Solid-state image sensor with high-permittivity material film and a light shielding section, method for producing solid-state image sensor, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10944930-B2
Application number	US-201916582203-A
Country	US
Kind code	B2
Filing date	Sep 25, 2019
Priority date	Sep 16, 2011
Publication date	Mar 9, 2021
Grant date	Mar 9, 2021

Abstract

A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

First claim

What is claimed is:

1. A solid-state image sensor comprising:
a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
a high-permittivity material film, wherein the high-permittivity material film is at least partially disposed on a light incident surface side of the semiconductor substrate and in a groove formed in the semiconductor substrate in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate; and
a light shielding section having an embedded section formed in the high-permittivity material film and extending into the groove formed in the semiconductor substrate in at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

2. The solid-state image sensor according to claim 1 , further comprising:
a wiring layer having a plurality of wirings; wherein
the light enters the photoelectric conversion element from a back side of the semiconductor substrate, the back side opposite to a front side of the semiconductor substrate on which the wiring layer is provided.

3. The solid-state image sensor according to claim 1 , wherein
the embedded section of the light shielding section is formed in such a way as to surround the photoelectric conversion element and the charge retaining section.

4. The solid-state image sensor according to claim 1 , wherein
the light shielding section further has a lid section formed in the high-permittivity material film and covering at least the charge retaining section on a back side of the semiconductor substrate, wherein light enters a back side of the photoelectric conversion element.

5. The solid-state image sensor according to claim 4 , wherein
in the lid section of the light shielding section, an opening is formed in a region corresponding to the photoelectric conversion element.

6. The solid-state image sensor according to claim 1 , wherein
the light shielding section further has a front-side lid section formed in the high-permittivity layer film and covering at least the charge retaining section on a front side of the semiconductor substrate opposite to a side on which the light enters the photoelectric conversion element.

7. The solid-state image sensor according to claim 6 , wherein
in the front-side lid section of the light shielding section, an opening is formed in a region corresponding to the photoelectric conversion element.

8. A method for producing a solid-state image sensor comprising:
forming, on a semiconductor substrate, a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
forming a groove in the semiconductor substrate in a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate;
forming a high-permittivity material film on a light incident surface side of the semiconductor substrate and in the groove formed between the photoelectric conversion element and the charge retaining section of the semiconductor substrate; and
forming a light shielding section having an embedded section in the high-permittivity material film and extending into the groove formed in the semiconductor substrate in at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

9. An electronic apparatus comprising:
a solid-state image sensor including a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
a high-permittivity material film, wherein the high-permittivity material film is at least partially disposed on a light incident surface of the semiconductor substrate and in a groove formed in the semiconductor substrate in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate; and
a light shielding section having an embedded section formed in the high-permittivity material film and extending into at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Assignees

• Sony Corp

Inventors

• Ohkubo Tomohiro
• Endo Suzunori

Classifications

• H04N25/76 Primary

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/192

  Colour image sensors · CPC title

• H10F39/159

  comprising a photoconductive layer deposited on the CCD structure · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title