Process for producing flexible organic-inorganic laminates

Patent metadata

Field	Value
Publication number	US-11685995-B2
Application number	US-201515316661-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	Jun 12, 2014
Publication date	Jun 27, 2023
Grant date	Jun 27, 2023

Abstract

The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

First claim

The invention claimed is:

1. A laminate comprising, more than once, a sequence comprising
(a) an inorganic layer of a (semi)metal oxide, elemental (semi)metal or (semi)metal nitride having a thickness of 0.4 to 3 nm and
(b) an organic layer consisting of S and one or more elements selected from the group consisting of C, H, O, N, Se and P,
wherein the laminate has a water vapor transmission rate (WVTR) of less than 10 −2 g/m 2 d when dried at 70% relative humidity at 70° C. for 480 h and bent with a radius of 1.5 cm.

2. The laminate according to claim 1 wherein the sulfur of the organic layer is in an oxidation state −2, −1 or 0.

3. The laminate according to claim 1 ,
wherein the inorganic layer comprises AlO x (OH) y ,
wherein 0≤x≤1.5;
0≤y≤3 and
2x+y=3.

4. The laminate according to claim 1 , comprising at least 30 of the inorganic layers (a) alternating with at least 30 of the organic layers (b).

5. A barrier film comprising the laminate according to claim 1 .

6. The barrier film according to claim 5 wherein the barrier film further comprises a polymeric substrate.

7. The barrier film according to claim 5 wherein the barrier film further comprises a planarization layer.

8. A method of encapsulating, packaging, or passivating an object, the method comprising:
encapsulating, packaging, or passivating the object with the barrier film according to claim 5 .

9. An electronic device comprising the barrier film according to claim 5 .

10. The barrier film according to claim 5 , which has a WVTR of less than 10 −5 g/m 2 d when dried at 70% relative humidity at 70° C. for 480 h.

11. The barrier film according to claim 5 , which has a WVTR of less than 10 −2 g/m 2 d when dried at 70% relative humidity at 70° C. for 480 h and bent with a radius of 1.5 cm.

12. The barrier film according to claim 5 , which, when dried at 70% relative humidity at 70°C for 480 h and bent with a radius of 1.5 cm, has a WVTR that is not more than 1000 times higher than a WVTR of the barrier film when dried at 70% relative humidity at 70° C. for 480 h and not bent.

13. A process for producing the laminate according to claim 1 , the process comprising, more than once, a sequence comprising:
(a) depositing an inorganic layer of a (semi)metal oxide, elemental (semi)metal or semi(metal) nitride by performing 4 to 150 cycles of an atomic layer deposition (ALD) process, and
(b) depositing an organic layer consisting of S and one or more elements selected from the group consisting of C, H, O, N, Se and P by a molecular layer deposition process,
wherein the ALD process comprises the decomposition of a (semi)metal compound to the (semi)metal oxide, elemental (semi)metal or (semi)metal nitride after the (semi)metal compound has been deposited.

14. The process according to claim 13 , wherein the molecular layer deposition process comprises depositing the organic layer with a thiol.

15. The process according to claim 13 , wherein the molecular layer deposition process comprises depositing the organic layer with a dithiol.

16. The process according to claim 13 , wherein the molecular layer deposition process comprises depositing the organic layer with an aromatic thiol.

17. The process according to claim 13 , wherein the atomic layer deposition process comprises depositing the inorganic layer with an Al-containing compound.

18. The process according to claim 13 , wherein the process comprises performing the sequence comprising (a) and (b) at least 30 times.

19. A laminate comprising, more than once, a sequence comprising:
(a) an inorganic layer of a (semi)metal oxide, elemental (semi)metal or (semi)metal nitride having a thickness of 0.4 to 3 nm and
(b) an organic layer consisting of S and one or more elements selected from the group consisting of C, H, O, N, Se and P obtained with an organic thiol comprising one or more hydroxyl groups.

20. The laminate according to claim 19 , wherein the laminate has a water vapor transmission rate (WVTR) of less than 10 −2 g/m 2 d when dried at 70% relative humidity at 70° C. for 480 h and bent with a radius of 1.5 cm.

Assignees

• Basf Coatings Gmbh

Inventors

• Ahlf Maraike
• Eickemeyer Felix
• Loeffler Daniel
• Klotz Stephan
• Frank Juergen
• Sung Myung Mo
• Yoon Kwan Hyuck

Classifications

• C23C16/45529 Primary

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• B05D1/60

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• C23C28/00

  Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D · CPC title