Resist composition and pattern forming process

US11720019B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11720019-B2
Application numberUS-202117157011-A
CountryUS
Kind codeB2
Filing dateJan 25, 2021
Priority dateFeb 27, 2020
Publication dateAug 8, 2023
Grant dateAug 8, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A resist composition comprising a quencher containing a sulfonium salt having the formula (A).

First claim

Opening claim text (preview).

The invention claimed is: 1. A resist composition comprising a quencher containing a sulfonium salt having the formula (A): wherein k, m, and n are each independently an integer of 1 to 3, p is 0 or 1, q is an integer of 0 to 4, r is an integer of 1 to 3, X BI is iodine or bromine, R a1 is a C 1 -C 20 (k+1)-valent aliphatic hydrocarbon group which may contain at least one selected from an ether bond, a carbonyl group, an ester bond, an amide bond, a sultone ring, a lactam ring, a carbonate group, a halogen other than iodine, a C 6 -C 12 aryl group, a hydroxyl group, or a carboxyl group, X 1 is a single bond, an ether bond, an ester bond, an amide bond, a carbonyl group, or a carbonate group, X 2 is a single bond or a C 1 -C 20 (m+1)-valent hydrocarbon group which may contain at least one selected from an ether bond, a carbonyl group, an ester bond, an amide bond, a sultone ring, a lactam ring, a carbonate group, a halogen other than iodine, a hydroxyl group, or a carboxyl group, X 3 is a single bond, an ether bond, or an ester bond, R 1 is a single bond or a C 1 -C 20 saturated hydrocarbylene group which may contain an ether bond, an ester bond, or a hydroxyl group, R 2 is a C 1 -C 20 hydrocarbyl group which may contain a heteroatom, two R 2 s may be the same or different, and may bond together to form a ring with a sulfur atom to which the two R 2 s are attached when r=1, R 3 is a hydroxyl group, a carboxyl group, a nitro group, a cyano group, fluorine, chlorine, bromine, iodine, an amino group, or a C 1 -C 20 saturated hydrocarbyl group, C 1 -C 20 saturated hydrocarbyloxy group, C 2 -C 20 saturated hydrocarbylcarbonyloxy group, C 2 -C 20 saturated hydrocarbyloxycarbonyl group, or C 1 -C 4 saturated hydrocarbylsulfonyloxy group which may contain fluorine, chlorine, bromine, iodine, a hydroxyl group, an amino group, or an ether bond, and Xq − is a halide ion, a sulfonic acid anion not having fluorine at an α-position, a carboxylic acid anion, or a sulfonamide anion. 2. The resist composition of claim 1 , further comprising an organic solvent. 3. The resist composition of claim 1 , further comprising an acid generator capable of generating fluorosulfonic acid, fluoroimidic acid, or fluoromethide acid. 4. The resist composition of claim 1 , further comprising a base polymer. 5. The resist composition of claim 4 , wherein the base polymer comprises recurring units having the formula (a1) or recurring units having the formula (a2): wherein R A is each independently hydrogen or a methyl group, Y 1 is a single bond, a phenylene group, a naphthylene group, or a C 1 -C 12 linking group containing at least one selected from an ester bond or a lactone ring, Y 2 is a single bond or an ester bond, Y 3 is a single bond, an ether bond, or an ester bond, R 11 and R 12 are each independently an acid labile group, R 13 is fluorine, a trifluoromethyl group, a cyano group, a C 1 -C 6 saturated hydrocarbyl group, a C 1 -C 6 saturated hydrocarbyloxy group, a C 2 -C 7 saturated hydrocarbylcarbonyl group, a C 2 -C 7 saturated hydrocarbylcarbonyloxy group, or a C 2 -C 7 saturated hydrocarbyloxycarbonyl group, R 14 is a single bond or a C 1 -C 6 alkanediyl group in which some carbon may be replaced by an ether bond or an ester bond, a is 1 or 2, b is an integer of 0 to 4, and 1≤a+b≤5. 6. The resist composition of claim 5 which is a chemically amplified positive resist composition. 7. The resist composition of claim 4 , wherein the base polymer is free of an acid labile group. 8. The resist composition of claim 7 which is a chemically amplified negative resist composition. 9. The resist composition of claim 1 , wherein the base polymer comprises recurring units having any one of the formulae (f1) to (f3): wherein R A is each independently hydrogen or a methyl group, Z 1 is a single bond, a C 1 -C 6 aliphatic hydrocarbylene group, a phenylene group, a naphthylene group, a C 7 -C 18 combination thereof, —O—Z 11 —, —C(═))—O—Z 11 —, or —C(═O)—NH—Z 11 —, Z 11 is a C 1 -C 6 aliphatic hydrocarbylene group, a phenylene group, a naphthylene group, or a C 7 -C 18 combination thereof, which may contain a carbonyl group, an ester bond, an ether bond, or a hydroxyl group, Z 2 is a single bond, —Z 21 —C(═O)—O—, —Z 21 —O—, or —Z 21 —O—C(═O)—, Z 21 is a C 1 -C 12 saturated hydrocarbylene group which may contain a carbonyl group, an ester bond, or an ether bond, Z 3 is a single bond, a methylene group, an ethylene group, a phenylene group, a fluorinated phenylene group, —O—Z 31 —, —C(═O)—O—Z 31 —, or —C(═O)—NH—Z 31 —, Z 31 is a C 1 -C 6 aliphatic hydrocarbylene group, a phenylene group, a fluorinated phenylene group, or a trifluoromethyl-substituted phenylene group which may contain a carbonyl group, an ester bond, an ether bond, or a hydroxyl group, R 21 to R 28 are each independently a halogen or a C 1 -C 20 hydrocarbyl group which may contain a heteroatom, a pair of R 23 and R 24 or R 26 and R 27 may bond together to form a ring with a sulfur atom to which they are attached, R HF is hydrogen or a trifluoromethyl group, and M − is a non-nucleophilic counter ion. 10. The resist composition of claim 1 , further comprising a surfactant. 11. The resist composition of claim 1 wherein the halide ion is a chloride ion, a bromide ion, or an iodide ion, the sulfonic acid anion not having fluorine at the α-position is represented by the formula (B), the carboxylic acid anion is represented by the formula (C) or (D), and the sulfonamide anion is represented by the formula (E), R q1 —SO 3 −   (B) wherein R q1 is hydrogen or a C 1 -C 40 hydrocarbyl group which may contain a heteroatom, exclusive of the hydrocarbyl group in which the hydrogen bonded to the carbon atom at α-position of the sulfo group is substituted by fluorine or a fluoroalkyl group, R q2 —CO 2 −   (C) wherein R q2 is a C 1 -C 40 hydrocarbyl group which may contain a heteroatom, wherein R q3 is hydroxyl, fluorine, chlorine, bromine, amino, nitro, cyano, or a C 1 -C 6 saturated hydrocarbyl, C 1 -C 6 saturated hydrocarbyloxy, C 2 -C 6 saturated hydrocarbylcarbonyloxy, or C 1 -C 4 saturated hydrocarbylsulfonyloxy group, in which some or all hydrogen may be substituted by a halogen, or —N(R q3A )—C(═O)—R q3B , or —N(R q3A )—C(═O)—O—R q3B , R q3A is hydrogen or a C 1 -C 6 saturated hydrocarbyl group, R q3B is a C 1 -C 6 saturated hydrocarbyl or C 2 -C 8 unsaturated aliphatic hydrocarbyl group, x′ is an integer of 1 to 5, y′ is an integer of 0 to 3, z′ is an integer of 1 to 3, and L 1 is a single bond, or a C 1 -C 20 (z′+1)-valent linking group which may contain at least one group selected from an ether bond, a carbonyl group, an ester bond, an amide bond, a sultone ring, a lactam ring, a carbonate group, a halogen, a hydroxyl group, or a carboxyl group, wherein R q4 is fluorine, a C 1 -C 10 hydrocarbyl group, or a C 1 -C 10 fluorinated hydrocarbyl group, which may contain a hydroxyl group, an ether bond, or an ester bond, R q5 is hydrogen or a C 1 -C 10 hydrocarbyl group which may contain a hydroxyl group, an ether bond, or a

Assignees

Inventors

Classifications

  • G03F7/0045Primary

    with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • containing halogen · CPC title

  • having three rings · CPC title

  • Monocarboxylic acids · CPC title

  • Salicylic acid · CPC title

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Frequently asked questions

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What does patent US11720019B2 cover?
A resist composition comprising a quencher containing a sulfonium salt having the formula (A).
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 08 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).