Method and apparatus for bonding together two wafers by molecular adhesion
US-9004135-B2 · Apr 14, 2015 · US
US11697281B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11697281-B2 |
| Application number | US-202117341509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2021 |
| Priority date | May 29, 2013 |
| Publication date | Jul 11, 2023 |
| Grant date | Jul 11, 2023 |
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A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
Opening claim text (preview).
Having described the invention, the following is claimed: 1. A method for bonding a first substrate to a second substrate on respective contact surfaces of the substrates, the method comprising: accommodating the first substrate on a first mounting surface of a first mounting apparatus and the second substrate on a second mounting surface of a second mounting apparatus, the second mounting apparatus comprising an opening, the opening having a nozzle configured to deform the second substrate by applying pressure thereto for alignment of the contact surfaces; bringing the contact surface of the first substrate into contact with the contact surface of the second substrate at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is traveling from the bond initiation site to side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for the alignment of the contact surfaces outside the bond initiation site before and/or during the bonding, wherein a radii of curvature of the substrates deviates only marginally from each other at least in a region at which the contact surfaces are brought into contact at a bond front of the bonding wave. 2. The method as claimed in claim 1 , wherein the radii of curvature of the substrates deviate from each other at the bond front less than 5%. 3. The method as claimed in claim 1 , wherein the radii of curvature of the substrates are the same at the bond front. 4. The method as claimed in claim 1 , wherein the deformation of the first substrate and/or the second substrate depends on given factors that influence the traveling of the bonding wave. 5. The method as claimed in claim 1 , wherein the bond initiation site is located in a center of the contact surfaces. 6. The method as claimed in claim 1 , wherein the deformation of the first substrate and/or the second substrate takes place in a lateral direction, convexly, concavely, or a combination one or more thereof. 7. The method as claimed in claim 1 , wherein the deformation of the first substrate and/or the second substrate comprises one of expansion, compression, or curving the first substrate and/or the second substrate. 8. The method as claimed in claim 1 , wherein diameters of the substrates deviate from one another by less than 5 mm. 9. The method as claimed in claim 1 , wherein the deformation comprises mechanically actuating and/or controlling a temperature of the first and/or second mounting apparatus. 10. The method as claimed in claim 1 , wherein the first substrate and/or the second substrate are fixed solely in a region of the side edges on the first and/or second mounting surfaces.
Electricity · mapped topic
Positioning, e.g. registration or centering · CPC title
Semiconductor wafers · CPC title
involving the assembly of discrete sheets or panels only · CPC title
Electrical conductivity · CPC title
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