Solid-state image sensor, method for producing solid-state image sensor, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10462404-B2
Application number	US-201715589999-A
Country	US
Kind code	B2
Filing date	May 8, 2017
Priority date	Sep 16, 2011
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

First claim

What is claimed is:

1. An image sensor comprising:
a semiconductor substrate including a first photoelectric conversion region adjacent to a second photoelectric conversion region;
a plurality of on-chip lenses located above the semiconductor substrate;
a light-shielding section including:
an embedded section extending vertically in at least a region between the first photoelectric conversion region and the second photoelectric conversion region; and
a lid section extending horizontally above the first photoelectric conversion region and a portion of the second photoelectric conversion region, wherein a portion of the lid section is between a first on-chip lens that corresponds to the second photoelectric conversion region and the portion of the second photoelectric conversion region; and a metallic oxide film disposed adjacent to the semiconductor substrate.

2. The image sensor according to claim 1 , further comprising:
a wiring layer having a plurality of wirings, wherein light is incident at a back side of the semiconductor substrate, the back side opposite to a front side of the semiconductor substrate on which the wiring layer is provided.

3. The image sensor according to claim 1 , wherein the embedded section of the light-shielding section is formed in such a way as to surround the first photoelectric conversion region and a charge retaining section.

4. The image sensor according to claim 1 , wherein in the lid section of the light-shielding section, an opening is formed in a region corresponding to the first photoelectric conversion region.

5. The image sensor according to claim 1 , wherein the light-shielding section further includes a front-side lid section disposed in such a way as to cover at least a charge retaining section on a front side of the semiconductor substrate opposite to a side on which light enters the first photoelectric conversion region.

6. The image sensor according to claim 1 , wherein the metallic oxide film is a material selected from the group consisting of silicon dioxide (SiO2), hafnium oxide (HfO2), tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), and combinations thereof.

7. An image sensor comprising:
a semiconductor substrate including a first photoelectric conversion region adjacent to a second photoelectric conversion region;
a plurality of on-chip lenses located above the semiconductor substrate; and
a light-shielding section including:
an embedded section extending vertically in at least a region between the first photoelectric conversion region and the second photoelectric conversion region; and
a lid section extending horizontally above the first photoelectric conversion region and a portion of the second photoelectric conversion region, wherein a portion of the lid section is between a first on-chip lens that corresponds to the second photoelectric conversion region and the portion of the second photoelectric conversion region, wherein the light-shielding section further includes a front-side lid section disposed in such a way as to cover at least a charge retaining section on a front side of the semiconductor substrate opposite to a side on which light enters the first photoelectric conversion region, and wherein, in the front-side lid section of the light-shielding section, an opening is formed in a region corresponding to the first photoelectric conversion region.

8. An image sensor comprising:
a semiconductor substrate including a first photoelectric conversion region adjacent to a second photoelectric conversion region;
a plurality of on-chip lenses located above the semiconductor substrate; and
a light-shielding section including:
an embedded section extending vertically in at least a region between the first photoelectric conversion region and the second photoelectric conversion region; and
a lid section extending horizontally above the first photoelectric conversion region and a portion of the second photoelectric conversion region, wherein a portion of the lid section is between a first on-chip lens that corresponds to the second photoelectric conversion region and the portion of the second photoelectric conversion region, wherein the embedded section is directly connected to the lid section.

9. The image sensor according to claim 8 , further comprising:
a groove portion disposed in the semiconductor substrate, wherein at least a portion of the embedded section is disposed in the groove portion.

10. An electronic device comprising:
an image sensor including:
a semiconductor substrate including a first photoelectric conversion region adjacent to a second photoelectric conversion region;
a plurality of on-chip lenses located above the semiconductor substrate; and
a light-shielding section including:
an embedded section extending vertically in at least a region between the first photoelectric conversion region and the second photoelectric conversion region; and
a lid section extending horizontally above the first photoelectric conversion region and a portion of the second photoelectric conversion region, wherein a portion of the lid section is between a first on-chip lens that corresponds to the second photoelectric conversion region and the portion of the second photoelectric conversion region;

a lens configured to guide light to a light-incident surface of the image sensor; and
a metallic oxide film disposed adjacent to the semiconductor substrate, wherein the metallic oxide film is a material selected from the group consisting of silicon dioxide (SiO2), hafnium oxide (HfO2), tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), and combinations thereof.

11. The electronic device according to claim 10 , further comprising:
a wiring layer having a plurality of wirings, wherein light is incident at a back side of the semiconductor substrate, the back side opposite to a front side of the semiconductor substrate on which the wiring layer is provided.

12. The electronic device according to claim 10 , wherein the embedded section of the light-shielding section is formed in such a way as to surround the first photoelectric conversion region and a charge retaining section.

13. The electronic device according to claim 10 , wherein in the lid section of the light-shielding section, an opening is formed in a region corresponding to the first photoelectric conversion region.

14. The electronic device according to claim 10 , wherein the light-shielding section further includes a front-side lid section disposed in such a way as to cover at least a charge retaining section on a front side of the semiconductor substrate opposite to a side on which light enters the first photoelectric conversion region.

15. An electronic device comprising:
an image sensor including:
a semiconductor substrate including a first photoelectric conversion region adjacent to a second photoelectric conversion region;
a plurality of on-chip lenses located above the semiconductor substrate; and
a light-shielding section including:
an embedded section extending vertically in at least a region between the first photoelectric conversion region and the second photoelectric conversion region; and
a lid section extending horizontally above the first photoelectric conversion region and a portion of the second photoelectric conversion region, wherein a portion of the lid section is between a first on-chip lens that corresponds to the second photoelectric conversion region and the portion of the second photoelectric conversion region; and

a lens configured to guide light to a light-incident surface of the image sensor, wherein the light-shielding section further incl

Assignees

• Sony Corp

Inventors

• Ohkubo Tomohiro
• Endo Suzunori

Classifications

• H04N25/76 Primary

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/14893

  Electricity · mapped topic

• H01L27/14689

  Electricity · mapped topic

• H01L27/1463

  Electricity · mapped topic

• H01L27/14629

  Electricity · mapped topic