readable non-transitory storage medium of claim 8 , wherein the operations further comprise:
identifying a threshold voltage offset associated with the block family;
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device; and
reading, using the modified threshold voltage, the page.

12. The computer-readable non-transitory storage medium of claim 8 , wherein creating the new partition group further comprises:
updating a next group pointer of the current partition group to reference the new partition group.

13. The computer-readable non-transitory storage medium of claim 8 , wherein creating the new partition group further comprises:
updating a next group pointer of the new partition group to a null value.

14. The computer-readable non-transitory storage medium of claim 8 , wherein initializing the block family is performed responsive to a write operation with respect to the page.

15. A method, comprising:
initializing, by a processing device, a block family associated with a memory device;
responsive to determining, that no new partitions are available within a current partition group associated with the memory device, creating a new partition group associated with the memory device;
setting a first partition of the new partition group as a current partition;
setting a block family index of the current partition to reference the block family; and
setting an ending page offset of the current partition to reference a page associated with the block family.

16. The method of claim 15 , wherein the block family comprises a plurality of blocks that have been programmed within a specified time window.

17. The method of claim 15 , wherein the block family comprises a plurality of blocks that have been programmed within a specified temperature window.

18. The method of claim 15 , further comprising:
identifying a threshold voltage offset associated with the block family;
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device; and
reading, using the modified threshold voltage, the page.

19. The method of claim 15 , wherein creating the new partition group further comprises:
updating a next group pointer of the current partition group to reference the new partition group.

20. The method of claim 15 , wherein creating the new partition group further comprises:
updating a next group pointer of the new partition group to a null value.

Assignees

• Micron Technology Inc

Inventors

• Ish Mark

Classifications

• G06F3/0659 Primary

  Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title

• G06F3/0604

  Improving or facilitating administration, e.g. storage management · CPC title

• G06F3/064

  Management of blocks · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G11C16/26 Primary

  Sensing or reading circuits; Data output circuits · CPC title