Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound

Patent metadata

Field	Value
Publication number	US-9766541-B2
Application number	US-201615186044-A
Country	US
Kind code	B2
Filing date	Jun 17, 2016
Priority date	Jun 26, 2015
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition including a base material component whose solubility in an alkali developing solution increases under the action of an acid; and a compound represented by the following general formula (m0):

Z 01 to Z 04 each independently represent a substituent having electron withdrawing properties, Rb 21 and Rb 22 each independently represent an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, Rb 1 represents an aryl group which may have a substituent, an alkyl group, or an alkenyl group, n1 and n2 represent an integer of 0 to 3, and X0 − represents an organic anion.

First claim

What is claimed is:

1. A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition comprising
a base material component (A) whose solubility in an alkali developing solution increases under the action of an acid; and
a compound (m) represented by the following general formula (m0):

wherein Z 01 to Z 04 each independently represents a substituent having electron withdrawing properties,
Rb 21 and Rb 22 each independently represents an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, with the proviso that the substituent which Rb 21 and Rb 22 may have does not include a substituent having electron withdrawing properties,
Rb 1 represents an aryl group which may have a substituent, an alkyl group which may have a substituent, or an alkenyl group which may have a substituent,
n1 and n2 each independently represents an integer of 0 to 3, and
X0 − represents an organic anion.

2. The positive-type resist composition according to claim 1 , comprising:
a base material component (A) whose solubility in an alkali developing solution increases under the action of an acid;
an acid generator component (B1) which generates an acid upon exposure and includes the compound (m) represented by general formula (m0); and
a photo-reactive quencher (D1).

3. The positive-type resist composition according to claim 1 , comprising:
a base material component (A) whose solubility in an alkali developing solution increases under the action of an acid;
an acid generator component (B2) which generates an acid upon exposure; and
a photo-reactive quencher (D2) which includes the compound (m) represented by general formula (m0).

4. The positive-type resist composition according to claim 1 ,
wherein X0 − in general formula (m0) represents an organic anion represented by any one of the following general formulae (d1-an-1) to (d1-an-3):

wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, with the proviso that two or more fluorine atoms are not bonded to a carbon atom adjacent to the S atom in Rd 2 of formula (d1-an-2), and Yd 1 is a single bond or a divalent linking group.

5. The positive-type resist composition according to claim 2 , wherein X0 − in general formula (m0) represents an organic anion represented by any one of the following general formulae (d1-an-1) to (d1-an-3):

wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, with the proviso that two or more fluorine atoms are not bonded to a carbon atom adjacent to the S atom in Rd 2 of formula (d1-an-2), and Yd 1 is a single bond or a divalent linking group.

6. The positive-type resist composition according to claim 3 , wherein X0 − in general formula (m0) represents an organic anion represented by any one of the following general formulae (d1-an-1) to (d1-an-3):

wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, with the proviso that two or more fluorine atoms are not bonded to a carbon atom adjacent to the S atom in Rd 2 of formula (d1-an-2), and Yd 1 is a single bond or a divalent linking group.

7. The positive-type resist composition according to claim 1 , wherein the base material component (A) includes a resin component (A1) which has a structural unit (a9) represented by general formula (a9-1) or a structural unit (a10) including an aromatic hydrocarbon group having a hydroxy group:

wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 91 represents a single bond or a divalent linking group, R 91 represents a hydrocarbon group which may have a substituent, and Ya 92 represents a divalent linking group.

8. The positive-type resist composition according to claim 2 , wherein the base material component (A) includes a resin component (A1) which has a structural unit (a9) represented by general formula (a9-1) or a structural unit (a10) including an aromatic hydrocarbon group having a hydroxy group:

wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 91 represents a single bond or a divalent linking group, R 91 represents a hydrocarbon group which may have a substituent, and Ya 92 represents a divalent linking group.

9. The positive-type resist composition according to claim 3 , wherein the base material component (A) includes a resin component (A1) which has a structural unit (a9) represented by general formula (a9-1) or a structural unit (a10) including an aromatic hydrocarbon group having a hydroxy group:

wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 91 represents a single bond or a divalent linking group, R 91 represents a hydrocarbon group which may have a substituent, and Ya 92 represents a divalent linking group.

10. The positive-type resist composition according to claim 4 , wherein the base material component (A) includes a resin component (A1) which has a structural unit (a9) represented by general formula (a9-1) or a structural unit (a10) including an aromatic hydrocarbon group having a hydroxy group:

wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 91 represents a single bond or a divalent linking group, R 91 represents a hydrocarbon group which may have a substituent, and Ya 92 represents a divalent linking group.

11. The positive-type resist composition according to claim 5 , wherein the base material component (A) includes a resin component (A1)which has a structural unit (a9) represented by general formula (a9-1) or a structural unit (a10) including an aromatic hydrocarbon group having a hydroxy group:

wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 91 represents a single bond or a divalent linking group, R 91 represents a hydrocarbon group which may have a substituent, and Ya 92 represents a divalent linking group.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Yamazaki Hiroto
• Komuro Yoshitaka
• Arai Masatoshi
• Kawana Daisuke
• Suzuki Kenta
• Fujii Tatsuya

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/2059

  using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• C07C381/12

  Sulfonium compounds · CPC title