Wafer production method
US-11004723-B2 · May 11, 2021 · US
US11699616B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11699616-B2 |
| Application number | US-202117221098-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 2, 2021 |
| Priority date | Oct 8, 2013 |
| Publication date | Jul 11, 2023 |
| Grant date | Jul 11, 2023 |
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A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.
Opening claim text (preview).
What is claimed is: 1. A method for producing a layer of solid material, the method comprising: providing a solid body having a first surface and a second surface opposite the first surface, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane comprising regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack. 2. The method of claim 1 , wherein generating the mechanical stress in the solid body comprises: cooling the polymer layer such that the polymer layer contracts and/or undergoes a glass transition. 3. The method of claim 2 , wherein the polymer layer is cooled at or below ambient temperature. 4. The method of claim 2 , wherein the polymer layer is cooled below −10° C. 5. The method of claim 2 , wherein the polymer layer is cooled below −100° C. 6. The method of claim 2 , wherein the polymer layer is cooled to a temperature at which at least part of the polymer layer undergoes a glass transition. 7. The method of claim 1 , wherein the polymer layer comprises polydimethylsiloxane (PDMS). 8. The method of claim 1 , wherein the polymer layer holds the layer of solid material on the solid body. 9. The method of claim 1 , wherein the polymer layer is disposed on the second surface of the solid body. 10. The method of claim 1 , the at least one laser beam is provided by at least one radiation source such that rays irradiated by the at least one radiation source generate the defects at predetermined locations within the solid body. 11. The method of claim 10 , further comprising arranging the at least one radiation source such that the rays irradiated by the at least one radiation source generate the detachment plane and penetrate into the solid body to a defined depth of less than 200 μm. 12. The method of claim 10 , further comprising arranging the at least one radiation source such that the rays irradiated by the at least one radiation source generate the detachment plane and penetrate into the solid body to a defined depth of more than 100 μm. 13. The method of claim 10 , wherein the at least one radiation source comprises a femtosecond laser. 14. The method of claim 13 , further comprising: selecting energy of the femtosecond laser such that damage propagation within the solid body is smaller than 3 times the Rayleigh length; and/or selecting a wavelength of the femtosecond laser such that an absorption of the solid body is less than 10 cm −1 . 15. The method of claim 10 , wherein the at least one radiation source has a pulse duration of less than 10 ps. 16. The method of claim 1 , further comprising placing the solid body on a holding layer for holding the solid body, the holding layer being disposed on the first surface of the solid body. 17. The method of claim 1 , wherein the detachment plane is aligned parallel to the first surface and/or the second surface of the solid body. 18. The method of claim 1 , wherein the solid body includes silicon carbide and/or gallium arsenite and/or a ceramic material and the polymer layer, and wherein the polymer layer comprises polydimethylsiloxane (PDMS). 19. The method of claim 1 , wherein the stresses in the solid body are set up such that initiation and/or propagation of the crack is controlled to generate a pre-determined topography of a surface that is produced in the detachment plane. 20. The method of claim 1 , wherein the solid body is a semiconductor material or a ceramic material, or the solid body comprises at least one semiconductor material or a ceramic material.
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Electricity · mapped topic
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taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence) · CPC title
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