High planarization efficiency chemical mechanical polishing pads and methods of making

Patent metadata

Field	Value
Publication number	US-10086494-B2
Application number	US-201615264056-A
Country	US
Kind code	B2
Filing date	Sep 13, 2016
Priority date	Sep 13, 2016
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

First claim

We claim:

1. A chemical mechanical (CMP) polishing pad for polishing a substrate chosen from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate comprise a polishing layer adapted for polishing the substrate which is a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % of the polyisocyanate prepolymer, the polyisocyanate prepolymer formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, and wherein the polyurethane reaction product in the polishing pad has a Shore D hardness according to ASTM D2240-15 (2015) of from 65 to 80 and exhibits a wet Shore D hardness according to ASTM D2240-15 (2015) after soaking in deionized (DI) water for a period of 7 days of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

2. The CMP polishing pad as claimed in claim 1 , wherein the polyisocyanate prepolymer has an unreacted isocyanate (NCO) concentration of from 8.6 to 9.3 wt. %.

3. The CMP polishing pad as claimed in claim 1 , wherein the amount of toluene diisocyanate (TDI) used to form the polyisocyanate prepolymer ranges from more than 35 wt. % to 45 wt. %, based on the total wt. % of the reactants used to make the polyisocyanate prepolymer, wherein, further, the amount of the one or more isocyanate extenders used to form the polyisocyanate prepolymer ranges from 3 to 11 wt. %, based on the total weight of the reactants used to make the polyisocyanate prepolymer, and wherein, still further, the amount of the polyol blend used to form the polyisocyanate prepolymer ranges from 44 to less than 62 wt. %, based on the total wt. % of the reactants used to make the polyisocyanate prepolymer.

4. The CMP polishing pad as claimed in claim 1 , wherein the polyol blend used to form the polyisocyanate prepolymer contains a hydrophilic portion and is chosen from (i) a polyol blend of PTMEG and PPG in a ratio of PTMEG to PPG of from 1:1.5 to 1:2 and a hydrophilic portion in the amount of from 20 to 30 wt. %, based on the total weight of reactants used to make the polyisocyanate prepolymer or (ii) a polyol blend of PTMEG and PPG in a ratio of PTMEG to PPG of from 9:1 to 12:1 wt. ratio and a hydrophilic portion in the amount of from 1 to 10 wt. %, based on the total weight of reactants used to make the polyisocyanate prepolymer.

5. The CMP polishing pad as claimed in claim 1 , wherein the polyurethane reaction product is formed from a reaction mixture containing from 70 to 81 wt. %, based on the total weight of the reaction mixture, of the polyisocyanate prepolymer, from 19 to 27.5 wt. %, based on the total weight of the reaction mixture, of the curative and from 0 to 2.5 wt. %, of one or more microelements, based on the total weight of the reaction mixture.

6. The CMP polishing pad as claimed in claim 1 , wherein the curative in the reaction mixture is chosen from a diamine or a mixture of a diamine and a polyol curative and the molar ratio of polyamine NH 2 groups to polyol OH groups ranges from 40:1 to 1:0.

7. The CMP polishing pad as claimed in claim 6 , wherein the stoichiometric ratio of the sum of the total moles of amine (NH 2 ) groups and the total moles of hydroxyl (OH) groups in the curative in the reaction mixture to the total moles of unreacted isocyanate (NCO) groups in the reaction mixture ranges from 0.91:1 to 1.15:1.

8. The CMP polishing pad as claimed in claim 1 , wherein the polishing pad or polishing layer has a density of 0.93 to 1.1 g/cm 3 .

9. The CMP polishing pad as claimed in claim 1 , wherein the polishing pad further comprises microelements chosen from entrapped gas bubbles, hollow core polymeric materials, liquid filled hollow core polymeric materials, and boron nitride.

10. A method for making a chemical mechanical (CMP) polishing pad having a polishing layer adapted for polishing a substrate comprising:
providing one or more polyisocyanate prepolymer as claimed in claim 1 at a temperature of from 45 to 65° C.;
forming a reaction mixture containing from 70 to 81 wt. %, based on the total weight of the reaction mixture, of the polyisocyanate prepolymer, from 0.0 to 2.5 wt. %, based on the total weight of the reaction mixture, of one or more microelements, wherein the microelements and the polyisocyanate prepolymer are blended together, cooling the polyisocyanate prepolymer and microelement mixture to from 20 to 40° C.;
providing, as a separate component, from 19 to 27.5 wt. %, based on the total weight of the reaction mixture, of a curative;
combining the components of the reaction mixture, preheating a mold to from 60 to 100° C.;
filling the mold with the reaction mixture and heat curing the reaction mixture at a temperature of from 80 to 120° C. for a period of from 4 to 24 hours to form a cast polyurethane; and,
forming a polishing layer from the cast polyurethane.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Dow Global Technologies Llc

Inventors

• Weis Jonathan G
• Jacob George C
• Kumar Bhawesh
• Mastroianni Sarah E
• Xu Wenjun
• Chiou Nan-Rong
• Islam Mohammad T

Classifications

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• B24B37/22

  characterised by a multi-layered structure · CPC title

• B24B53/017

  Devices or means for dressing, cleaning or otherwise conditioning lapping tools · CPC title

• B24D11/00

  Constructional features of flexible abrasive materials; Special features in the manufacture of such materials · CPC title

• B24B37/245 Primary

  Pads with fixed abrasives · CPC title