Laser irradiation method and laser irradiation system

Patent metadata

Field	Value
Publication number	US-11710660-B2
Application number	US-202016855427-A
Country	US
Kind code	B2
Filing date	Apr 22, 2020
Priority date	Dec 21, 2017
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

First claim

What is claimed is:

1. A laser irradiation method of irradiating an irradiation object in which an impurity source film containing at least an impurity element as a dopant is formed on a semiconductor substrate with a pulse laser beam having photon energy larger than the bandgap energy of the semiconductor substrate, the pulse laser beam generated by a laser irradiation system that includes
a stage configured to move, in at least one scanning direction, an irradiation object in which an impurity source film containing at least an impurity element as a dopant is formed on a semiconductor substrate;
a laser apparatus configured to generate the pulse laser beam having photon energy larger than the bandgap energy of the semiconductor substrate;
an optical system through which the pulse laser beam is shaped to have a rectangular beam shape and incident on an irradiation region having a rectangular shape and set on the irradiation object; and
a laser irradiation control unit configured to control the stage and the laser apparatus,
the laser irradiation system configured to perform the laser irradiation method comprising:
reading, as a first irradiation condition for laser doping, first fluence that is fluence per pulse of the pulse laser beam with which the irradiation region is irradiated and a first irradiation pulse number that is the number of irradiation pulses the irradiation region is irradiated, the number being equal to or larger than two, the first fluence being equal to or larger than a threshold at or beyond which ablation occurs to the impurity source film when the irradiation object is irradiated with the pulse laser beam in the same number of pulses as the first irradiation pulse number and smaller than a threshold at or beyond which damage occurs to a surface of the semiconductor substrate;
calculating a first scanning speed Vdx based on Expression (e) below when Bx represents a width of the irradiation region in a scanning direction, Nd represents the first irradiation pulse number, and f represents a repetition frequency of the pulse laser beam; and
moving the irradiation object at the first scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f
Vdx=f·Bx/Nd   (e);

reading, as a second irradiation condition for post annealing, second fluence that is fluence per pulse of the pulse laser beam with which the irradiation region is irradiated and a second irradiation pulse number that is the number of irradiation pulses the irradiation region is irradiated, the number being equal to or larger than two, the second fluence being equal to or larger than a fluence threshold at or beyond which defects in the semiconductor substrate are repaired when the irradiation object is irradiated with the pulse laser beam in the same number of pulses as the second irradiation pulse number and smaller than a threshold at or beyond which damage occurs to the surface of the semiconductor substrate;
calculating a second scanning speed Vpx based on Expression (f) below when Np represents the second irradiation pulse number; and
moving the irradiation object at the second scanning speed Vpx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f
Vpx=f·Bx/Np   (f);

the first fluence Fd and the second fluence Fp satisfy the expression Fp<Fd.

2. The laser irradiation method according to claim 1 , further comprising:
dimming the pulse laser beam output from the laser apparatus through an attenuator included in the laser irradiation system having a variable transmittance in accordance with the transmittance and outputting the pulse laser beam.

3. The laser irradiation method according to claim 2 , wherein the laser irradiation control unit further performs processing of:
calculating a transmittance Td of the attenuator for laser doping based on Expression (g) below when Fd represents the first fluence, Et represents pulse energy of the pulse laser beam output from the laser apparatus, and By represents a width of the irradiation region in a direction orthogonal to the scanning direction; and
setting the transmittance of the attenuator to be the transmittance Td calculated based on Expression (g) below,
Td =( Fd/Et )( Bx·By )  (g).

4. The laser irradiation method according to claim 3 , wherein the laser irradiation control unit further performs processing of:
calculating a transmittance Tp of the attenuator for post annealing based on Expression (h) below when Fp represents the second fluence; and
setting the transmittance of the attenuator to be the transmittance Tp calculated based on Expression (h) below,
Tp =( Fp/Et )( Bx·By )  (h).

5. The laser irradiation method according to claim 4 , including shaping the pulse laser beam having transmitted through the attenuator to have a rectangular beam shape by transmitting the pulse laser beam through a beam homogenizer included as part of the optical system.

Assignees

• Gigaphoton Inc
• Univ Kyushu Nat Univ Corp

Inventors

• Ikenoue Hiroshi
• Wakabayashi Osamu
• Oizumi Hiroaki
• Suwa Akira

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/171

  being group IV material · CPC title