Wafer production method

Patent metadata

Field	Value
Publication number	US-11004723-B2
Application number	US-202016793429-A
Country	US
Kind code	B2
Filing date	Feb 18, 2020
Priority date	Oct 8, 2013
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

First claim

What is claimed is:

1. A method for producing a layer of solid material, the method comprising:
providing a solid body having a first surface and a second surface opposite the first surface, the second surface being part of the layer of solid material;
generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane comprising regions with different concentrations of defects;
providing a polymer layer on the solid body; and
subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

2. The method of claim 1 , wherein the first surface of the solid body is level, and wherein the second surface of the solid body is level.

3. The method of claim 1 , wherein the layer of solid material is thinner than a remaining part of the solid body from which the layer of solid material is separated.

4. The method of claim 1 , wherein the polymer layer holds the layer of solid material on the solid body.

5. The method of claim 1 , wherein the polymer layer is disposed on the second surface of the solid body.

6. The method of claim 1 , wherein at least part of the polymer layer undergoes a glass transition during the cooling.

7. The method of claim 1 , the at least one laser beam is provided by at least one radiation source such that rays irradiated by the at least one radiation source generate the defects at predetermined locations within the solid body.

8. The method of claim 7 , further comprising arranging the at least one radiation source such that the rays irradiated by the at least one radiation source generate the detachment plane and penetrate into the solid body to a defined depth of less than 200 μm.

9. The method of claim 7 , further comprising arranging the at least one radiation source such that the rays irradiated by the at least one radiation source generate the detachment plane and penetrate into the solid body to a defined depth of more than 100 μm.

10. The method of claim 7 , wherein the at least one radiation source comprises a femtosecond laser.

11. The method of claim 10 , further comprising selecting energy of the femtosecond laser such that damage propagation within the solid body is smaller than 3 times the Rayleigh length.

12. The method of claim 10 , further comprising selecting a wavelength of the femtosecond laser such that an absorption of the solid body is less than 10 cm −1 .

13. The method of claim 10 , wherein the defects resulting from multiphoton excitation brought about by the femtosecond laser.

14. The method of claim 7 , wherein the at least one radiation source has a pulse duration of less than 10 ps.

15. The method of claim 1 , further comprising placing the solid body on a holding layer for holding the solid body, the holding layer being disposed on the first surface of the solid body.

16. The method of claim 1 , wherein the detachment plane is aligned parallel to the first surface and/or the second surface of the solid body.

17. The method of claim 1 , wherein the solid body includes silicon carbide and/or gallium arsenite and/or a ceramic material and the polymer layer, wherein the polymer layer comprises PDMS.

18. The method of claim 1 , wherein the stresses in the solid body are set up such that initiation and/or propagation of the crack is controlled to generate a pre-determined topography of a surface that is produced in the detachment plane.

19. The method of claim 1 , wherein the solid body is a semiconductor material or a ceramic material.

20. The method of claim 1 , wherein the solid body comprises at least one semiconductor material or a ceramic material.

Assignees

• Siltectra Gmbh

Inventors

• Drescher Wolfram
• Richter Jan
• Beyer Christian

Classifications

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10W46/503

  Located in scribe lines · CPC title