Light detecting device

Patent metadata

Field	Value
Publication number	US-11716555-B2
Application number	US-202117161877-A
Country	US
Kind code	B2
Filing date	Jan 29, 2021
Priority date	Sep 16, 2011
Publication date	Aug 1, 2023
Grant date	Aug 1, 2023

Abstract

A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

First claim

What is claimed is:

1. A light detecting device, comprising:
a semiconductor substrate including a first surface and a second surface, wherein the first surface is a light receiving side of the semiconductor substrate, and wherein the second surface is a side of the semiconductor substrate opposite to the light receiving side of the semiconductor substrate;
a first photoelectric conversion element disposed in the semiconductor substrate;
transistors disposed at the second surface side of the semiconductor substrate; and
a light shielding section, wherein at least a first portion of the light shielding section is disposed over the first surface and overlaps the transistors in a plan view, wherein the first portion of the light shielding section does not overlap the first photoelectric conversion element in the plan view, wherein a second portion of the light shielding section is disposed in a trench, and wherein the first portion of the light shielding section is in direct contact with the second portion of the light shielding section.

2. The light detecting device according to claim 1 , wherein the light shielding section includes at least one metal material.

3. The light detecting device according to claim 1 , wherein the light shielding section includes tungsten.

4. The light detecting device according to claim 1 , wherein the light shielding section is disposed over a floating diffusion in a cross-sectional view.

5. The light detecting device according to claim 4 , wherein the light shielding section is configured to shield from an incident light.

6. The light detecting device according to claim 1 , further comprising:
a wiring layer disposed under the second surface.

7. The light detecting device according to claim 1 , further comprising:
a second photoelectric conversion element adjacent to the first photoelectric conversion element.

8. The light detecting device according to claim 7 , further comprising:
a first separation region including an insulation material disposed between the first photoelectric conversion element and the second photoelectric conversion element in a cross-sectional view.

9. The light detecting device according to claim 8 , further comprising:
a second separation region including an insulation material disposed between the first photoelectric conversion element and the second photoelectric conversion element in the cross-sectional view.

10. The light detecting device according to claim 1 , wherein the transistors are an amplification transistor, a reset transistor, and a selection transistor.

11. The light detecting device according to claim 8 , wherein the first separation region includes a metal material.

12. The light detecting device according to claim 11 , wherein the metal material contacts the light shielding section.

13. The light detecting device according to claim 8 , wherein the insulation material includes an oxide film.

14. The light detecting device according to claim 9 , wherein the first separation region includes a first trench, and wherein the second separation region includes a second trench.

15. The light detecting device according to claim 14 , wherein the second trench penetrates the semiconductor substrate.

16. The light detecting device according to claim 1 , wherein the first portion of the light shielding section is a lid section, and wherein the second portion of the light shielding section extends in a direction that is almost perpendicular to the first portion of the light shielding section.

Assignees

• Sony Corp

Inventors

• Ohkubo Tomohiro
• Endo Suzunori

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/192

  Colour image sensors · CPC title

• H10F39/159

  comprising a photoconductive layer deposited on the CCD structure · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/014

  of CMOS image sensors · CPC title