Method of growing graphene selectively

Patent metadata

Field	Value
Publication number	US-11713248-B2
Application number	US-202017138194-A
Country	US
Kind code	B2
Filing date	Dec 30, 2020
Priority date	Jan 3, 2020
Publication date	Aug 1, 2023
Grant date	Aug 1, 2023

Abstract

A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

First claim

What is claimed is:

1. A method of growing graphene selectively, the method comprising:
forming an ion implantation region and an ion non-implantation region in a substrate by implanting ions locally into the substrate; and
selectively growing graphene in the ion implantation region or the ion non-implantation region, wherein
the selectively growing graphene in the ion implantation region or the ion non-implantation region includes forming a graphene pattern on the substrate,
the graphene pattern includes graphene on one of the ion implantation region or the ion non-implantation region, and
the graphene pattern exposes an other of the ion implantation region or the ion non-implantation region.

2. The method of claim 1 , wherein the ions comprise at least one of As, P, B, BCl 2 , In, Sb, Ge, N, H, He, and C.

3. The method of claim 1 , wherein the ions are implanted in a range of 10 11 at/cm 2 to 10 17 at/cm 2 .

4. The method of claim 1 , wherein the forming the ion implantation region is performed with an energy in a range of about 0.1 keV to about 10,000 keV during the implanting ions locally into the substrate.

5. The method of claim 1 , wherein the ions are configured to promote growth of graphene.

6. The method of claim 1 , wherein the ions are configured to inhibit growth of graphene.

7. The method of claim 1 , further comprising:
doping a dopant into the substrate, wherein
the dopant is configured to inhibit growth of graphene on the substrate.

8. The method of claim 1 , further comprising:
doping boron (B) into the substrate; and
doping phosphorus (P) into the ion implantation region.

9. The method of claim 1 , further comprising:
forming a diffusion barrier between the ion implantation region and a portion of the substrate adjacent thereto.

10. The method of claim 9 , wherein the diffusion barrier comprises TiN, TaN, graphene, or h-BN.

11. The method of claim 1 , wherein the substrate comprises a semiconductor, a conductor, or an insulator.

12. The method of claim 1 , wherein the
substrate comprises at least one of silicon, polysilicon, silicon oxide, titanium nitride, a derivative of silicon, a derivative of polysilicon, a derivative of silicon oxide, a derivative of titanium nitride, or a metal.

13. The method of claim 1 , wherein the selectively growing graphene is performed using a plasma chemical vapor deposition process.

14. The method of claim 1 , wherein the selectively growing graphene is performed at a temperature of 700 degrees or less.

15. The method of claim 1 , wherein the selectively growing graphene is performed at a process pressure in a range of about 0.01 Torr to about 5 Torr.

16. The method of claim 1 , wherein the selectively growing graphene is performed using a reaction gas including a mixture of a carbon source gas, an inert gas, and hydrogen gas.

17. The method of claim 16 , wherein the carbon source gas comprises at least one of methane gas, ethylene gas, acetylene gas, and a vapor of a liquid precursor including carbon.

18. The method of claim 16 , wherein the inert gas comprises at least one of argon gas, nitrogen gas, helium gas, krypton gas, and xenon gas.

19. A method of selectively growing graphene, the method comprising:
forming a first region in a substrate structure by transferring ions into the first region of the substrate structure and not transferring the ions into a second region of the substrate structure adjacent thereto along a surface of the substrate structure; and
selectively growing graphene on the surface of the substrate structure in the first region or the second region, wherein
the selectively growing graphene on the surface of the substrate structure in the first region or the second region including forming a graphene pattern on the surface of the substrate structure,
the graphene pattern includes graphene on one of the first region or the second region, and
the graphene pattern exposes an other of the first region or the second region.

20. The method of claim 19 , wherein the ions comprise at least one of As, P, B, BCl 2 , In, Sb, Ge, N, H, He, and C.

21. The method of claim 19 , wherein the selectively growing graphene on the surface of the substrate structure is performed to selectively grow the graphene on the first region of the substrate structure.

22. The method of claim 19 , wherein the selectively growing graphene on the surface of the substrate structure is performed to selectively grow the graphene on the second region of the substrate structure.

23. The method of claim 19 , wherein the substrate structure includes a diffusion barrier between the first region of the substrate structure and a portion of the substrate structure adjacent thereto.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Changseok
• Kim Changhyun
• Byun Kyung-Eun
• Shin Keunwook
• Shin Hyeonjin
• Lee Eunkyu

Classifications

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title

• C01B32/194

  After-treatment · CPC title

• C23C16/02

  Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

• C23C16/04

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C16/26

  Deposition of carbon only · CPC title