Polyurethane polishing pad and composition for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11717932-B2
Application number	US-201916668383-A
Country	US
Kind code	B2
Filing date	Oct 30, 2019
Priority date	Dec 14, 2018
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

The present disclosure provides a composition for manufacturing a polyurethane polishing pad. The composition includes 15 to 25 wt % of MBCA, 25 to 45 wt % of isocyanates, 15 to 45 wt % of polyols, 5 to 35 wt % of EOPO, and 1 to 5 wt % of additives. The polyurethane polishing pad made from the composition of the present disclosure has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm2, and a tensile stress within a range of 120 to 320 kg/cm2.

First claim

What is claimed is:

1. A polyurethane polishing pad manufactured from a composition, the composition comprising:
15 to 25 weight percent (wt %) of 4,4′-methylene-bis(2-chloroaniline) (MBCA);
25 to 45 wt % of isocyanates;
10 to 25 wt % of an ethylene oxide propylene oxide copolyol (EOPO);
15 to 45 wt % of polyols other than EOPO; and
1 to 5 wt % of additives.

2. The polyurethane polishing pad of claim 1 , wherein the additives of the composition are selected from a group comprising surfactants, fillers, catalysts, processing aids, antioxidants, stabilizers, lubricants, and conductive additives.

3. The polyurethane polishing pad of claim 2 , wherein the conductive additives are selected from a group comprising carbon black, carbon fiber, and alumina particles.

4. The polyurethane polishing pad of claim 1 , wherein the isocyanates of the composition comprise at least one of toluene diisocyanate (TDI) and methylene diphenyl diisocyanate (MDI).

5. The polyurethane polishing pad of claim 1 , wherein the polyols other than EOPO of the composition comprise poly(tetramethylene ether)glycol (PTMG).

6. The polyurethane polishing pad of claim 1 , wherein the polyurethane polishing pad has a hardness within a range of 40 to 70 Shore D.

7. The polyurethane polishing pad of claim 1 , wherein the polyurethane polishing pad has an elongation within a range of 200 to 400%.

8. The polyurethane polishing pad of claim 1 , wherein the polyurethane polishing pad has a density within a range of 0.7 to 0.9 g/cc.

9. The polyurethane polishing pad of claim 1 , wherein the polyurethane polishing pad has a modulus within a range of 25000 to 40000 kg/cm 2 .

10. The polyurethane polishing pad of claim 1 , wherein the polyurethane polishing pad has a tensile stress within a range of 120 to 320 kg/cm 2 .

11. A method of manufacturing a polyurethane polishing pad, comprising:
providing a composition for manufacturing the polishing pad, wherein the composition comprises:
15 to 25 wt % of 4,4′-methylene-bis(2-chloroaniline);
25 to 45 wt % of isocyanates;
10 to 25 wt % of an ethylene oxide propylene oxide copolyol (EOPO);
15 to 45 wt % of polyols other than EOPO; and
1 to 5 wt % of additives;

casting the composition into an open mold; and
heating the composition to cure the composition and produce a polyurethane resin foam.

12. The method of claim 11 , wherein the polyurethane polishing pad has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm 2 , and a tensile stress within a range of 120 to 320 kg/cm 2 .

13. A chemical mechanical polishing (CMP) apparatus for polishing a wafer, the CMP apparatus comprising:
a platen having a polishing pad for polishing the wafer with a slurry, wherein the polishing pad is a polyurethane polishing pad manufactured from a composition comprising:
15 to 25 wt % of 4,4′-methylene-bis(2-chloroaniline);
25 to 45 wt % of isocyanates;
10 to 25 wt % of an ethylene oxide propylene oxide copolyol (EOPO);
15 to 45 wt % of polyols other than EOPO; and
1 to 5 wt % of additives;

a retaining ring configured to hold the wafer, and
a carrier head connected to the retaining ring and configured to rotate the retaining ring.

14. The CMP apparatus of claim 13 , further comprising a supply tube configured to supply the slurry to the polishing pad.

15. The CMP apparatus of claim 13 , further comprising a drive motor connected to the carrier head and configured to rotate the carrier head.

Assignees

• Xia Tai Xin Semiconductor Qing Dao Ltd

Inventors

• Kim Kwang-Bok

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• B24B37/107 Primary

  in a rotary movement only, about an axis being stationary during lapping · CPC title

• B24B37/32

  Retaining rings · CPC title

• C08G18/485

  containing mixed oxyethylene-oxypropylene or oxyethylene-higher oxyalkylene end groups · CPC title